未登录

Y

Y. V. Gomeniuk

national academy of sciences ukraine

H指数:13

被引数:496

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Application of gate-to-channel capacitance measurements for extraction and investigation of the effective mobility in MoS2 field effect transistors with hysteresis of electrical characteristics

利用栅极-沟道电容测量提取和研究具有电学特性滞后效应的MoS2场效应晶体管中的有效迁移率

Physica Scripta

IF2.6

2026-03-130

PRE

Charge transport and charge trapping in polycrystalline ZnO thin films doped by methane: local and integrated analysis

甲烷掺杂的多晶ZnO薄膜中的电荷传输和电荷捕获：局部与综合分析

PHYSICA SCRIPTA

IF2.6

2025-01-100

PRE

Structural insight into nanoscale inhomogeneity of electrical properties in highly conductive polycrystalline ZnO thin films doped using methane

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-01-191

PRE

Plasma treatment as a versatile tool for tuning of sorption properties of thin nanoporous carbon films

APPLIED SURFACE SCIENCE

IF6.9

2021-04-0115

PREAI

Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering

甲烷作为新型掺杂前驱体用于磁控溅射沉积高导电ZnO薄膜

IF3.9

2020-04-0115

PREAI

Highly porous carbon films fabricated by magnetron plasma enhanced chemical vapor deposition: Structure, properties and implementation

APPLIED SURFACE SCIENCE

IF6.9

2019-12-017

PREAI

Charge Carrier Transport, Trapping, and Recombination in PEDOT:PSS/n-Si Solar Cells

ACS APPLIED ENERGY MATERIALS

IF5.5

2019-07-2913

PREAI

Hopping conduction and LF noise in structures with Ge nanoclusters grown on oxidized Si(001)

JOURNAL OF MATERIALS SCIENCE

IF3.9

2016-06-242

PREAI

Effect of vacuum annealing on charge transport and trapping in a-Si1-xCx:H/c-Si heterostructures

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2012-01-012

PREAI

Carrier transfer effect on transport in p-i-n structures with Ge quantum dots

PHYSICAL REVIEW B

IF3.7

2011-09-1913

PREAI

Low-temperature conductance measurements of surface states in HfO2-Si structures with different gate materials

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2006-12-0115

PREAI

Analysis of electrically active N-O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2006-02-0110

PREAI

Far-infrared absorption due to electronic transitions of N-O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration

APPLIED PHYSICS LETTERS

IF3.6

2005-10-0614

PREAI

Local mode frequencies of the NAs-InGa nearest-neighbor pair in (Ga,In)(As,N) alloys -: art. no. 161314

PHYSICAL REVIEW B

IF3.7

2004-10-2820

PREAI

Spectroscopic evidence for a N-Ga vacancy defect in GaAs

PHYSICAL REVIEW B

IF3.7

2004-03-237

PREAI

Method to determine carbon in silicon by infrared absorption spectroscopy

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2003-01-0111

PREAI

Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

1999-01-013

PREAI