未登录

Z

Zhikai Gan

Shanghai Institute of Technical Physics

H指数:13

被引数:493

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

High-Performance Long-Wavelength Infrared Avalanche Photodiode with Composition Gradient Layers

高性能长波红外雪崩光电二极管，具有组分梯度层

IF6.7

2025-10-240

PRE

Dark current suppression of very long-wavelength p-on-n HgCdTe infrared detectors via optimizing absorber layer carrier concentration

通过优化吸收层载流子浓度来抑制超长波长p-n-hgcdte红外探测器的暗电流

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2025-06-010

PRE

Study of Au doping processing for high quality extrinsic doped n on p HgCdTe detector

高质量外掺杂n型HgCdTe探测器的Au掺杂工艺研究

APPLIED PHYSICS LETTERS

IF3.6

2025-05-150

PRE

High-temperature mid-wavelength infrared avalanche photodiode with modified fully-depleted absorption and multiplication region

高温中波红外雪崩光电二极管，具有改进的完全耗尽吸收和倍增区

COMMUNICATIONS MATERIALS

IF9.6

2025-04-120

OA

Study of the n-region formation process in n-on-p HgCdTe devices

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2024-11-011

PRE

Graphene-enhanced lateral photovoltaic effect observed in the Ag nanoparticle-covered graphene/n-type silicon

IF3.3

2024-05-280

PRE

Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS2 for a Neuromorphic Vision System

IF9.1

2023-08-237

PRE

Comparative study on dark current mechanisms of n-on-p and p-on-n long-wavelength HgCdTe infrared detectors

N-on-p和p-on-n长波HgCdTe红外探测器暗电流机制的比较研究

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2022-06-0110

PRE

Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure

APPLIED PHYSICS LETTERS

IF3.6

2022-01-1321

PRE

Enhancement of light-induced resistance effect in the nanostructure of Ag/graphene based on the n-type silicon

APPLIED PHYSICS LETTERS

IF3.6

2021-08-123

PRE

Lateral Photovoltaic Effect in Silk-Protein-Based Nanocomposite Structure for Physically Transient Position-Sensitive Detectors

PHYSICAL REVIEW APPLIED

IF4.4

2021-05-0617

PREAI

High-performance resistive switching memory with embedded molybdenum disulfide quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2021-04-2629

PREAI

Laser tuned large position-dependent tunneling detection dominated by interface states in silicon based oxide-semiconductor structure

IF3.3

2019-01-095

OA

Configurable ultra-low operating voltage resistive switching between bipolar and threshold behaviors for Ag/TaOx/Pt structures

APPLIED PHYSICS LETTERS

IF3.6

2018-09-1232

PREAI

Using laser to trigger a large positive magnetoresistive effect in nonmagnetic Si-based metal-oxide-semiconductor structure

APPLIED PHYSICS LETTERS

IF3.6

2017-12-112

PREAI

Localized Surface Plasmon Induced Position-Sensitive Photodetection in Silicon-Nanowire-Modified Ag/Si

IF12.1

2017-09-2243

PREAI

Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions

SCIENTIFIC REPORTS

IF3.9

2017-04-1110

OAAI

Lateral photovoltaic effect in p-type silicon induced by surface states

APPLIED PHYSICS LETTERS

IF3.6

2017-03-2060

PREAI

Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures

SCIENTIFIC REPORTS

IF3.9

2016-08-189

OAAI

Using laser to modulate a linear resistance change in Cu2O/Si heteroepitaxial junction

APPLIED PHYSICS LETTERS

IF3.6

2016-07-2011

PREAI