J. Gyulai

hun-ren

30H指数

275论文数

3.7K被引数

收录论文 18

发表时间

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-12-01

OAAI

Lohner, Tivadar; Nemeth, Attila; Zolnai, Zsolt; Kalas, Benjamin; Romanenko, Alekszej; Nguyen Quoc Khanh; Szilagyi, Edit; Kotai, Endre; Agocs, Emil; Toth, Zsolt; Budai, Judit; Petrik, Peter; Fried, Miklos; Barsony, Istvan; Gyulai, Jozsef

Focused ion beam based sputtering yield measurements on ZnO and Mo thin films

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2007-07-01

PREAI

Horvath, E.; Nemeth, A.; Koos, A. A.; Bein, M. C.; Toth, A. L.; Horvath, Z. E.; Biro, L. P.; Gyulai, J.

Ellipsometric characterization of nanocrystals in porous silicon

APPLIED SURFACE SCIENCE

IF6.9

2006-10-01

PREAI

Petrik, P.; Fried, M.; Vazsonyi, E.; Lohner, T.; Horvath, E.; Polgar, O.; Basa, P.; Barsony, I.; Gyulai, J.

Atomically resolved STM images of carbon nanotube defects produced by Ar+ irradiation -: art. no. 045429

PHYSICAL REVIEW B

IF3.7

2005-07-14

PREAI

Osváth, Z; Vértesy, G; Tapasztó, L; Wéber, F; Horváth, ZE; Gyulai, J; Biró, LP

Investigation of the morphology and electrical characteristics of FeSi2 quantum dots on silicon

APPLIED SURFACE SCIENCE

IF6.9

2004-07-01

PREAI

Dózsa, L; Molnár, G; Horváth, ZJ; Tóth, AL; Gyulai, J; Raineri, V; Giannazzo, F

Characterization of near surface region of plasma immersion ion-implanted silicon using Rutherford backscattering spectrometry, transmission electron microscopy and spectroscopic ellipsometry

VACUUM

IF3.9

2003-05-01

PREAI

Shaaban, ER; Lohner, T; Pintér, I; Petrik, P; Khánh, NQ; Horváth, ZE; Gyulai, J

Characterisation of BaxSr1-xTiO3 films using spectroscopic ellipsometry, Rutherford backscattering spectrometry and X-ray diffraction

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2002-05-01

PREAI

Petrik, P; Khánh, NQ; Horváth, ZE; Zolnai, Z; Bársony, I; Lohner, T; Fried, M; Gyulai, J; Schmidt, C; Schneider, C; Ryssel, H

Non-destructive characterization of strontium bismuth tantalate films

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2002-04-01

PREAI

Petrik, P; Khánh, NQ; Horváth, ZE; Zolnai, Z; Bársony, I; Lohner, T; Fried, M; Gyulai, J; Schmidt, C; Schneider, C; Ryssel, H

SCTS:: scanning capacitance transient spectroscopy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2001-02-01

PREAI

Tóth, AL; Dózsa, L; Gyulai, J; Giannazzo, F; Raineri, V

Simulation of scanning tunneling spectroscopy of supported carbon nanotubes

PHYSICAL REVIEW B

IF3.7

2000-07-15

PREAI

Márk, GI; Biró, LP; Gyulai, J; Thiry, PA; Lucas, AA; Lambin, P

Selective nucleation and growth of carbon nanotubes at the CoSi2/Si interface

APPLIED PHYSICS LETTERS

IF3.6

2000-02-07

PREAI

Biró, LP; Molnár, G; Szabó, I; Vértesy, Z; Horváth, ZE; Gyulai, J; Kónya, Z; Piedigrosso, P; Fonseca, A; Nagy, JB; Thiry, PA

He-vacancy interactions in Si and their influence on bubble formation and evolution

PHYSICAL REVIEW B

IF3.7

2000-01-01

104

PREAI

Raineri, V; Coffa, S; Szilágyi, E; Gyulai, J; Rimini, E

Simulation of STM images of three-dimensional surfaces and comparison with experimental data: Carbon nanotubes

PHYSICAL REVIEW B

IF3.7

1998-11-15

PREAI

Mark, GI; Biro, LP; Gyulai, J

Ion implantation induced buried disorder studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry

VACUUM

IF3.9

1998-07-01

PREAI

Lohner, T; Petrik, P; Polgar, O; Khanh, NQ; Fried, M; Gyulai, J

Ion implantation-caused damage depth profiles in single-crystalline silicon studied by Spectroscopic Ellipsometry and Rutherford Backscattering Spectrometry

VACUUM

IF3.9

1998-07-01

PREAI

Petrik, P; Polgar, O; Lohner, T; Fried, M; Khanh, NQ; Gyulai, J

Scanning probe microscopy investigation of nanometer structures produced by irradiation with 200 MeV ions

VACUUM

IF3.9

1998-07-01

PREAI

Biro, LP; Gyulai, J; Havancsak, K

Modified C-t technique for determining the generation lifetime profile in MeV He+ implanted

VACUUM

IF3.9

1998-07-01

PREAI

Mohacsy, T; Khanh, NQ; Adam, M; Gyulai, J

Use of atomic-force microscopy and of a parallel irradiation geometry for in-depth characterization of damage produced by swift Kr ions in silicon

PHYSICAL REVIEW B

IF3.7

1996-11-01

PREAI

Biro, LP; Gyulai, J; Havancsak, K; Didyk, AY; Bogen, S; Frey, L

研究方向