未登录 Three-dimensional conformal arc radiotherapy using a C-arm linear accelerator with a computed tomography on-rail system for prostate cancer: clinical outcomes Kumabe, Atsuhiro; Fukuhara, Noboru; Utsunomiya, Takuji; Kawase, Takatsugu; Iwata, Kunihiro; Okada, Yukinori; Sutani, Shinya; Ohashi, Toshio; Oya, Mototsugu; Shigematsu, Naoyuki 分享 收藏
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Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; Jevasuwan, Wipakorn; Maeda, Tatsuro; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi 分享 收藏
Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi 分享 收藏
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density Suzuki, R.; Taoka, N.; Yokoyama, M.; Lee, S.; Kim, S. H.; Hoshii, T.; Yasuda, T.; Jevasuwan, W.; Maeda, T.; Ichikawa, O.; Fukuhara, N.; Hata, M.; Takenaka, M.; Takagi, S. 分享 收藏
In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi 分享 收藏
Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; Miyata, Noriyuki; Yasuda, Tetsuji; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi 分享 收藏
Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors Urabe, Yuji; Yokoyama, Masafumi; Takagi, Hideki; Yasuda, Tetsuji; Miyata, Noriyuki; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi 分享 收藏
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface Yokoyama, Masafumi; Yasuda, Tetsuji; Takagi, Hideki; Miyata, Noriyuki; Urabe, Yuji; Ishii, Hiroyuki; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Sugiyama, Masakazu; Nakano, Yoshiaki; Takenaka, Mitsuru; Takagi, Shinichi 分享 收藏
Radiation Therapy in Patients with Implanted Cardiac Pacemakers and Implantable Cardio-defibrillators: A Prospective Survey in Japan Soejima, T.; Yoden, E.; Nishimura, Y.; Ono, S.; Yoshida, A.; Fukuda, H.; Fukuhara, N.; Sasaki, R.; Tsujino, K.; Norihisa, Y. 分享 收藏
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