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Bhim Chamlagain

wayne state university

H指数:15

被引数:2,373

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Rapid Degradation of the Electrical Properties of 2D MoS2 Thin Films under Long-Term Ambient Exposure

IF4.3

2021-09-0912

OAAI

Scalable lateral heterojunction by chemical doping of 2D TMD thin films

SCIENTIFIC REPORTS

IF3.9

2020-07-3135

OAAI

Low pressure sulfurization and characterization of multilayer MoS2 for potential applications in supercapacitors

IF9.4

2020-07-0121

PREAI

Electrical properties tunability of large area MoS2 thin films by oxygen plasma treatment

APPLIED PHYSICS LETTERS

IF3.6

2020-06-0315

OAAI

Tailoring the Potential Landscape and Electrical Properties of 2D MoS2 using Gold Nanostructures of Different Coverage Density

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2020-02-274

PREAI

Gate-Tunable Photoresponse Time in Black Phosphorus-MoS2 Heterojunctions

ADVANCED OPTICAL MATERIALS

IF7.2

2018-12-2825

OAAI

Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal-Insulator Electronics

超薄且原子平坦的过渡金属氧化物: 金属绝缘体电子器件的有希望的构建块

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-12-0724

PREAI

Visualizing Light Scattering in Silicon Waveguides with Black Phosphorus Photodetectors

ADVANCED MATERIALS

IF26.8

2016-06-1431

PREAI

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

低电阻2D/2D欧姆接触: 高性能WSe2，MoS2和MoSe2晶体管的通用方法

IF9.1

2016-02-10391

OAAI

Plasmonic Hot Electron Induced Photocurrent Response at MoS2-Metal Junctions

IF16

2015-04-20103

PREAI

Anisotropic photocurrent response at black phosphorus-MoS2 p-n heterojunctions

IF5.1

2015-01-01142

PREAI

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate (vol 8, pg 5079, 2014)

IF16

2014-07-183

PREAI

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

高迁移率WSe2 p型和n型场效应晶体管通过高掺杂石墨烯接触，用于低电阻接触

IF9.1

2014-05-22482

OAAI

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

聚对二甲苯-C衬底上MoSe2场效应晶体管的迁移率改善和温度依赖性

IF16

2014-04-16200

OAAI

Polarized photocurrent response in black phosphorus field-effect transistors

IF5.1

2014-01-01344

PREAI

Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

具有离子液体门控的少层MoS2场效应晶体管中载流子迁移率的提高

IF16

2013-04-23349

OA