Marius Grundmann - Publications, H-index & Citations

Marius Grundmann

universität leipzig

86H指数

999论文数

3.7W被引数

收录论文 269

发表时间

Ambient-Stable Transparent P-Type CuI Transistors Via Room-Temperature Pulsed Laser Deposition 室温脉冲激光沉积法制备的空气稳定性透明p型CuI晶体管

Advanced Functional Materials

IF19

2026-07-27

OAAI

Yang Chen; Susanne Selle; Michael S. Bar; Michael Lorenz; Holger von Wenckstern; Marius Grundmann

Analytical Solution to the Gradual Channel Approximation for Metal-Oxide-Semiconductor Field-Effect Transistors 金属-氧化物-半导体场效应晶体管渐变沟道近似的解析解

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

IF1.8

2025-11-01

OAAI

Grundmann, Marius

Special Issue of the International Conference Transparent Conductive Oxides - Fundamentals and Applications 透明导电氧化物国际会议特刊-基础和应用

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS

IF2

2025-11-01

PREAI

von Wenckstern, Holger; Grundmann, Marius

High-Throughput Combinatorial Synthesis of Rhombohedral α-(CrxGa1-x)2O3 Solid Solutions over the Entire Composition Range 整个组成范围内菱面体α-(CrxGa1-x)2O3固溶体的高通量组合合成

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS

IF2

2025-09-01

OAAI

Petersen, Clemens; Sayenko, Dmitry; Seifert, Jakob; Vogt, Sofie; Sturm, Chris; Grundmann, Marius; von Wenckstern, Holger

Ultrawide bandgap spinel γ-(Ga0.8Ge0.2)2O3 alloy semiconductor epitaxial thin films 超宽禁带尖晶石 γ-(Ga0.8Ge0.2)2O3 合金半导体外延薄膜

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-05-02

OAAI

Yu, Jingjing; Luo, Sijun; Splith, Daniel; Selle, Susanne; Thieme, Katrin; Gierth, Stephan; Schultz, Thorsten; Schlupp, Peter; Sturm, Chris; von Wenckstern, Holger; Lorenz, Michael; Koch, Norbert; Hoeche, Thomas; Grundmann, Marius

Role of sample thickness and self-absorption effects in simultaneous XEOL-XAS measurements on single crystalline ZnO and GaN

PHYSICAL REVIEW RESEARCH

IF4.2

2025-04-18

OAAI

Levcenko, Sergiu; Ritter, Konrad; Falk, Hans H.; Pfeiffelmann, Timo; Trefflich, Lukas; Welter, Edmund; Grundmann, Marius; Schnohr, Claudia S.

Low-temperature buffer layer-assisted heteroepitaxial growth of γ-CuI thin films by pulsed laser deposition: Tailoring electrical properties

APPLIED PHYSICS LETTERS

IF3.6

2025-01-28

OAAI

Chen, Yang; Bar, Michael S.; Selle, Susanne; Splith, Daniel; Lorenz, Michael; Grundmann, Marius; von Wenckstern, Holger

Lateral α-Ga2O3:Zr metal-semiconductor field effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2024-12-19

PREAI

Vogt, Sofie; Splith, Daniel; Koepp, Sebastian; Schlupp, Peter; Petersen, Clemens; von Wenckstern, Holger; Grundmann, Marius

Long-range propagation of Bloch surface wave polaritons in ZnO

APPLIED PHYSICS LETTERS

IF3.6

2024-11-18

PREAI

Henn, S.; Mueller, A.; Grundmann, M.; Sturm, C.

Deconvolution of light- and heavy-hole contributions to measurements of the temperature-dependent Hall effect in zincblende copper iodide

PHYSICAL REVIEW APPLIED

IF4.4

2024-10-10

OAAI

Bar, Michael S.; Splith, Daniel; Chen, Yang; Grundmann, Marius; von Wenckstern, Holger; Rauch, Tomas; Blaurock, Steffen; Krautscheid, Harald

Zr doping in pulsed-laser-deposited α-Ga 2 O 3 for device applications

PHYSICAL REVIEW APPLIED

IF4.4

2024-06-07

PREAI

Vogt, S.; Petersen, C.; von Wenckstern, H.; Grundmann, M.; Schultz, T.; Koch, N.

RETRACTION: Nature of optical transitions in self-organized InAs/GaAs quantum dots [Phys. Rev. B 53, 10509(R) (1996)] (Retraction of Vol 53, art no 10509, 1996)

PHYSICAL REVIEW B

IF3.7

2023-11-21

OAAI

Grundmann, M.; Ledentsov, N. N.; Stier, O.; Boehrer, J.; Bimberg, D.; Ustinov, V. M.; Kop'ev, P. S.; Alferov, Zh. I.

Cation segregation observed in an (In,Ga)2O3 material thin film library beyond the miscibility limit of the bixbyite structure

PHYSICAL REVIEW MATERIALS

IF3.4

2023-09-26

OAAI

Montag, S.; Splith, D.; Kneiss, M.; Grundmann, M.; Fernandez, J. Garcia; Prytz, O.; von Wenckstern, H.

Two- and three-photon absorption in bulk CuI

APPLIED PHYSICS LETTERS

IF3.6

2023-09-19

OAAI

Mueller, Andreas; Henn, Sebastian; Krueger, Evgeny; Blaurock, Steffen; Krautscheid, Harald; Grundmann, Marius; Sturm, Chris

RETRACTION: Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates

APPLIED PHYSICS LETTERS

IF3.6

2023-06-22

OAAI

Grundmann, M.; Christen, J.; Bimberg, D.; Hashimoto, A.; Fukunaga, T.; Watanabe, N.

PLD of α-Ga2O3 on m-plane Al2O3: Growth regime, growth process, and structural properties

APL MATERIALS

IF4.5

2023-06-12

OAAI

Petersen, Clemens; Vogt, Sofie; Kneiss, Max; von Wenckstern, Holger; Grundmann, Marius

Growth of κ-([Al,In] x Ga1-x)2O3 Quantum Wells and Their Potential for Quantum-Well Infrared Photodetectors

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-06-06

OAAI

Schultz, Thorsten; Kneiss, Max; Storm, Philipp; Splith, Daniel; von Wenckstern, Holger; Koch, Christoph T.; Hammud, Adnan; Grundmann, Marius; Koch, Norbert

(111)-Oriented Growth and Acceptor Doping of Transparent Conductive CuI:S Thin Films by Spin Coating and Radio Frequency-Sputtering

ADVANCED ENGINEERING MATERIALS

IF3.3

2023-02-07

PREAI

Geng, Fangjuan; Wang, Liangjun; Stralka, Tillmann; Splith, Daniel; Ruan, Siyuan; Yang, Jialin; Yang, Lei; Gao, Gang; Xu, Liangge; Lorenz, Michael; Grundmann, Marius; Zhu, Jiaqi; Yang, Chang

Ultrawide bandgap willemite-type Zn2GeO4 epitaxial thin films

APPLIED PHYSICS LETTERS

IF3.6

2023-01-17

PREAI

Luo, Sijun; Trefflich, Lukas; Selle, Susanne; Hildebrandt, Ron; Krueger, Evgeny; Lange, Stefan; Yu, Jingjing; Sturm, Chris; Lorenz, Michael; Von Wenckstern, Holger; Hagendorf, Christian; Hoeche, Thomas; Grundmann, Marius

Dielectric function of CuBrxI1-x alloy thin films CuBrxI1-x合金薄膜的介电性能

PHYSICAL REVIEW MATERIALS

IF3.4

2022-12-07

PREAI

Seifert, Michael; Krueger, Evgeny; Bar, Michael S.; Merker, Stefan; von Wenckstern, Holger; Krautscheid, Harald; Grundmann, Marius; Sturm, Chris; Botti, Silvana

研究方向