S. Fafard - Publications, H-index & Citations

S. Fafard

institut national des sciences appliquees de lyon - insa lyon

48H指数

246论文数

9.7K被引数

收录论文 53

发表时间

Multijunction solar cell mesa isolation: Correlation between process, morphology and cell performance

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2022-06-01

OAAI

de Lafontaine, Mathieu; Ayari, Farah; Pargon, Erwine; Gay, Guillaume; Petit-Etienne, Camille; Turala, Artur; Hamon, Gwenaelle; Jaouad, Abdelatif; Volatier, Maite; Fafard, Simon; Aimez, Vincent; Darnon, Maxime

In-Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy

SMALL

IF12.1

2021-11-10

OAAI

Diallo, Thierno Mamoudou; Aziziyan, Mohammad Reza; Arvinte, Roxana; Harmand, Jean-Christophe; Patriarche, Gilles; Renard, Charles; Fafard, Simon; Ares, Richard; Boucherif, Abderraouf

Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2020-11-01

PREAI

Mbeunmi, A. B. Poungoue; El-Gahouchi, M.; Arvinte, R.; Jaouad, A.; Cheriton, R.; Wilkins, M.; Valdivia, C. E.; Hinzer, K.; Fafard, S.; Aimez, V; Ares, R.; Boucherif, A.

Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2019-06-01

OAAI

Chancerel, F.; Regreny, P.; Leclercq, J. L.; Brottet, S.; Volatier, M.; Jaouad, A.; Darnon, M.; Fafard, S.; Blanchar, N. P.; Gendry, M.; Aimez, V.

Influence of plasma process on III-V/Ge multijunction solar cell via etching

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2019-06-01

OAAI

de Lafontaine, Mathieu; Pargon, Erwine; Petit-Etienne, Camille; Gay, Guillaume; Jaouad, Abdelatif; Gour, Marie-Josee; Volatier, Maite; Fafard, Simon; Aimez, Vincent; Darnon, Maxime

Simulation of through-cell vias contacts under non-uniform concentrated light profiles

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2018-12-01

PREAI

Richard, Olivier; Aimez, Vincent; Ares, Richard; Fafard, Simon; Jaouad, Abdelatif

Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching

ELECTROCHIMICA ACTA

IF5.6

2017-04-01

PREAI

Bioud, Youcef A.; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Etienne; Fafard, Simon; Aimez, Vincent; Drouin, Dominique; Ares, Richard

High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%

APPLIED PHYSICS LETTERS

IF3.6

2016-09-29

OAAI

Fafard, S.; Proulx, F.; York, M. C. A.; Richard, L. S.; Provost, P. O.; Ares, R.; Aimez, V.; Masson, D. P.

Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

APPLIED PHYSICS LETTERS

IF3.6

2016-02-16

OAAI

Fafard, S.; York, M. C. A.; Proulx, F.; Valdivia, C. E.; Wilkins, M. M.; Ares, R.; Aimez, V.; Hinzer, K.; Masson, D. P.

Simulation of a through cell via contacts architecture for HCPV multi-junction solar cells

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2016-01-01

PREAI

Richard, Olivier; Jaouad, Abdelatif; Bouzazi, Boussairi; Ares, Richard; Fafard, Simon; Aimez, Vincent

Pushing the limits of concentrated photovoltaic solar cell tunnel junctions in novel high-efficiency GaAs phototransducers based on a vertical epitaxial heterostructure architecture

PROGRESS IN PHOTOVOLTAICS

IF7.6

2015-10-29

OAAI

Masson, Denis; Proulx, Francine; Fafard, Simon

Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells

PROGRESS IN PHOTOVOLTAICS

IF7.6

2010-11-18

PREAI

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alexandre W.; Kolhatkar, Gitanjali; Jaouad, Abdelatif; Turala, Artur; Riel, Bruno; Masson, Denis; Puetz, Norbert; Fafard, Simon; Ares, Richard; Aimez, Vincent; Hall, Trevor J.; Hinzer, Karin

Single-exciton energy shell structure in InAs/GaAs quantum dots InAs/GaAs量子点中的单激子能量壳层结构

PHYSICAL REVIEW B

IF3.7

2008-12-22

OAAI

Awirothananon, S.; Raymond, S.; Studenikin, S.; Vachon, M.; Render, W.; Sachrajda, A.; Wu, X.; Babinski, A.; Potemski, M.; Fafard, S.; Cheng, S. J.; Korkusinski, M.; Hawrylak, P.

Ground-state emission from a single InAs/GaAs self-assembled quantum dot structure in ultrahigh magnetic fields

PHYSICAL REVIEW B

IF3.7

2006-08-07

OAAI

Babinski, A.; Ortner, G.; Raymond, S.; Potemski, M.; Bayer, M.; Sheng, W.; Hawrylak, P.; Wasilewski, Z.; Fafard, S.; Forchel, A.

External-cavity quantum-dot laser tunable through 1.55 μm

APPLIED PHYSICS LETTERS

IF3.6

2006-03-16

PREAI

Allen, CN; Ortner, G; Dion, C; Poole, PJ; Barrios, P; Lapointe, J; Pakulski, G; Render, W; Fafard, S; Raymond, S