未登录

K

Kunook Chung

ulsan national institute of science and technology

H指数:18

被引数:1,633

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Epitaxial n-ZnO/MoS2/p-GaN Heterostructure Light-Emitting Diodes

外延n-ZnO/MoS2/p-GaN异质结发光二极管

IF9.1

2026-04-210

OA

In-situ fabrication of GaN/short-range ordered BN heterostructure light-emitting diodes

原位制备GaN/短程有序BN异质结构发光二极管

NPG Asia Materials

IF8.3

2025-03-280

OAAI

Simple Functionalization of a Donor Monomer to Enhance Charge Transfer in Porous Polymer Networks for Photocatalytic Hydrogen Evolution

给体单体的简单官能化以增强多孔聚合物网络中的电荷转移以进行光催化析氢

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

IF16.9

2024-02-287

PRE

Methods and optoelectronic device applications of semiconductor epitaxy assisted by two-dimensional van der Waals materials

JOURNAL OF INFORMATION DISPLAY

IF3.4

2024-02-193

OA

van der Waals integration of GaN light-emitting diode arrays on foreign graphene films using semiconductor/graphene heterostructures

使用半导体/石墨烯异质结构在国外石墨烯薄膜上的GaN发光二极管阵列的范德华集成

NPG ASIA MATERIALS

IF8.3

2022-07-0811

OA

Ultrathin Tactile Sensors with Directional Sensitivity and a High Spatial Resolution

IF9.1

2021-10-0112

PREAI

High sensitivity bolometers based on metal nanoantenna dimers with a nanogap filled with vanadium dioxide

SCIENTIFIC REPORTS

IF3.9

2021-08-059

OAAI

Intracellular gallium nitride microrod laser

NPG ASIA MATERIALS

IF8.3

2021-04-025

OAAI

On-chip optical spectrometer based on GaN wavelength-selective nanostructural absorbers

APPLIED PHYSICS LETTERS

IF3.6

2020-02-2620

PREAI

Wavelength tuning in the purple wavelengths using strain-controlled AlxGa1-xN/GaN disk-in-wire structures

APPLIED PHYSICS LETTERS

IF3.6

2020-01-286

PREAI

Feasibility study of nanopillar LED array for color-tunable lighting and beyond

IF3.3

2019-12-164

OA

Free-standing and ultrathin inorganic light-emitting diode array

NPG ASIA MATERIALS

IF8.3

2019-07-1915

OAAI

A tensorial shear stress sensor based on light-emitting GaN nanopillars

APPLIED PHYSICS LETTERS

IF3.6

2019-07-105

OAAI

GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer

IF17.1

2019-06-0114

PREAI

Understanding luminescence properties of grain boundaries in GaN thin films and their atomistic origin

APPLIED PHYSICS LETTERS

IF3.6

2018-03-265

PREAI

Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets

NPG ASIA MATERIALS

IF8.3

2017-07-2833

OAAI

Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering

APPLIED PHYSICS LETTERS

IF3.6

2017-07-2441

PREAI

Monolithic integration of individually addressable light-emitting diode color pixels

APPLIED PHYSICS LETTERS

IF3.6

2017-03-1358

PREAI

Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

ADVANCED MATERIALS

IF26.8

2016-06-2778

PREAI

Real-time device-scale imaging of conducting filament dynamics in resistive switching materials

SCIENTIFIC REPORTS

IF3.9

2016-06-0712

OAAI