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Gangyuan Jia

taiyuan university of science & technology

H指数:4

被引数:68

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In-situ ion luminescence characterization of defects produced in diamond by 6 MeV carbon ion irradiation

6 MeV碳离子辐照金刚石缺陷的原位离子发光表征

IF3.9

2025-03-010

PRE

Study of photoluminescence from defects in electron-irradiated beta-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2024-09-261

PRE

The near surface damage and recovery of low nitrogen diamond implanted with MeV phosphorus ions

MeV磷离子注入低氮金刚石的近表面损伤与恢复

APPLIED SURFACE SCIENCE

IF6.9

2024-07-012

PRE

The luminescence study of GeV centers and damage in diamond induced by 300keV Ge ion implantation

IF3.9

2024-04-012

PRE

Photoluminescence studies of optical centers generated by the B ion irradiation in Ib diamond

Ib金刚石中B离子辐照产生的光学中心的光致发光研究

JOURNAL OF LUMINESCENCE

IF3.6

2022-03-013

PRE

Temperature dependence of optical centers in 200 keV electron irradiated β-Ga2O3

MATERIALS TODAY COMMUNICATIONS

IF4.5

2021-12-013

PREAI

Photoluminescence spectra of intrinsic interstitials in IIa diamond after near threshold energy irradiation

近阈值能量辐照后IIa金刚石中本征间隙的光致发光光谱

IF3.9

2021-05-011

PREAI

Photoluminescence study on the optical properties of silicon-vacancy centre in diamond

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2021-04-0110

OAAI

Adjustable charge states of nitrogen-vacancy centers in low-nitrogen diamond after electron irradiation and subsequent annealing

APPLIED PHYSICS LETTERS

IF3.6

2020-10-2725

PREAI