L. Worschech - Publications, H-index & Citations

L. Worschech

University of Wurzburg

39H指数

224论文数

5.4K被引数

收录论文 88

发表时间

Single-Photon Counting with Semiconductor Resonant Tunneling Devices 半导体共振隧穿器件的单光子计数

NANOMATERIALS

IF4.3

2022-07-09

OAAI

Pfenning, Andreas; Krueger, Sebastian; Jabeen, Fauzia; Worschech, Lukas; Hartmann, Fabian; Hoefling, Sven

Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature 共振隧穿二极管: 室温下的中红外传感

NANOMATERIALS

IF4.3

2022-03-21

OAAI

Rothmayr, Florian; Guarin Castro, Edgar David; Hartmann, Fabian; Knebl, Georg; Schade, Anne; Hoefling, Sven; Koeth, Johannes; Pfenning, Andreas; Worschech, Lukas; Lopez-Richard, Victor

Determination of Carrier Density and Dynamics via Magnetoelectroluminescence Spectroscopy in Resonant-Tunneling Diodes

PHYSICAL REVIEW APPLIED

IF4.4

2021-01-22

OAAI

Cardozo de Oliveira, E. R.; Naranjo, A.; Pfenning, A.; Lopez-Richard, V; Marques, G. E.; Worschech, L.; Hartmann, F.; Hofling, S.; Teodoro, M. D.

p-Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid-Infrared Spectral Region

ADVANCED OPTICAL MATERIALS

IF7.2

2018-10-23

OAAI

Pfenning, Andreas; Hartmann, Fabian; Weih, Robert; Emmerling, Monika; Worschech, Lukas; Hoefling, Sven

Electroluminescence on-off ratio control of n-i-n GaAs/AlGaAs-based resonant tunneling structures

PHYSICAL REVIEW B

IF3.7

2018-08-01

OAAI

Cardozo de Oliveira, E. R.; Pfenning, A.; Guarin Castro, E. D.; Teodoro, M. D.; dos Santos, E. C.; Lopez-Richard, V.; Marques, G. E.; Worschech, L.; Hartmann, F.; Hoefling, S.

Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells

PHYSICAL REVIEW B

IF3.7

2018-07-16

OAAI

Kneb, G.; Pfeffer, P.; Schmid, S.; Kamp, M.; Bastard, G.; Batke, E.; Worschech, L.; Hartmann, F.; Hoefling, S.

Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

APPLIED PHYSICS LETTERS

IF3.6

2018-04-20

OAAI

Rothmayr, F.; Pfenning, A.; Kistner, C.; Koeth, J.; Knebl, G.; Schade, A.; Krueger, S.; Worschech, L.; Hartmann, F.; Hoefling, S.

GaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewells

APPLIED PHYSICS LETTERS

IF3.6

2017-10-26

OAAI

Pfenning, Andreas; Knebl, Georg; Hartmann, Fabian; Weih, Robert; Meyer, Manuel; Bader, Andreas; Emmerling, Monika; Worschech, Lukas; Hoefling, Sven

Electrical and optical switching in the bistable regime of an electrically injected polariton laser

PHYSICAL REVIEW B

IF3.7

2017-07-10

OAAI

Klaas, M.; Sigurdsson, H.; Liew, T. C. H.; Klembt, S.; Amthor, M.; Hartmann, F.; Worschech, L.; Schneider, C.; Hoefling, S.

Optical probing of the Coulomb interactions of an electrically pumped polariton condensate

APPLIED PHYSICS LETTERS

IF3.6

2017-04-10

OAAI

Klaas, M.; Mandal, S.; Liew, T. C. H.; Amthor, M.; Klembt, S.; Worschech, L.; Schneider, C.; Hoefling, S.

Nanoscale Tipping Bucket Effect in a Quantum Dot Transistor-Based Counter

NANO LETTERS

IF9.1

2017-03-20

OAAI

Hartmann, F.; Maier, P.; Rebello Sousa Dias, M.; Goepfert, S.; Castelano, L. K.; Emmerling, M.; Schneider, C.; Hoefling, S.; Kamp, M.; Pershin, Y. V.; Marques, G. E.; Lopez-Richard, V.; Worschech, L.

Associative learning with Y-shaped floating gate transistors operated in memristive modes

APPLIED PHYSICS LETTERS

IF3.6

2017-02-03

OAAI

Maier, P.; Hartmann, F.; Emmerling, M.; Schneider, C.; Kamp, M.; Worschech, L.; Hoefling, S.

Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

APPLIED PHYSICS LETTERS

IF3.6

2017-01-20

OAAI

Pfenning, Andreas; Knebl, Georg; Hartmann, Fabian; Weih, Robert; Bader, Andreas; Emmerling, Monika; Kamp, Martin; Hoefling, Sven; Worschech, Lukas

Light sensitive memristor with bi-directional and wavelength-dependent conductance control

APPLIED PHYSICS LETTERS

IF3.6

2016-07-11

OAAI

Maier, P.; Hartmann, F.; Dias, M. Rebello Sousa; Emmerling, M.; Schneider, C.; Castelano, L. K.; Kamp, M.; Marques, G. E.; Lopez-Richard, V.; Worschech, L.; Hoefling, S.

Electro-Photo-Sensitive Memristor for Neuromorphic and Arithmetic Computing

PHYSICAL REVIEW APPLIED

IF4.4

2016-05-17

OAAI

Maier, P.; Hartmann, F.; Emmerling, M.; Schneider, C.; Kamp, M.; Hoefling, S.; Worschech, L.

Experimental and theoretical analysis of Landauer erasure in nano-magnetic switches of different sizes

NANO ENERGY

IF17.1

2016-01-01

OAAI

Martini, L.; Pancaidi, M.; Madami, M.; Vavassori, P.; Gubbiotti, G.; Tacchi, S.; Hartmann, F.; Emmerling, M.; Hoefling, S.; Worschech, L.; Carlotti, G.

Photocurrent-voltage relation of resonant tunneling diode photodetectors

APPLIED PHYSICS LETTERS

IF3.6

2015-08-24

OAAI

Pfenning, Andreas; Hartmann, Fabian; Dias, Mariama Rebello Sousa; Langer, Fabian; Kamp, Martin; Castelano, Leonardo Kleber; Lopez-Richard, Victor; Marques, Gilmar Eugenio; Hoefling, Sven; Worschech, Lukas

Logical Stochastic Resonance with a Coulomb-Coupled Quantum-Dot Rectifier

PHYSICAL REVIEW APPLIED

IF4.4

2015-07-21

OAAI

Pfeffer, P.; Hartmann, F.; Hoefling, S.; Kamp, M.; Worschech, L.

Nanothermometer Based on Resonant Tunneling Diodes: From Cryogenic to Room Temperatures 基于共振隧穿二极管的纳米温度计: 从低温到室温

ACS NANO

IF16

2015-06-08

OAAI

Pfenning, Andreas; Hartmann, Fabian; Sousa Dias, Mariama Rebello; Castelano, Leonardo Kleber; Suessmeier, Christoph; Langer, Fabian; Hoefling, Sven; Kamp, Martin; Marques, Gilmer Eugenio; Worschech, Lukas; Lopez-Richard, Victor

Memristive operation mode of a site-controlled quantum dot floating gate transistor

APPLIED PHYSICS LETTERS

IF3.6

2015-05-18

OAAI

Maier, P.; Hartmann, F.; Mauder, T.; Emmerling, M.; Schneider, C.; Kamp, M.; Hoefling, S.; Worschech, L.

研究方向