Fobao Huang

northwestern polytechnical university

H指数:14

被引数:485

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Electrically Tunable Piezotronic Transistor by Coupling Interface Polar Symmetry and Strain Gradient

通过耦合界面极性对称性和应变梯度实现电学可调的压电电子晶体管

Advanced Science

IF14.1

2026-07-030

OAAI

Polarization-Dimension Competition in Centrosymmetric Flexoelectronic Transistors

极化-维度竞争在中心对称弯曲电致伸缩晶体管中

Materials Today Physics

IF9.7

2026-05-050

PRE

High-Sensitivity and Fast-Response Piezotronic Pressure Sensors by Mechanical Stacking in Silicon Wafer

高灵敏度和快速响应的压电式压力传感器：通过硅片机械堆叠制备

ACS Nano

IF16

2026-02-160

PRE

High-Performance (PEA)2PbI4/SnS2 van der Waals Heterostructure Phototransistor with Gate-Tunable Breaking of the Responsivity–Speed Trade-Off

高性能 (PEA)2PbI4/SnS2范德华异质结构光电晶体管，具有响应度-速度权衡的栅极可调打破

ACS Nano

IF16

2026-01-290

PRE

Two-Dimensional MoS2/SnS2 Isotype van der Waals Heterojunction Photodetectors with Thickness-Dependent Gate-Tunable Rectification Reversal

ACS PHOTONICS

IF6.7

2025-11-010

PRE

High-Performance Photomultiplication-Type Organic Photodetectors Based on Single-Donor Dual-Acceptor Ternary Bulk Heterojunctions

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2025-11-010

PRE

Tunable Sensitivity of Strain Sensor by Coupling Piezotronic and Tunneling Effects

通过耦合压电电子和隧穿效应的应变传感器可调灵敏度

Nano Energy

IF17.1

2025-09-040

PRE

Piezotronic Effect Driven by Symmetry Breaking in Centrosymmetric Semiconductors

由中心对称半导体中对称性破缺驱动的压电电子效应

Nano Energy

IF17.1

2025-08-200

PRE

Engineering of topological tunneling transistors via quantum point contact

PHYSICAL REVIEW APPLIED

IF4.4

2025-03-250

PRE

Lead-Based Perovskites Significantly Suppress Dark Currents toward High-Performance Multilayer SnS2/Perovskite Photodetectors

铅基钙钛矿显著抑制暗电流，以实现高性能多层SnS2/钙钛矿光电探测器

ACS NANO

IF16

2025-03-150

PRE

Insight into the Effect of h-BN Modification on the Performance of MoS2 Phototransistors with van der Waals Contacts

关于h-BN改性对具有范德华接触的MoS2光晶体管性能影响的研究

ACS APPLIED NANO MATERIALS

IF0

2025-03-131

PRE

Optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic device

SCIENTIFIC REPORTS

IF3.9

2025-02-070

OAAI

Organic-Inorganic Hybrid Perovskite Photosensitive Field-Effect Transistor Enabled by Poly(3-Hexylthiophene-2,5-Diyl) Channel Layer

通过聚 (3-己基噻吩-2，5-二基) 沟道层实现的有机-无机杂化钙钛矿光敏场效应晶体管

ADVANCED OPTICAL MATERIALS

IF7.2

2024-11-060

PRE

A switchable high-sensitivity strain sensor based on piezotronic resonant tunneling junctions

NANO RESEARCH

IF9

2024-09-050

PRE

Performance Improvement of Formamidinium-Based Perovskite Photodetector by Solution-Processed C8-BTBT Modification

通过溶液处理的C8-BTBT修饰改善基于甲脒的钙钛矿光电探测器的性能

ADVANCED OPTICAL MATERIALS

IF7.2

2024-05-036

PRE

Theoretical Insights into the Hole Mobility Anisotropy of Heteroarenes and Their Derivatives

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2024-04-231

PRE

Anthracene-[1]benzothieno[3,2-b][1]benzothiophene (BTBT) dyad and triads as p-type semiconductors for organic field-effect transistors and phototransistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2024-01-015

PRE

Layer engineering piezotronic effect in two-dimensional homojunction transistors

二维同质结晶体管中的层工程压电效应

NANO ENERGY

IF17.1

2023-12-013

PRE

Facile Vertical Structure Broadband Photodetectors Enabled by Poly(vinylpyrrolidone)-Regulated Perovskite and Near-Infrared-Sensitive Lead Phthalocyanine

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-08-215

PRE

Ultrasensitive Strain Sensor Based on a Tunnel Junction with an AlN/GaN Core-Shell Nanowire

PHYSICAL REVIEW APPLIED

IF4.4

2023-01-253

PRE

Fobao Huang

个人简介

教育背景

工作经历

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