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A

Arindam Basu

indian institute of technology system (iit system)

14H指数
90论文数
550被引数
收录论文 8
发表时间
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Evaluation of ring test with reference to deformation rate and specimen geometry in assessing the tensile behaviors of granite
errINTERNATIONAL JOURNAL OF ROCK MECHANICS AND MINING SCIENCES
IF7.5
err2025-01-01
err0
PREAI
errSarkar, Manali; Basu, Arindam
err分享
err收藏
Influence of parent lithology on field appearances and engineering properties of indurated laterites under same geographical conditions
errENGINEERING GEOLOGY
IF8.4
err2021-12-01
err6
PREAI
errSinha, Sayan; Basu, Arindam
err分享
err收藏
Evaluation of mechanical strength and physical properties of indurated laterite with regard to in situ characterization of lateritic profile
errBULLETIN OF ENGINEERING GEOLOGY AND THE ENVIRONMENT
IF4.2
err2021-03-23
err7
PREAI
errBasu, Arindam; Sinha, Sayan
err分享
err收藏
Deterioration of shear strength parameters of limestone joints under simulated acid rain condition
errINTERNATIONAL JOURNAL OF ROCK MECHANICS AND MINING SCIENCES
IF7.5
err2020-11-01
err16
PREAI
errBasu, Arindam; Ram, Bikash Kumar; Nanda, Nirmal Kumar; Nayak, Sushil Subhadeep
err分享
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Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions
errMATERIALS RESEARCH BULLETIN
IF5.7
err2016-12-01
err7
PREAI
errUpadhyay, S.; Mandal, A.; Agarwal, A.; Ghadi, H.; Kumari, K. C. Goma; Basu, A.; Subrahmanyam, N. B. V.; Singh, P.; Chakrabarti, S.
err分享
err收藏
Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer高能质子注入对覆盖层变化的In(Ga)as/GaAs QD异质结构的光学和电学性质的影响
errJOURNAL OF LUMINESCENCE
IF3.6
err2015-05-01
err4
PREAI
errUpadhyay, S.; Mandal, A.; Ghadi, H.; Pal, D.; Basu, A.; Agarwal, A.; Subrahmanyam, N. B. V.; Singh, P.; Chakrabarti, S.
err分享
err收藏
Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors
errMATERIALS RESEARCH BULLETIN
IF5.7
err2013-08-01
err3
PREAI
errMandal, A.; Ghadi, H.; Mathur, K. L.; Basu, A.; Subrahmanyam, N. B. V.; Singh, P.; Chakrabarti, S.
err分享
err收藏
More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H-)
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-02-06
err15
PREAI
errMandal, A.; Agarwal, A.; Ghadi, H.; Kumari, Goma K. C.; Basu, A.; Subrahmanyam, N. B. V.; Singh, P.; Chakrabarti, S.
err分享
err收藏

研究方向

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合作学者
合作期刊
A
Ajay Mandal
H 指数: 72 · 论文数: 387
H
Hemant Ghadi
H 指数: 18 · 论文数: 101
P
P. Singh
H 指数: 18 · 论文数: 98
D
Debjit Pal
H 指数: 11 · 论文数: 71
K
Kiran Kumari
H 指数: 10 · 论文数: 43
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