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S

Sangsig Kim

korea university

37H指数
350论文数
7.0K被引数
收录论文 111
发表时间
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Ternary multiplexer and encoder implementations using reconfigurable logic-in-memory cells基于可重构存储逻辑单元的三元多路复用器和编码器实现
errAin Shams Engineering Journal
IF5.9
err2026-06-25
err0
errOAAI
errYoonsoo Chun; Juhee Jeon; Hyojoo Heo; Jaewook Lim; Kyoungah Cho; Sangsig Kim
err分享
err收藏
Reconfigurable Logic-in-Memory Operations Enabled by Triple-Gated Feedback Field-Effect Transistors for Area-Efficient Computing由三栅极反馈场效应晶体管实现的可重构存内运算，用于提高计算面积效率
errAdvanced Engineering Materials
IF3.3
err2026-05-31
err0
errOAAI
errMinhyeok Seol; Yunwoo Shin; Donghyung Lee; Dongki Kim; Kyoungah Cho; Sangsig Kim
err分享
err收藏
A Dual-Laser Raman Strategy for Fast and Direct Detection and Quantification of Microplastics in Water双激光拉曼策略用于水中微塑料的快速直接检测与定量
errPolymers
IF4.9
err2026-04-27
err0
errOAAI
errHongtaek Kim; Yong Ju Lee; Sangsig Kim
err分享
err收藏
Dual Entropy Source Physical Unclonable Functions of Reconfigurable Feedback Field-Effect Transistors with Polycrystalline Silicon Channels双熵源可重构反馈场效应晶体管多晶硅通道物理不可克隆函数
errAdvanced Intelligent Systems
IF6.1
err2025-11-16
err0
errOAAI
errTaeho Park; Yunwoo Shin; Hyojoo Heo; Kyoungah Cho; Sangsig Kim
err分享
err收藏
3-bit memory operation of capacitor-less one-transistor one-diode DRAM cell无电容的一晶体管一极管DRAM单元的3位存储操作
errScience China Information Sciences
IF7.6
err2025-07-30
err0
PREAI
errSeungho Ryu; Kyoungah Cho; Sangsig Kim
err分享
err收藏
Binary and ternary compatible NAND/NOR logic-in-memory cell constructed with single-gated feedback field-effect transistors用单栅反馈场效应晶体管构造的二元和三元兼容NAND/NOR逻辑存储单元
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-05-01
err0
PREAI
errLee, Donghyung; Shin, Yunwoo; Son, Jaemin; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings
errHELIYON
IF3.6
err2024-07-01
err0
errOAAI
errKang, Mingu; Cho, Kyoungah; Seol, Minhyeok; Kim, Sangsub; Kim, Sangsig
err分享
err收藏
Capacitorless Two-Transistor Dynamic Random-Access Memory Cells Comprising Amorphous Indium-Tin-Gallium-Zinc Oxide Thin-Film Transistors for the Multiply-Accumulate Operation无电容双晶体管动态随机存取存储器单元，包括用于多次累积操作的非晶铟锡镓锌氧化物薄膜晶体管
errADVANCED MATERIALS TECHNOLOGIES
IF6.2
err2024-05-09
err3
errOAAI
errRyu, Seungho; Kang, Mingu; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors
errNANOMATERIALS
IF4.3
err2024-03-23
err0
errOAAI
errSon, Jaemin; Jeon, Juhee; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure
errSCIENTIFIC REPORTS
IF3.9
err2024-03-18
err4
errOAAI
errHan, Jongseong; Son, Jaemin; Ryu, Seungho; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Binarized neural network of diode array with high concordance to vector-matrix multiplication
errSCIENTIFIC REPORTS
IF3.9
err2024-03-11
err0
errOAAI
errShin, Yunwoo; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors三栅场效应晶体管的温度相关反馈操作
errNANOMATERIALS
IF4.3
err2024-03-09
err0
errOAAI
errPark, Taeho; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States具有准非易失性存储状态的反馈场效应晶体管的读取操作机制
errNANOMATERIALS
IF4.3
err2024-01-18
err0
errOAAI
errJeon, Juhee; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors由反馈场效应晶体管组成的1t DRAM阵列的干扰特性
errMICROMACHINES
IF3
err2023-05-28
err7
errOAAI
errJeon, Juhee; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning使用TCAD增强的机器学习预测反馈场效应晶体管的器件特性
errMICROMACHINES
IF3
err2023-02-21
err3
errOAAI
errWoo, Sola; Jeon, Juhee; Kim, Sangsig
err分享
err收藏
Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors
errIEEE ACCESS
IF3.6
err2023-01-01
err5
errOAAI
errJeon, Juhee; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Universal logic-in-memory cell enabling all basic Boolean algebra logic
errSCIENTIFIC REPORTS
IF3.9
err2022-11-22
err5
errOAAI
errBaek, Eunwoo; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
New ternary inverter with memory function using silicon feedback field-effect transistors
errSCIENTIFIC REPORTS
IF3.9
err2022-07-28
err8
errOAAI
errSon, Jaemin; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors
errSCIENTIFIC REPORTS
IF3.9
err2022-07-22
err6
errOAAI
errJeon, Juhee; Woo, Sola; Cho, Kyoungah; Kim, Sangsig
err分享
err收藏
Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2022-06-01
err12
PREAI
errKong, Heesung; Cho, Kyoungah; Lee, Hosang; Lee, Seungjun; Lim, Junhyung; Kim, Sangsig
err分享
err收藏

研究方向

暂无研究方向
合作学者
合作期刊
S
Sang‐Woo Kim
H 指数: 115 · 论文数: 1.2K
J
Jong‐Heun Lee
H 指数: 99 · 论文数: 586
D
Dennis G. Hall
H 指数: 75 · 论文数: 695
D
Dong‐Won Kim
H 指数: 66 · 论文数: 732
J
Jeunghee Park
H 指数: 61 · 论文数: 245
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