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H

H. Tang

yale university

25H指数
82论文数
2.1K被引数
收录论文 19
发表时间
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Millisecond coherence times in gigahertz-frequency mechanical oscillatorsGHz频率机械振荡器中的毫秒级相干时间
errNature Physics
IF18.4
err2026-07-09
err0
errOAAI
errYizhi Luo; Hilel Hagai Diamandi; Hanshi Li; Runjiang Bi; David Mason; Taekwan Yoon; Xinghan Guo; Hanlin Tang; Ryan O. Behunin; Frederick J. Walker; Charles H. Ahn; Peter T. Rakich
err分享
err收藏
Leveraging polymer architecture design with acylamino functionalization for electrolytes to enable highly durable lithium metal batteries利用聚合物架构设计和酰基氨基功能化的电解质，实现高度耐用的锂金属电池
errENERGY & ENVIRONMENTAL SCIENCE
IF30.8
err2024-01-01
err0
PREAI
errZheng, Jiayu; Duan, Lingyan; Ma, Hang; An, Qi; Liu, Qing; Sun, Yongjiang; Zhao, Genfu; Tang, Hanlin; Li, Yang; Wang, Shimin; Xu, Qijun; Wang, Lilian; Guo, Hong
err分享
err收藏
Growth of crack-free, carbon-doped GaN and AlGaN/GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-06-23
err18
PREAI
errHaffouz, S.; Tang, H.; Rolfe, S.; Bardwell, J. A.
err分享
err收藏
Si(111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-04-26
err21
PREAI
errTang, H; Haffouz, S; Bardwell, JA
err分享
err收藏
Effect of template morphology on the efficiency of InGaN/GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-03-16
err10
PREAI
errTang, H; Haffouz, S; Powell, A; Bardwell, JA; Webb, J
err分享
err收藏
Uniformity of AlGaN/GaN HEMTs grown by ammonia-MBE on 2-in. sapphire substrate
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2005-01-01
err2
errOAAI
errHsu, EM; Bardwell, JA; Haffouz, S; Tang, H; Storey, C; Chyurlia, P
err分享
err收藏
Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-10-22
err14
PREAI
errTang, H; Bardwell, JA; Webb, JB; Moisa, S; Fraser, J; Rolfe, S
err分享
err收藏
Growth of high mobility GaN and AlGaN/GaN high electron mobility translator structures on 4H-SiC by ammonia molecular-beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-06-11
err27
PREAI
errWebb, JB; Tang, H; Bardwell, JA; Coleridge, P
err分享
err收藏
Properties of carbon-doped GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-02-05
err167
PREAI
errTang, H; Webb, JB; Bardwell, JA; Raymond, S; Salzman, J; Uzan-Saguy, C
err分享
err收藏
Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-12-04
err40
PREAI
errMaher, H; DiSanto, DW; Soerensen, G; Bolognesi, CR; Tang, H; Webb, JB
err分享
err收藏
Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-08-16
err176
PREAI
errWebb, JB; Tang, H; Rolfe, S; Bardwell, JA
err分享
err收藏
Local microstructures of Si in GaN studied by x-ray absorption spectroscopy
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-07-26
err9
PREAI
errLu, ZH; Tyliszczak, T; Broderson, P; Hitchcock, AP; Webb, JB; Tang, H; Bardwell, J
err分享
err收藏
Growth of high mobility GaN by ammonia-molecular beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-04-19
err88
PREAI
errTang, H; Webb, JB
err分享
err收藏
Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-11-24
err42
PREAI
errHamdani, F; Botchkarev, AE; Tang, H; Kim, W; Morkoc, H
err分享
err收藏
Optical properties of GaN/AlGaN multiple quantum well microdisks
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-11-17
err43
errOAAI
errMair, RA; Zeng, KC; Lin, JY; Jiang, HX; Zhang, B; Dai, L; Tang, H; Botchkarev, A; Kim, W; Morkoc, H
err分享
err收藏
High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-10-13
err258
PREAI
errXu, GY; Salvador, A; Kim, W; Fan, Z; Lu, C; Tang, H; Morkoc, H; Smith, G; Estes, M; Goldenberg, B; Yang, W; Krishnankutty, S
err分享
err收藏
Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-09-08
err60
PREAI
errZeng, KC; Lin, JY; Jiang, HX; Salvador, A; Popovici, G; Tang, H; Kim, W; Morkoc, H
err分享
err收藏
Optical properties of GaN/AlxGa1-xN quantum wells
errPHYSICAL REVIEW B
IF3.7
err1997-07-15
err18
PREAI
errCingolani, R; Coli, G; Rinaldi, R; Calcagnile, L; Tang, H; Botchkarev, A; Kim, W; Salvador, A; Morkoc, H
err分享
err收藏
The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-05-12
err5
errOAAI
errWang, HT; Chou, ST; Chang, LB; Wang, TW; Tang, HC
err分享
err收藏

研究方向

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合作学者
合作期刊
H
H. Morkoç̌
H 指数: 102 · 论文数: 1.3K
R
R. Cingolani
H 指数: 96 · 论文数: 1.4K
芦
芦政 (Zheng‐Hong Lu)
H 指数: 83 · 论文数: 631
J
J. Y. Lin
H 指数: 75 · 论文数: 604
H
H. X. Jiang
H 指数: 75 · 论文数: 655
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