M. Asif Khan - Publications, H-index & Citations

M. Asif Khan

机构信息待补充

30H指数

93论文数

3.7K被引数

收录论文 19

发表时间

Photoluminescence dynamics in highly nonhomogeneously excited GaN

APPLIED PHYSICS LETTERS

IF3.6

2007-04-20

OAAI

Kuokstis, E.; Tamulaitis, G.; Liu, K.; Shur, M. S.; Li, J. W.; Yang, J. W.; Khan, M. Asif

Reduction of threading dislocation densities in AlN/sapphire epilayers driven by growth mode modification

APPLIED PHYSICS LETTERS

IF3.6

2006-01-30

113

PREAI

Bai, J; Dudley, M; Sun, WH; Wang, HM; Khan, MA

Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2005-05-10

PREAI

Shatalov, M; Chitnis, A; Yadav, P; Hasan, MF; Khan, J; Adivarahan, V; Maruska, HP; Sun, WH; Khan, MA

Luminescence from stacking faults in gallium nitride

APPLIED PHYSICS LETTERS

IF3.6

2005-01-04

358

PREAI

Liu, R; Bell, A; Ponce, FA; Chen, CQ; Yang, JW; Khan, MA

Electron emission through a multilayer planar nanostructured solid-state field-controlled emitter

APPLIED PHYSICS LETTERS

IF3.6

2004-03-15

PREAI

Semet, V; Binh, VT; Zhang, JP; Yang, J; Khan, MA; Tsu, R

Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy

APPLIED SURFACE SCIENCE

IF6.9

2002-12-01

PREAI

Zhou, J; Reddic, JE; Sinha, M; Ricker, WS; Karlinsey, J; Yang, JW; Khan, MA; Chen, DA

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2002-02-11

178

PREAI

Kuokstis, E; Yang, JW; Simin, G; Khan, MA; Gaska, R; Shur, MS

Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2001-12-24

PREAI

Kuokstis, E; Zhang, J; Ryu, MY; Yang, JW; Simin, G; Khan, MA; Gaska, R; Shur, MS

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2001-10-15

116

PREAI

Simin, G; Koudymov, A; Tarakji, A; Hu, X; Yang, J; Khan, MA; Shur, MS; Gaska, R

Pulsed atomic layer epitaxy of quaternary AlInGaN layers

APPLIED PHYSICS LETTERS

IF3.6

2001-08-13

101

PREAI

Zhang, J; Kuokstis, E; Fareed, Q; Wang, H; Yang, J; Simin, G; Khan, MA; Gaska, R; Shur, M

Jointly optimized trellis-coded residual vector quantization

IEEE TRANSACTIONS ON COMMUNICATIONS

IF8.3

2001-06-01

PREAI

Khan, MAU; Smith, MJT; McLaughlin, SW

Optical bandgap formation in AlInGaN alloys

APPLIED PHYSICS LETTERS

IF3.6

2000-10-02

PREAI

Tamulaitis, G; Kazlauskas, K; Jursenas, S; Zukauskas, A; Khan, MA; Yang, JW; Zhang, J; Simin, G; Shur, MS; Gaska, R

Conditional entropy-constrained trellis-coded RVQ with application to image coding

ieee signal processing magazine

IF3.9

2000-03-01

PREAI

Khan, MAU; Smith, MJT; McLaughlin, SW

Ultrafast second-harmonic generation spectroscopy of GaN thin films on sapphire

PHYSICAL REVIEW B

IF3.7

1999-01-15

PREAI

Angerer, WE; Yang, N; Yodh, AG; Khan, MA; Sun, CJ

Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction

APPLIED PHYSICS LETTERS

IF3.6

1998-03-16

PREAI

Kuksenkov, DV; Temkin, H; Osinsky, A; Gaska, R; Khan, MA

Study of contact formation in AlGaN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

1997-09-22

PREAI

Liu, QZ; Yu, LS; Deng, F; Lau, SS; Chen, Q; Yang, JW; Khan, MA

Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates

APPLIED PHYSICS LETTERS

IF3.6

1997-03-17

OAAI

Sun, CJ; Yang, JW; Lim, BW; Chen, Q; Anwar, MZ; Khan, MA; Osinsky, A; Temkin, H; Schetzina, JF

Photoluminescence study of high quality InGaN-GaN single heterojunctions

APPLIED PHYSICS LETTERS

IF3.6

1996-07-29

PREAI

Sun, CJ; Yang, JW; Chen, Q; Lim, BW; Anwar, MZ; Khan, MA; Temkin, H; Weismann, D; Brenner, I

High field flashover strength of intrinsic gallium nitride and aluminum nitride in vacuum

APPLIED PHYSICS LETTERS

IF3.6

1996-07-08

PREAI

Khan, MA; Chen, O; Sudarshan, TS; Gradinaru, G

研究方向