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A 32 kb 0.35-1.2 V, 50 MHz-2.5 GHz Bit-Interleaved SRAM With 8 T SRAM Cell and Data Dependent Write Assist in 28-nm UTBB-FDSOI CMOS 32 kb 0.35-1.2 V，50 MHz-2.5 GHz位交错SRAM，带有8 t SRAM单元和数据相关写入辅助，采用28 nm utbb-fdsoi CMOS Grover, Anuj; Visweswaran, G. S.; Parthasarathy, Chittoor R.; Daud, Mohammad; Turgis, David; Giraud, Bastien; Noel, Jean-Philippe; Miro-Panades, Ivan; Moritz, Guillaume; Beigne, Edith; Flatresse, Philippe; Kumar, Promod; Azmi, Shamsi 分享 收藏
Performance of conducting polymer electrodes for stimulating neuroprosthetics Green, R. A.; Matteucci, P. B.; Hassarati, R. T.; Giraud, B.; Dodds, C. W. D.; Chen, S.; Byrnes-Preston, P. J.; Suaning, G. J.; Poole-Warren, L. A.; Lovell, N. H. 分享 收藏
Technology Variability From a Design Perspective Nikolic, Borivoje; Park, Ji-Hoon; Kwak, Jaehwa; Giraud, Bastien; Guo, Zheng; Pang, Liang-Teck; Toh, Seng Oon; Jevtic, Ruzica; Qian, Kun; Spanos, Costas 分享 收藏
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