Dipanjan Sen - Publications, H-index & Citations

Dipanjan Sen

Penn State University

17H指数

72论文数

1.1K被引数

收录论文 17

发表时间

Light-induced giant random telegraph noise in CuScP2S6/MoS2 heterostructures and their use in noise resilience image inference 光诱导的巨随机电报噪声在CuScP2S6/MoS2异质结构中及其在抗噪声图像推理中的应用

Nature Communications

IF15.7

2026-04-16

OAAI

Arpan Ghosh; Dipanjan Sen; Samriddha Ray; Rishikesh T. Nair; Anshul Rasyotra; Rui Gusmao; Zdenek Sofer; Saptarshi Das

Exploiting the Photoresponse in LiInP2Se6 for Image Processing 利用LiInP2Se6的光响应进行图像处理

Nano Letters

IF9.1

2026-04-06

OAAI

Anshul Rasyotra; Anirban Chowdhury; Dipanjan Sen; Subir Ghosh; Arpan Ghosh; Rui Gusmao; Divya Somvanshi; Joan M. Redwing; Zdenek Sofer; Saptarshi Das

van der Waals dielectrics for threshold engineering in two-dimensional field effect transistors 范德华介电材料在二维场效应晶体管阈值工程中的应用

Nature Communications

IF15.7

2026-02-16

OAAI

Dipanjan Sen; Harikrishnan Ravichandran; Safdar Imam; Subir Ghosh; Krishnendu Mukhopadhyay; Md Yasir Bashir; Thomas S. Ie; Vlastimil Mazanek; Jan Luxa; Chen Chen; Joan M. Redwing; Zdenek Sofer; Shubham Sahay; Mercouri G. Kanatzidis; Saptarshi Das

Nanosheets Derived from Titanium Diboride as Gate Insulators for Atomically Thin Transistors 由二硼化钛衍生的纳米片作为原子薄晶体管的栅极绝缘体

ACS NANO

IF16

2025-05-19

PREAI

Rasyotra, A; Das, M; Sen, D; Zhang, ZY; Pannone, A; Chen, C; Redwing, JM; Yang, Y; Jasuja, K; Das, S

High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (NOV, 10.1038/s41928-024-01265-2, 2024)

NATURE ELECTRONICS

IF40.9

2024-11-14

OAAI

Das, Mayukh; Sen, Dipanjan; Sakib, Najam U.; Ravichandran, Harikrishnan; Sun, Yongwen; Zhang, Zhiyu; Ghosh, Subir; Venkatram, Pranavram; Radhakrishnan, Shiva Subbulakshmi; Sredenschek, Alexander; Yu, Zhuohang; Sarkar, Kalyan Jyoti; Sadaf, Muhtasim Ul Karim; Meganathan, Kalaiarasan; Pannone, Andrew; Han, Ying; Sanchez, David Emanuel; Somvanshi, Divya; Sofer, Zdenek; Terrones, Mauricio; Yang, Yang; Das, Saptarshi

High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials 使用二维材料的替代掺杂和厚度控制的高性能p型场效应晶体管

NATURE ELECTRONICS

IF40.9

2024-11-06

PREAI

Das, Mayukh; Sen, Dipanjan; Sakib, Najam U.; Ravichandran, Harikrishnan; Sun, Yongwen; Zhang, Zhiyu; Ghosh, Subir; Venkatram, Pranavram; Subbulakshmi Radhakrishnan, Shiva; Sredenschek, Alexander; Yu, Zhuohang; Sarkar, Kalyan Jyoti; Sadaf, Muhtasim Ul Karim; Meganathan, Kalaiarasan; Pannone, Andrew; Han, Ying; Sanchez, David Emanuel; Somvanshi, Divya; Sofer, Zdenek; Terrones, Mauricio; Yang, Yang; Das, Saptarshi

A Peripheral-Free True Random Number Generator Based on Integrated Circuits Enabled by Atomically Thin Two-Dimensional Materials 基于原子级薄二维材料实现的集成电路的无外围真随机数发生器

ACS NANO

IF16

2023-08-24

PREAI

Ravichandran, Harikrishnan; Sen, Dipanjan; Wali, Akshay; Schranghamer, Thomas F.; Trainor, Nicholas; Redwing, Joan M.; Ray, Biswajit; Das, Saptarshi

Graphene Strain-Effect Transistor with Colossal ON/OFF Current Ratio Enabled by Reversible Nanocrack Formation in Metal Electrodes on Piezoelectric Substrates 通过在压电基板上的金属电极中形成可逆的纳米裂纹来实现具有巨大开/关电流比的石墨烯应变效应晶体管

NANO LETTERS

IF9.1

2023-03-30

PREAI

Zheng, Yikai; Sen, Dipanjan; Das, Sarbashis; Das, Saptarshi