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收藏GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy -: art. no. 231121
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; Zhao, H; Peng, HL; Xu, YQ; Li, SY; He, ZH; Ren, ZW; Han, Q; Yang, XH; Du, Y; Wu, RH
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收藏1.55 μm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs -: art. no. 111105
Han, Q; Yang, XH; Niu, ZC; Ni, HQ; Xu, YQ; Zhang, SY; Du, Y; Peng, LH; Zhao, H; Tong, CZ; Wu, RH; Wang, QM
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收藏High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature
Ni, HQ; Niu, ZC; Xu, XH; Xu, YQ; Zhang, W; Wei, X; Bian, LF; He, ZH; Han, Q; Wu, RH
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