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G

Geert Eneman

interuniversity microelectronics centre

38H指数
381论文数
5.4K被引数
收录论文 17
发表时间
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The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2019-09-12
err3
PREAI
errHsu, Po-Chun (Brent); Simoen, Eddy; Merckling, Clement; Eneman, Geert; Mols, Yves; Han, Han; Alian, AliReza; Collaert, Nadine; Heyns, Marc
err分享
err收藏
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
errAPL MATERIALS
IF4.5
err2018-01-10
err13
errOAAI
errNuytten, T.; Bogdanowicz, J.; Witters, L.; Eneman, G.; Hantschel, T.; Schulze, A.; Favia, P.; Bender, H.; De Wolf, I.; Vandervorst, W.
err分享
err收藏
Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2016-02-01
err0
PREAI
errRitzenthaler, R.; Schram, T.; Witters, L.; Mitard, J.; Spessot, A.; Caillat, C.; Hellings, G.; Eneman, G.; Aoulaiche, M.; Na, H. -J.; Son, Y.; Noh, K. B.; Fazan, P.; Lee, S. -G.; Collaert, N.; Mocuta, A.; Horiguchi, N.; Thean, A. V. -Y.
err分享
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Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-06-05
err28
PREAI
errLee, Jae Woo; Sasaki, Yuichiro; Cho, Moon Ju; Togo, Mitsuhiro; Boccardi, Guillaume; Ritzenthaler, Romain; Eneman, Geert; Chiarella, Thomas; Brus, Stephan; Horiguchi, Naoto; Groeseneken, Guido; Thean, Aaron
err分享
err收藏
Challenges and opportunities in advanced Ge pMOSFETs
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2012-12-01
err79
PREAI
errSimoen, E.; Mitard, J.; Hellings, G.; Eneman, G.; De Jaeger, B.; Witters, L.; Vincent, B.; Loo, R.; Delabie, A.; Sioncke, S.; Caymax, M.; Claeys, C.
err分享
err收藏
High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2011-01-01
err24
PREAI
errSimoen, E.; Eneman, G.; Gonzalez, M. Bargallo; Kobayashi, D.; Luque Rodriguez, A.; Jimenez Tejada, J. -A.; Claeys, C.
err分享
err收藏
Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2011-01-01
err22
errOAAI
errGonzalez, M. B.; Eneman, G.; Wang, G.; De Jaeger, B.; Simoen, E.; Claeys, C.
err分享
err收藏
Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-06-11
err2
PREAI
errGonzalez, M. Bargallo; Simoen, E.; Vissouvanadin, B.; Eneman, G.; Verheyen, P.; Loo, R.; Claeys, C.
err分享
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Stress analysis of Si1-xGex embedded source/drain junctions
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2008-10-01
err12
PREAI
errGonzalez, M. Bargallo; Simoen, E.; Naka, N.; Okuno, Y.; Eneman, G.; Hikavyy, A.; Verheyen, P.; Loo, R.; Claeys, C.; Machkaoutsan, V.; Tomasini, P.; Thomas, S. G.; Lu, J. P.; Wise, R.
err分享
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Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2008-10-01
err8
PREAI
errSimoen, E.; Brouwers, G.; Eneman, G.; Gonzalez, M. Bargallo; De Jaeger, B.; Mitard, J.; Brunco, D. P.; Souriau, L.; Cody, N.; Thomas, S.; Meuris, M.
err分享
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Reduced self-heating by strained silicon substrate engineering
errAPPLIED SURFACE SCIENCE
IF6.9
err2008-07-01
err26
PREAI
errO'Neill, A.; Agaiby, R.; Olsen, S.; Yang, Y.; Hellstrom, P. -E.; Ostling, M.; Oehme, M.; Lyutovich, K.; Kasper, E.; Eneman, G.; Verheyen, P.; Loo, R.; Claeys, C.; Fiegna, C.; Sangiorgi, E.
err分享
err收藏
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2008-01-01
err280
PREAI
errBrunco, D. P.; De Jaeger, B.; Eneman, G.; Mitard, J.; Hellings, G.; Satta, A.; Terzieva, V.; Souriau, L.; Leys, F. E.; Pourtois, G.; Houssa, M.; Winderickx, G.; Vrancken, E.; Sioncke, S.; Opsomer, K.; Nicholas, G.; Caymax, M.; Stesmans, A.; Van Steenbergen, J.; Mertens, P. W.; Meuris, M.; Heyns, M. M.
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Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2006-02-01
err2
PREAI
errTakakura, K.; Furukawa, H.; Kuroki, S.; Hayama, K.; Kudou, T.; Shigaki, K.; Ohyama, H.; Simoen, E.; Eneman, G.; Claeys, C.
err分享
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Analysis of the leakage current origin in thin strain relaxed buffer substrates
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2006-01-01
err13
errOAAI
errEneman, G; Simoen, E; Delhougne, R; Verheyen, P; Simons, V; Loo, R; Caymax, M; Claeys, C; Vandervorst, W; De Meyer, K
err分享
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Influence of dislocations in strained Si/relaxed SiGe layers on n+/p-junctions in a metal-oxide-semiconductor field-effect transistor technology -: art. no. 192112
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-11-04
err32
PREAI
errEneman, G; Simoen, E; Delhougne, R; Verheyen, P; Loo, R; De Meyer, K
err分享
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On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors -: art. no. 223509
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-05-27
err19
PREAI
errSimoen, E; Eneman, G; Verheyen, P; Delhougne, R; Loo, R; Meyer, KD; Claeys, C
err分享
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Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2005-02-01
err7
PREAI
errEneman, G; Verheyen, P; Rooyackers, R; Delhougne, R; Loo, R; Caymax, M; Meunier-Beillard, P; De Meyer, K; Vandervorst, W
err分享
err收藏

研究方向

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合作学者
合作期刊
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Jae Wook Lee
H 指数: 93 · 论文数: 2.3K
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G. Groeseneken
H 指数: 78 · 论文数: 1.3K
M
Marc Heyns
H 指数: 62 · 论文数: 1.0K
A
A. Stesmans
H 指数: 59 · 论文数: 611
M
Michael Oehme
H 指数: 56 · 论文数: 439
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