S.L. Delage - Publications, H-index & Citations

S.L. Delage

universite toulouse iii - paul sabatier

32H指数

257论文数

3.8K被引数

收录论文 7

发表时间

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE

APPLIED PHYSICS LETTERS

IF3.6

2024-07-03

PREAI

Pitaval, Charles; Aroulanda, Sebastien; Fouzi, Yassine; Defrance, Nicolas; Lacam, Cedric; Michel, Nicolas; El Bondry, Nadia; Oualli, Mourad; Teisseire, Laurent; Jacquet, Jean-Claude; Piotrowicz, Stephane; Gaquiere, Christophe; Delage, Sylvain L.

In Situ NMR Measurements of Vapor Deposited Ice

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2016-10-26

OAAI

Lisitsin-Baranovsky, E.; Delage, S.; Sucre, O.; Ofer, O.; Ayotte, P.; Alexandrowicz, G.

Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2014-11-12

OAAI

Nsele, S. D.; Escotte, L.; Tartarin, J. -G.; Piotrowicz, S.; Delage, S. L.

Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature

APPLIED PHYSICS LETTERS

IF3.6

2008-08-05

PREAI

Duquenne, C.; Djouadi, M. A.; Tessier, P. Y.; Jouan, P. Y.; Besland, M. P.; Brylinski, C.; Aubry, R.; Delage, S.

Deuterium passivation of electrically active defects in nonintentionally doped n-GaN (vol 90, art. no. 072107, 2007)

APPLIED PHYSICS LETTERS

IF3.6

2007-07-12

OAAI

Mimila-Arroyo, J.; Barbe, M.; Jomard, F.; Chevallier, J.; di Forte-Poisson, M. A.; Delage, S. L.; Dua, C.

Deuterium passivation of electrically active defects in nonintentionally doped n-GaN

APPLIED PHYSICS LETTERS

IF3.6

2007-02-16

PREAI

Mimila-Arroyo, J.; Barbe, M.; Jomard, F.; Chevallier, J.; di Forte-Poisson, M. A.; Delage, S. L.; Dua, C.

GaAs-based materials for heterojunction bipolar transistor's: reliability results and MMIC applications

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2001-12-01

PREAI

di Forte-Poisson, MA; Delage, SL; Cassette, S

研究方向