H. Shen - Publications, H-index & Citations

H. Shen

rutgers university system

32H指数

197论文数

6.7K被引数

收录论文 32

发表时间

Enhanced far ultraviolet spectral response and gain in SiC avalanche photodiodes

APPLIED PHYSICS LETTERS

IF3.6

2021-06-01

PREAI

Sampath, A., V; Chen, Y.; Llopis, A.; Shen, H.; Smith, J.; Kelley, S.; Schuster, J.; Nouketcha, F.; Campbell, J. C.; Wraback, M.

Tunable surface acoustic wave device based on acoustoelectric interaction in ZnO/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2015-08-17

OAAI

Li, Rui; Reyes, Pavel I.; Ragavendiran, Sowmya; Shen, H.; Lu, Yicheng

Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced electron filter

APPLIED PHYSICS LETTERS

IF3.6

2013-08-16

PREAI

Rodak, L. E.; Sampath, A. V.; Gallinat, C. S.; Chen, Y.; Zhou, Q.; Campbell, J. C.; Shen, H.; Wraback, M.

P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes

APPLIED PHYSICS LETTERS

IF3.6

2012-08-27

PREAI

Sampath, A. V.; Zhou, Q. G.; Enck, R. W.; McIntosh, D.; Shen, H.; Campbell, J. C.; Wraback, M.

Enhanced THz emission from c-plane InxGa1-xN due to piezoelectric field-induced electron transport

APPLIED PHYSICS LETTERS

IF3.6

2012-05-09

PREAI

Woodward, Nathaniel; Gallinat, C.; Rodak, L. E.; Metcalfe, G. D.; Shen, H.; Wraback, M.

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

APPLIED PHYSICS LETTERS

IF3.6

2011-12-22

298

OAAI

Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D.; Shen, H.; Wraback, M.; Lubyshev, D.; Qiu, Y.; Fastenau, J. M.; Liu, A. W. K.; Elhamri, S.; Cellek, O. O.; Zhang, Y. -H.

Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well

APPLIED PHYSICS LETTERS

IF3.6

2009-07-21

PREAI

Shen, H.; Wraback, M.; Zhong, H.; Tyagi, A.; DenBaars, S. P.; Nakamura, S.; Speck, J. S.

Determination of polarization field in a semipolar (1122) InGaN/GaN single quantum well using Franz-Keldysh oscillations in electroreflectance

APPLIED PHYSICS LETTERS

IF3.6

2009-06-17

PREAI

Shen, H.; Wraback, M.; Zhong, H.; Tyagi, A.; DenBaars, S. P.; Nakamura, S.; Speck, J. S.

Structure and surface properties of epitaxial Mg0.4Zn0.6O alloy films on different substrates

SMART MATERIALS AND STRUCTURES

IF3.8

2009-03-09

PREAI

Zhuang, L.; Wong, K. H.; Shen, H.

Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN

APPLIED PHYSICS LETTERS

IF3.6

2008-10-27

PREAI

Koblmueller, G.; Hirai, A.; Wu, F.; Gallinat, C. S.; Metcalfe, G. D.; Shen, H.; Wraback, M.; Speck, J. S.

n-InGaN/p-GaN single heterostructure light emitting diode with p-side down

APPLIED PHYSICS LETTERS

IF3.6

2008-09-30

PREAI

Reed, M. L.; Readinger, E. D.; Shen, H.; Wraback, M.; Syrkin, A.; Usikov, A.; Kovalenkov, O. V.; Dmitriev, V. A.

GaN doped with neodymium by plasma-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2008-02-13

OAAI

Readinger, E. D.; Metcalfe, G. D.; Shen, H.; Wraback, M.

Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency

APPLIED PHYSICS LETTERS

IF3.6

2007-05-18

153

PREAI

Zhong, J.; Chen, H.; Saraf, G.; Lu, Y.; Choi, C. K.; Song, J. J.; Mackie, D. M.; Shen, H.

Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO 低温沉积对Au与块状单晶n型ZnO接触的影响

APPLIED SURFACE SCIENCE

IF6.9

2007-02-01

PREAI

Wright, J. S.; Khanna, Rohit; Voss, L. F.; Stafford, L.; Gila, B. P.; Norton, D. P.; Pearton, S. J.; Wang, Hung-Ta; Jang, S.; Anderson, T.; Chen, J. J.; Kang, B. S.; Ren, F.; Shen, H.; LaRoche, Jeffrey R.; Ip, Kelly

Design of transparent indium tin oxide-based interdigitated fingers for metal semiconductor metal photodetector

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2007-01-01

PREAI

Jang, Soohwan; Ren, F.; Emanetoglu, N.; Shen, H.; Chang, W.; Pearton, S. J.

Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77 K 在77 K下沉积的增强型肖特基势垒高度Au/n-gaas二极管中的界面差异

APPLIED SURFACE SCIENCE

IF6.9

2007-01-01

PREAI

Herrero, Andrew M.; Gerger, A. M.; Gila, B. P.; Pearton, S. J.; Wang, Hung-Ta; Jang, S.; Anderson, T.; Chen, J. J.; Kang, B. S.; Ren, F.; Shen, H.; LaRoche, Jeffrey R.; Smith, Kurt V.

Increased Schottky barrier heights for Au on n- and p-type GaN using cryogenic metal deposition

APPLIED PHYSICS LETTERS

IF3.6

2006-09-18

PREAI

Wang, Hung-Ta; Jang, S.; Anderson, T.; Chen, J. J.; Kang, B. S.; Ren, F.; Voss, L. F.; Stafford, L.; Khanna, R.; Gila, B. P.; Pearton, S. J.; Shen, H.; LaRoche, Jeffrey R.; Smith, Kurt V.

Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2006-08-14

104

OAAI

Koblmuller, G.; Gallinat, C. S.; Bernardis, S.; Speck, J. S.; Chern, G. D.; Readinger, E. D.; Shen, H.; Wraback, M.

Thermal stability of Au Schottky diodes on GaAs deposited at either 77 or 300 K

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2006-01-01

PREAI