Haixia Gao - Publications, H-index & Citations

高海峡 (Haixia Gao)

Xidian University

16H指数

93论文数

736被引数

收录论文 26

发表时间

Multimodal Resistive Switching Coexistence of Analog, Digital, and Complementary Resistive Switching Modes in SiNx/AlOxNy-Based Resistive Random Access Memory 多模态电阻开关：在SiNx/AlOxNy基电阻随机存取存储器中模拟、数字和互补电阻开关模式的共存

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

IF1.9

2025-12-01

PREAI

Wang, Rui; Gao, Haixia; Qiu, Xuan; Zhao, Yang; Zeng, Deyang; Zhou, Zhengyu; Ma, Xiaohua

A rapid protocol for distinguishing the quality of Sanshengyin and identifying potential markers by the three-in-one fingerprint profiles with antioxidant activity

JOURNAL OF CHROMATOGRAPHY A

IF4

2025-01-01

PREAI

Zhang, Xiaoding; Wang, Lingjiao; Zong, Rui; Zhang, Zhongyang; Cheng, Fangfang; Song, Chaohui; Sun, Guoxiang; Gao, Haixia

Unveiling activity of transition metal single-atom sites on the graphene-like BC2P monolayer for oxygen evolution reaction: A density functional theory study

MOLECULAR CATALYSIS

IF4.9

2024-12-01

PREAI

Fu, Xi; Lin, Jian; Liang, Guangyao; Liao, Wenhu; Gao, Haixia; Li, Xiaowu; Li, Liming

Coexistence of analog and digital resistive switching behaviors in TiN/SiNx resistive random access memory device

APPLIED PHYSICS LETTERS

IF3.6

2024-11-18

PREAI

Gao, Haixia; Zhao, Yang; Zhu, Shilong; Qiu, Xuan; Wang, Rui; Guo, Jingli; Ma, Xiaohua; Yang, Yintang

A novel evaluation mode of Nao An Capsules using multi-wavelength fusion fingerprint combined with quantitative analysis of multi-components by a single marker method and antioxidant activity

MICROCHEMICAL JOURNAL

IF5.1

2024-11-01

PREAI

Song, Chaohui; Zhang, Shuo; Yun, Peng; Dong, Xiaohui; Yang, Meng; Sun, Guoxiang; Cheng, Fangfang; Liu, Mingjia; Gao, Haixia; Chen, Fuzun; Wang, Lingjiao

Analyzing switching variability of SiNx-based RRAM in terms of Joule heating dissipation

APPLIED PHYSICS LETTERS

IF3.6

2024-10-21

PREAI

Duan, Yiwei; Gao, Haixia; Yang, Yintang

Roles of Impurity Levels in 3d Transition Metal-Doped Two-Dimensional Ga2O3

MATERIALS

IF3.2

2024-09-18

OAAI

Zeng, Hui; Ma, Chao; Li, Xiaowu; Fu, Xi; Gao, Haixia; Wu, Meng

Bipolar and complementary resistive switching induced by barrier regulation based on compliance current

APPLIED PHYSICS LETTERS

IF3.6

2024-06-05

PREAI

Qiu, Xuan; Gao, Haixia; Zhu, Shilong; Bai, Yifan; Zhao, Yang; Wang, Rui; Ma, Xiaohua; Yang, Yintang

Role of Native Defects in Fe-Doped β-Ga2O3 天然缺陷在掺铁 β-Ga2O3中的作用

MATERIALS

IF3.2

2023-10-19

OAAI

Zeng, Hui; Wu, Meng; Gao, Haixia; Wang, Yuansheng; Xu, Hongfei; Cheng, Meijuan; Lin, Qiubao

Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM

APPLIED PHYSICS LETTERS

IF3.6

2023-07-17

PREAI

Qian, Mengyi; Gao, Haixia; Duan, Yiwei; Guo, Jingshu; Bai, Yifan; Zhu, Shilong; Ma, Xiaohua; Yang, Yintang

Transient form of polyvinyl alcohol-based devices with configurable resistive switching behavior for security neuromorphic computing

APPLIED PHYSICS LETTERS

IF3.6

2023-04-24

PREAI

Sun, Jing; Wang, Zhan; Wang, Saisai; Cao, Yaxiong; Gao, Haixia; Wang, Hong; Ma, Xiaohua; Hao, Yue

Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity

APPLIED PHYSICS LETTERS

IF3.6

2023-03-14

PREAI

Yang, Yintang; Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Guo, Jingshu; Yang, Mei; Ma, Xiaohua

Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM

APPLIED PHYSICS LETTERS

IF3.6

2022-08-16

PREAI

Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Sun, Yuxin; Wu, Shuliang; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang

The influence of device structure on resistance switching in PbS QDs film inserted RRAM

APPLIED PHYSICS LETTERS

IF3.6

2022-07-19

PREAI

Sun, Yuxin; Gao, Haixia; Wu, Shuliang; Duan, Yiwei; Qian, Mengyi; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang

In-depth understanding of physical mechanism of the gradual switching in AlOxNy-based RRAM as memory and synapse device

APPLIED PHYSICS LETTERS

IF3.6

2022-06-29

PREAI

Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Sun, Yuxin; Wu, Shuliang; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang

Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM

APPLIED PHYSICS LETTERS

IF3.6

2022-05-19

PREAI

Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Sun, Yuxin; Wu, Shuliang; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang

CO2 reduction reaction pathways on single-atom Co sites: Impacts of local coordination environment 单原子Co位上的CO2还原反应途径: 局部配位环境的影响

Chinese Journal of Catalysis

IF17.7

2022-03-01

OAAI

Gao, Haixia; Liu, Kang; Luo, Tao; Chen, Yu; Hu, Junhua; Fu, Junwei; Liu, Min

Effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing

APPLIED PHYSICS LETTERS

IF3.6

2021-05-05

PREAI

Shen, Xuping; Gao, Haixia; Duan, Yiwei; Sun, Yuxin; Guo, Jingshu; Yu, Zhenxi; Wu, Shuliang; Ma, Xiaohua; Yang, Yintang

Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM

APPLIED PHYSICS LETTERS

IF3.6

2021-01-04

PREAI

Duan, Yiwei; Gao, Haixia; Guo, Jingshu; Yang, Mei; Yu, Zhenxi; Shen, Xuping; Wu, Shuliang; Sun, Yuxin; Ma, Xiaohua; Yang, Yintang

Electrode-induced polarity conversion in Nb2O5/NbOx resistive switching devices

APPLIED PHYSICS LETTERS

IF3.6

2020-12-15

PREAI

Zhou, Ziliang; Yang, Mei; Fu, Zhen; Wang, Hong; Ma, Xiaohua; Gao, Haixia

研究方向