logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
A

Ajit Kanale

North Carolina State University

14H指数
66论文数
487被引数
收录论文 9
发表时间
logo
Mitigating Voltage Imbalance Across Series-Connected 10 kV SiC JBS Diodes in a Medium-Voltage High-Power 3L-NPC Converter缓解中压大功率3L-NPC转换器中串联连接的10 kV SiC JBS二极管上的电压不平衡
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2024-03-01
err2
PREAI
errParashar, Sanket; Kolli, Nithin; Kokkonda, Raj Kumar; Kanale, Ajit; Bhattacharya, Subhashish; Baliga, Jay
err分享
err收藏
Dynamic Voltage Balancing Across Series-Connected 10 kV SiC JBS Diodes in Medium Voltage 3L-NPC Power Converter Having Snubberless Series-Connected 10 kV SiC MOSFETs具有无缓冲串联10 kV SiC mosfet的中压3L-NPC功率转换器中串联10 kV SiC JBS二极管的动态电压平衡
errIEEE OPEN JOURNAL OF THE INDUSTRIAL ELECTRONICS SOCIETY
IF4.3
err2024-01-01
err0
errOAAI
errParashar, Sanket; Kolli, Nithin; Kokkonda, Raj Kumar; Kanale, Ajit; Bhattacharya, Subhashish; Baliga, Bantval Jayant
err分享
err收藏
Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application用于中压电流源逆变器应用的3.3 kV SiC MOSFET和肖特基二极管反向电压阻断开关的性能评估
errIEEE ACCESS
IF3.6
err2023-01-01
err4
errOAAI
errNarasimhan, Sneha; Kanale, Ajit; Bhattacharya, Subhashish; Baliga, Jayant B.
err分享
err收藏
Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications单片反向阻断1.2 kV 4H-SiC功率晶体管: 一种用于电流源逆变器应用的新型单芯片三端器件
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2022-09-01
err8
PREAI
errKanale, Ajit; Agarwal, Aditi; Baliga, B. Jayant; Bhattacharya, Subhashish
err分享
err收藏
Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology用于通过基本 (EMM) 拓扑增强SiC功率MOSFET短路能力的Si功率MOSFET的选择方法
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2021-07-01
err9
PREAI
errKanale, Ajit; Baliga, B. Jayant
err分享
err收藏
Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2021-03-01
err11
PREAI
errAgarwal, Aditi; Kanale, Ajit; Baliga, B. Jayant
err分享
err收藏
A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs一种新的用户可配置方法，可改善1.2 kV SiC功率mosfet的短路耐用性
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2021-02-01
err18
PREAI
errKanale, Ajit; Baliga, B. Jayant
err分享
err收藏
Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement用于改善SiC功率MOSFET短路能力的基本拓扑中Si gss-dmm器件的理论优化
errIEEE ACCESS
IF3.6
err2021-01-01
err9
errOAAI
errKanale, Ajit; Baliga, B. Jayant
err分享
err收藏
Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter使用与发射极串联的栅源短路Si耗尽型MOSFET增强1.2 kV Si IGBT的短路能力
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2020-06-01
err7
PREAI
errKanale, Ajit; Baliga, B. Jayant
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
S
Subhashish Bhattacharya
H 指数: 62 · 论文数: 794
A
Aditi Agarwal
H 指数: 15 · 论文数: 54
S
Sanket Parashar
H 指数: 11 · 论文数: 41
N
Nithin Kolli
H 指数: 9 · 论文数: 28
R
Raj Kumar Kokkonda
H 指数: 7 · 论文数: 26
查看更多