Jie Zhang - Publications, H-index & Citations

Jie Zhang

Shanghai Jiao Tong University

16H指数

67论文数

1.5K被引数

收录论文 24

发表时间

Lift force in chiral, compressible granular matter 手性、可压缩颗粒物质中的升力

PHYSICAL REVIEW E

IF2.4

2025-11-24

PREAI

Pawlowski, Jaroslaw; Dudziak, Marcin; Baggioli, Matteo; Zhang, Jie; Surowka, Piotr

County-level source-sink balance and carbon allocation of regional peak emissions: Model construction and application 县域源汇平衡与区域峰值排放的碳分配：模型构建与应用

ECOLOGICAL INDICATORS

IF7.4

2025-04-01

PREAI

Tao, Bianshiyu; Wu, Fengping; Wang, Jigan; Zhu, Mingming; Zhang, Jie; Xing, Zhencheng

Trendelenburg position is a reasonable alternative to passive leg raising for predicting volume responsiveness in mechanically ventilated patients in the ICU 特伦德伦堡体位是预测机械通气ICU患者容量反应性的合理替代方法，可替代被动抬腿。

CRITICAL CARE

IF9.3

2025-02-04

OAAI

Wang, Zhiyong; Zhang, Jie; Zhao, Jing; Wu, Yaxuan; Zhang, Shiya; Yin, Chengfen; Gao, Xinjing; Xu, Lei

Assessing and predicting the value of ecosystem services in Sanya City, Hainan Island, China

ECOLOGICAL INDICATORS

IF7.4

2025-01-01

OAAI

Song, Peihong; Yang, Qiu; Wu, Wenyin; Su, Tianyan; Jiang, Yamin; Lu, Jingli; Sun, Zhongyi; Zhang, Jie; Yu, Rui; Wang, Peng; Wu, Lan; Yang, Huai; Liu, Wenjie

Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2024-08-19

PREAI

Li, Yangfeng; Dong, Zian; Chen, Shuai; Wang, Qin; Li, Tong; Chen, Shulin; Zheng, Kun; Zhang, Jie; Ding, Guojian; Wang, Yang; Jia, Haiqiang; Yang, Rong; Liao, Lei

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

MICROMACHINES

IF3

2024-08-02

OAAI

Zhang, Jie; Li, Xiangdong; Ji, Jian; You, Shuzhen; Chen, Long; Wang, Lezhi; Li, Zilan; Hao, Yue; Zhang, Jincheng

Effects of TMAl predose time on the quality of submicron-thick GaN on Si

VACUUM

IF3.9

2024-08-01

PREAI

Li, Yangfeng; Zhang, Jie; Dong, Zian; Zheng, Kun; Yang, Rong; Jia, Haiqiang; Wang, Wenxin; Chen, Hong; Jiang, Yang

Enhanced contact performance of high-brightness micro-LEDs via ITO/Al anode stack and annealing process 通过ITO/Al阳极堆叠和退火工艺增强高亮度微发光二极管的接触性能

SCIENTIFIC REPORTS

IF3.9

2024-05-27

OAAI

Meng, Zeyang; Lu, Chaoyu; Wang, Guanghua; Gao, Sibo; Deng, Feng; Zhang, Jie; Gao, Shuxiong; Yang, Wenyun

Influence of well position on the electroluminescence characteristics of InGaN/GaN single quantum well red light-emitting diodes

JOURNAL OF LUMINESCENCE

IF3.6

2022-10-01

PREAI

Zhang, Shuyuan; Liu, Wei; Zhang, Jie; Zhao, Hengyan; Liu, Zeyu; Hu, Zhangbo

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

APPLIED PHYSICS LETTERS

IF3.6

2021-02-03

PREAI

Feng, Yuxia; Sun, Huarui; Yang, Xuelin; Liu, Kang; Zhang, Jie; Shen, Jianfei; Liu, Danshuo; Cai, Zidong; Xu, Fujun; Tang, Ning; Yu, Tongjun; Wang, Xinqiang; Ge, Weikun; Shen, Bo

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

PHYSICAL REVIEW MATERIALS

IF3.4

2020-07-13

PREAI

Zhang, Jie; Yang, Xuelin; Feng, Yuxia; Li, Yue; Wang, Maojun; Shen, Jianfei; Wei, Lai; Liu, Danshuo; Wu, Shan; Cai, Zidong; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo

The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-09-02

PREAI

Cui, Peng; Wei, Lincheng; Lin, Guangyang; Zhang, Jie; Zhao, Haochen; Zeng, Yuping

Vertical leakage induced current degradation and relevant traps with large lattice relaxation in AlGaN/GaN heterostructures on Si

APPLIED PHYSICS LETTERS

IF3.6

2018-01-16

PREAI

Hu, Anqi; Yang, Xuelin; Cheng, Jianpeng; Song, Chunyan; Zhang, Jie; Feng, Yuxia; Ji, Panfeng; Xu, Fujun; Zhang, Yan; Yang, Zhijian; Tang, Ning; Ge, Weikun; Wang, Xinqiang; Hu, Zonghai; Guo, Xia; Shen, Bo

Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates Si衬底上AlGaN/GaN异质结构中热电子辅助的垂直泄漏/击穿

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-07-01

PREAI

Hu, Anqi; Yang, Xuelin; Cheng, Jianpeng; Guo, Lei; Zhang, Jie; Feng, Yuxia; Ji, Panfeng; Tang, Ning; Ge, Weikun; Wang, Xinqiang; Shen, Bo

Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates

APPLIED PHYSICS LETTERS

IF3.6

2017-05-10

PREAI

Feng, Yuxia; Yang, Xuelin; Cheng, Jianpeng; Zhang, Jie; Ji, Panfeng; Shen, Jianfei; Hu, Anqi; Xu, Fujun; Yu, Tongjun; Wang, Xinqiang; Shen, Bo

Enhanced transport properties in InAlGaN/AlN/GaN heterostructures on Si (111) substrates: The role of interface quality

APPLIED PHYSICS LETTERS

IF3.6

2017-04-25

PREAI

Zhang, Jie; Yang, Xuelin; Cheng, Jianpeng; Feng, Yuxia; Ji, Panfeng; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-12-01

PREAI

Cheng, Jianpeng; Yang, Xuelin; Zhang, Jie; Hu, Anqi; Ji, Panfeng; Feng, Yuxia; Guo, Lei; He, Chenguang; Zhang, Lisheng; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

SCIENTIFIC REPORTS

IF3.9

2016-11-23

OAAI

Guo, Lei; Yang, Xuelin; Hu, Anqi; Feng, Zhihong; Lv, Yuanjie; Zhang, Jie; Cheng, Jianpeng; Tang, Ning; Wang, Xinqiang; Ge, Weikun; Shen, Bo

Reconfiguring active particles by electrostatic imbalance

NATURE MATERIALS

IF38.5

2016-07-11

467

PREAI