W. Alan Doolittle - Publications, H-index & Citations

W. Alan Doolittle

university system of georgia

32H指数

211论文数

3.2K被引数

收录论文 40

发表时间

Impact and mitigation of surface oxides on aluminum nitride substrates

APPLIED SURFACE SCIENCE

IF6.9

2025-04-01

PREAI

Matthews, Christopher M.; Motoki, Keisuke; Ahmad, Habib; Engel, Zachary; Lee, Sangho; Marshall, Emily N.; Doolittle, W. Alan

Experimental observation of ballistic to diffusive transition in phonon thermal transport of AlN thin films AlN薄膜声子热输运中弹道向扩散转变的实验观察

APPLIED PHYSICS LETTERS

IF3.6

2024-12-24

PREAI

Hoque, Md Shafkat Bin; Koh, Yee Rui; Zare, Saman; Liao, Michael E.; Huynh, Kenny; Goorsky, Mark S.; Liu, Zeyu; Shi, Jingjing; Graham, Samuel; Luo, Tengfei; Ahmad, Habib; Doolittle, W. Alan; Hopkins, Patrick E.

Cathodoluminescence investigation of defect states in n- and p-type AlN

APPLIED PHYSICS LETTERS

IF3.6

2024-01-29

PREAI

Matthews, Christopher M.; Ahmad, Habib; Hussain, Kamal; Chandrashekhar, M. V. S.; Khan, Asif; Doolittle, W. Alan

Kinetic Model for Ternary III-Nitride Epitaxy: The Role of Vertical Segregation on Phase Separation

CRYSTAL GROWTH & DESIGN

IF3.4

2023-10-31

OAAI

Matthews, Christopher M.; Engel, Zachary; Motoki, Keisuke; Doolittle, W. Alan

Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis

APPLIED PHYSICS LETTERS

IF3.6

2023-08-15

OAAI

Doolittle, W. Alan; Matthews, Christopher M.; Ahmad, Habib; Motoki, Keisuke; Lee, Sangho; Ghosh, Aheli; Marshall, Emily N.; Tang, Amanda L.; Manocha, Pratyush; Yoder, P. Douglas

Dynamical memristive neural networks and associative self-learning architectures using biomimetic devices

FRONTIERS IN NEUROSCIENCE

IF3.2

2023-04-20

OAAI

Zivasatienraj, Bill; Doolittle, W. Alan

Wet-based digital etching on GaN and AlGaN

APPLIED PHYSICS LETTERS

IF3.6

2022-01-10

OAAI

Shih, Pao-Chuan; Engel, Zachary; Ahmad, Habib; Doolittle, William Alan; Palacios, Tomas

High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films 同质外延生长的氮化镓 (GaN) 薄膜的高热导率和热边界电导

PHYSICAL REVIEW MATERIALS

IF3.4

2021-10-14

PREAI

Koh, Yee Rui; Bin Hoque, Md Shafkat; Ahmad, Habib; Olson, David H.; Liu, Zeyu; Shi, Jingjing; Wang, Yekan; Huynh, Kenny; Hoglund, Eric R.; Aryana, Kiumars; Howe, James M.; Goorsky, Mark S.; Graham, Samuel; Luo, Tengfei; Hite, Jennifer K.; Doolittle, W. Alan; Hopkins, Patrick E.

Substantial P-Type Conductivity of AlN Achieved via Beryllium Doping

ADVANCED MATERIALS

IF26.8

2021-09-02

PREAI

Ahmad, Habib; Lindemuth, Jeff; Engel, Zachary; Matthews, Christopher M.; McCrone, Timothy M.; Doolittle, William Alan

Thermal boundary conductance across epitaxial metal/sapphire interfaces

PHYSICAL REVIEW B

IF3.7

2020-11-23

PREAI

Koh, Yee Rui; Shi, Jingjing; Wang, Baiwei; Hu, Renjiu; Ahmad, Habib; Kerdsongpanya, Sit; Milosevic, Erik; Doolittle, W. Alan; Gall, Daniel; Tian, Zhiting; Graham, Samuel; Hopkins, Patrick E.

Comprehensive Analysis of Metal Modulated Epitaxial GaN

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-07-24

PREAI

Ahmad, Habib; Motoki, Keisuke; Clinton, Evan A.; Matthews, Christopher M.; Engel, Zachary; Doolittle, W. Alan

Selective wet etching of lithium gallate

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Kropewnicki, TJ; Doolittle, WA; Carter-Coman, C; Kang, S; Kohl, PA; Jokerst, NM; Brown, AS

Thin-Film Lithium Niobites and Their Chemical Properties for Lithium-Ion Storage and Diffusion 薄膜铌酸锂及其对锂离子存储和扩散的化学性质

CHEMELECTROCHEM

IF3.5

2019-10-14

OAAI

Lee, Dong-Chan; Shank, Joshua C.; Tellekamp, M. Brooks; Doolittl, W. Alan; Alamgir, Faisal M.

Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance

APPLIED PHYSICS LETTERS

IF3.6

2019-08-21

OAAI

Clinton, Evan A.; Engel, Zachary; Vadiee, Ehsan; Carpenter, Joe V.; Holman, Zachary C.; Doolittle, W. Alan

Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2

PHYSICAL REVIEW MATERIALS

IF3.4

2019-07-16

OAAI

Wahila, Matthew J.; Paez, Galo; Singh, Christopher N.; Regoutz, Anna; Sallis, Shawn; Zuba, Mateusz J.; Rana, Jatinkumar; Tellekamp, M. Brooks; Boschker, Jos E.; Markurt, Toni; Swallow, Jack E. N.; Jones, Leanne A. H.; Veal, Tim D.; Yang, Wanli; Lee, Tien-Lin; Rodolakis, Fanny; Sadowski, Jerzy T.; Prendergast, David; Lee, Wei-Cheng; Doolittle, W. Alan; Piper, Louis F. J.

Direct observation of delithiation as the origin of analog memristance in LixNbO2

APL MATERIALS

IF4.5

2019-07-10

OAAI

Howard, Sebastian A.; Singh, Christopher N.; Paez, Galo J.; Wahila, Matthew J.; Wangoh, Linda W.; Sallis, Shawn; Tirpak, Keith; Liang, Yufeng; Prendergast, David; Zuba, Mateusz; Rana, Jatinkumar; Weidenbach, Alex; McCrone, Timothy M.; Yang, Wanli; Lee, Tien-Lin; Rodolakis, Fanny; Doolittle, William; Lee, Wei-Cheng; Piper, Louis F. J.

Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing

SCIENTIFIC REPORTS

IF3.9

2018-08-28

OAAI

Shank, Joshua C.; Tellekamp, M. Brooks; Wahila, Matthew J.; Howard, Sebastian; Weidenbach, Alex S.; Zivasatienraj, Bill; Piper, Louis F. J.; Doolittle, W. Alan

Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

APPLIED PHYSICS LETTERS

IF3.6

2018-06-19

OAAI

Clinton, Evan A.; Vadiee, Ehsan; Shen, Shyh-Chiang; Mehta, Karan; Yoder, P. Douglas; Doolittle, W. Alan

Molecular Beam Epitaxy of lithium niobium oxide multifunctional materials

crystal growth design

IF2

2017-04-01

OAAI

Tellekamp, M. Brooks; Shank, Joshua C.; Doolittle, W. Alan