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M
M. Jagadesh Kumar
indian institute of technology system (iit system)
47
H指数
354
论文数
7.8K
被引数
0
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13
发表时间
发表时间
IF
被引数
Targeting Diabetic Wounds with Nanostructured Lipid Carriers: A Pathogenesis-Guided, Drug-Repurposing Approach
靶向糖尿病伤口的纳米结构脂质载体:一种基于发病机制的药物重定位方法
Journal of Drug Delivery Science and Technology
IF
4.9
2025-12-13
0
PRE
AI
Abhishek Chauhan; Vaishali thakur; Sonia Dhiman; Thakur Gurjeet Singh; Mohit Kumar; Syed Mahmood; Bharat Kumar Reddy; Ankit Awasthi
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Neurocognitive Mechanisms Underlying Social Media Marketing and Purchase Intention: The Mediating Role of Consumer Engagement with Reference to Emotional Attention, and Cognitive Appraisal
社交媒体营销与购买意向背后的神经认知机制:以消费者参与为中介,并参考情绪注意力和认知评估
Annals of Neurosciences
IF
2.4
2025-12-01
0
PRE
AI
Bajpai, Mansi; Pandiya, Sudhanshu; Mishra, Pallavi; Agrawal, Pravin Kumar; Kumar, Mohit
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Quantum Security and the Race for an Un-Hackable Digital Future
IETE TECHNICAL REVIEW
IF
1.8
2025-11-02
0
PRE
AI
Jagadesh Kumar, Mamidala
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Wireless Sensor Networks (WSNs) in the Wilderness: The Promise and Peril of Sensor-Based Ecology
无线传感器网络(WSNs)在野外环境中的应用:基于传感器的生态学的机遇与挑战
IETE TECHNICAL REVIEW
IF
1.8
2025-09-03
0
PRE
AI
Jagadesh Kumar, Mamidala
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Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study
IEEE ACCESS
IF
3.6
2020-01-01
12
OA
AI
Jain, Aakash Kumar; Kumar, Mamidala Jagadesh
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Schottky bipolar I-MOS: An I-MOS with Schottky electrodes and an open-base BJT configuration for reduced operating voltage
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2017-04-01
2
PRE
AI
Kannan, N.; Kumar, M. Jagadesh
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Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs
IEEE ACCESS
IF
3.6
2017-01-01
42
OA
AI
Sahay, Shubham; Kumar, Mamidala Jagadesh
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PNPN tunnel FET with controllable drain side tunnel barrier width: Proposal and analysis
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2015-10-01
32
PRE
AI
Abdi, Dawit Burusie; Kumar, M. Jagadesh
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Dielectric modulated overlapping gate-on-drain tunnel-FET as a label-free biosensor
作为无标记生物传感器的电介质调制重叠漏极隧道FET
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2015-10-01
82
PRE
AI
Abdi, Dawit Burusie; Kumar, M. Jagadesh
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Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer
SCIENTIFIC REPORTS
IF
3.9
2015-01-19
35
OA
AI
Nadda, Kanika; Jagadesh Kumar, M.
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Effect of the Ge mole fraction on the formation of a conduction path in cylindrical strained-silicon-on-SiGe MOSFETs
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2008-07-01
25
PRE
AI
Singh, Tarun Vir; Kumar, M. Jagadesh
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Nanoscale SOI MOSFETs with electrically induced source/drain extension: Novel attributes and design considerations for suppressed short-channel effects
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2006-05-01
13
OA
AI
Orouji, Ali A.; Kumar, M. Jagadesh
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Elimination of bipolar induced drain breakdown and single transistor latch in submicron PD SOI MOSFET
消除亚微米PD SOI MOSFET中的双极诱导漏极击穿和单晶体管锁存
IEEE TRANSACTIONS ON RELIABILITY
IF
5.7
2002-09-01
18
PRE
AI
Kumar, MJ; Verma, V
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研究方向
暂时未获取到该数据
合作学者
合作期刊
T
Thakur Gurjeet Singh
H 指数: 43 · 论文数: 470
S
Syed Mahmood
H 指数: 36 · 论文数: 173
A
Ali A. Orouji
H 指数: 35 · 论文数: 334
A
Ankit Awasthi
H 指数: 29 · 论文数: 118
S
Shubham Sahay
H 指数: 24 · 论文数: 113
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