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收藏Distributed polarization-doped GaN p-n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV
Nomoto, Kazuki; Li, Wenshen; Song, Bo; Hu, Zongyang; Zhu, Mingda; Qi, Meng; Protasenko, Vladimir; Zhang, Zexuan; Pan, Ming; Gao, Xiang; Marchand, Hugues; Johnson, Wayne; Jena, Debdeep; Xing, Huili Grace
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收藏Activation of buried p-GaN in MOCVD-regrown vertical structures
Li, Wenshen; Nomoto, Kazuki; Lee, Kevin; Islam, S. M.; Hu, Zongyang; Zhu, Mingda; Gao, Xiang; Xie, Jinqiao; Pilla, Manyam; Jena, Debdeep; Xing, Huili Grace
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收藏Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
Hu, Zongyang; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Qi, Meng; Pan, Ming; Gao, Xiang; Protasenko, Vladimir; Jena, Debdeep; Xing, Huili Grace
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