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C

C. Pettenkofer

Helmholtz Association

H指数:39

被引数:4,441

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Epitaxial growth of CuGaSe2 thin-films by MBE-Influence of the Cu/Ga ratio

APPLIED SURFACE SCIENCE

IF6.9

2017-09-018

OAAI

The CuInSe2-Culn3Se5 defect compound interface: Electronic structure and band alignment

APPLIED PHYSICS LETTERS

IF3.6

2012-08-0625

OAAI

Lateral Distribution of Anodic Oxides and Strain on Self-Organized Fractal Silicon Photoelectrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2012-01-014

PREAI

Electronic band structure of epitaxial CuInSe2 films

PHYSICAL REVIEW B

IF3.7

2011-09-1412

PREAI

ALD of ZnO using diethylzinc as metal-precursor and oxygen as oxidizing agent

APPLIED SURFACE SCIENCE

IF6.9

2011-09-0142

PREAI

Surface orientation dependent band alignment for CuInSe2-ZnSe-ZnO

APPLIED PHYSICS LETTERS

IF3.6

2011-03-1525

PREAI

SURFACE-ANALYSIS INVESTIGATIONS ON THE REACTION OF FES2 WITH ALKALI-METALS

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

IF0

2010-05-086

PREAI

Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(100) (4 x 2)/c(8 x 2) surface

APPLIED SURFACE SCIENCE

IF6.9

2008-11-018

PREAI

Electron binding energies of hydrated H3O+ and OH-:: Photoelectron spectroscopy of aqueous acid and base solutions combined with electronic structure calculations

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

IF15.6

2006-03-08110

PREAI

Morphology of the Si-ZnO interface

APPLIED SURFACE SCIENCE

IF6.9

2005-11-0149

PREAI

Origin of the electrochemical potential in intercalation electrodes:: Experimental estimation of the electronic and ionic contributions for na intercalated into TiS2

JOURNAL OF PHYSICAL CHEMISTRY B

IF2.9

2004-09-2233

PREAI

Band symmetries of GaSe(0001) studied by spin-resolved electron spectroscopy using circularly polarized radiation -: art. no. 045320

PHYSICAL REVIEW B

IF3.7

2004-01-289

OAAI

XPS TEM and NRA investigations of Zn(Se,OH)/Zn(OH)2 films on Cu(In,Ga)(S,Se)2 substrates for highly efficient solar cells

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2003-01-0193

PREAI

Electronic passivation of Si(111) by Ga-Se half-sheet termination

APPLIED PHYSICS LETTERS

IF3.6

2002-02-2516

OAAI

Electronic band structure of single-crystal and single-layer WS2:: Influence of interlayer van der Waals interactions -: art. no. 205416

PHYSICAL REVIEW B

IF3.7

2001-11-02184

OAAI

Chemical passivation of Si(111) capped by a thin GaSe layer

薄GaSe层覆盖的Si(111) 的化学钝化

APPLIED SURFACE SCIENCE

IF6.9

2000-10-0119

PREAI

Van der Waals-xenotaxy: growth of GaSe(0001) on low index silicon surfaces

Van der Waals-xenotaxy: GaSe(0001) 在低折射率硅表面上的生长

APPLIED SURFACE SCIENCE

IF6.9

2000-10-019

PREAI

Synchrotron radiation studies on the growth of TSe2 (T = Ta, Ti) thin films on Ta substrates:: intercalation and de-intercalation of Na

APPLIED SURFACE SCIENCE

IF6.9

2000-07-012

PREAI

In-Situ Photoelectron Spectroscopy Study of a TiS2 Thin Film Cathode in an Operating Na Intercalation Electrochemical Cell

IF2.6

2000-05-0115

PREAI

Van der waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)

APPLIED PHYSICS LETTERS

IF3.6

2000-02-2810

OAAI