H.‐H. Tseng - Publications, H-index & Citations

H.‐H. Tseng

texas state university san marcos

26H指数

88论文数

2.6K被引数

收录论文 14

发表时间

One-Step Microwave-Assisted Synthesis of MnFe2O4/rGO Nanocomposites and Their Electrochemical Properties in Supercapacitors

ACS OMEGA

IF4.3

2025-01-27

OAAI

Shih, Kun-Yauh; Tseng, Hui-Ying

The influence of fluorine on boron-enhanced diffusion in silicon by BF2+ implantation through oxide during high temperature rapid thermal anneal

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Wang, LZ; Luo, MSC; Tseng, HH; Ajuria, SA

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

APPLIED PHYSICS LETTERS

IF3.6

2013-12-04

146

PREAI

Tseng, H. H.; Li, H.; Mashanov, V.; Yang, Y. J.; Cheng, H. H.; Chang, G. E.; Soref, R. A.; Sun, G.

Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

APPLIED PHYSICS LETTERS

IF3.6

2013-05-09

119

PREAI

Tseng, H. H.; Wu, K. Y.; Li, H.; Mashanov, V.; Cheng, H. H.; Sun, G.; Soref, R. A.

Strain-enhanced photoluminescence from Ge direct transition

APPLIED PHYSICS LETTERS

IF3.6

2010-05-24

PREAI

Cheng, T. -H.; Peng, K. -L.; Ko, C. -Y.; Chen, C. -Y.; Lan, H. -S.; Wu, Y. -R.; Liu, C. W.; Tseng, H. -H.

Competitiveness between direct and indirect radiative transitions of Ge

APPLIED PHYSICS LETTERS

IF3.6

2010-03-04

PREAI

Cheng, T. -H.; Ko, C. -Y.; Chen, C. -Y.; Peng, K. -L.; Luo, G. -L.; Liu, C. W.; Tseng, H. -H.

Bulk and Interface effects on voltage linearity of ZrO2-SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications

APPLIED PHYSICS LETTERS

IF3.6

2009-07-16

PREAI

Park, S. D.; Park, C.; Gilmer, D. C.; Park, H. K.; Kang, C. Y.; Lim, K. Y.; Burham, C.; Barnett, J.; Kirsch, P. D.; Tseng, H. H.; Jammy, R.; Yeom, G. Y.

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

APPLIED PHYSICS LETTERS

IF3.6

2008-03-04

193

PREAI

Kirsch, P. D.; Sivasubramani, P.; Huang, J.; Young, C. D.; Quevedo-Lopez, M. A.; Wen, H. C.; Alshareef, H.; Choi, K.; Park, C. S.; Freeman, K.; Hussain, M. M.; Bersuker, G.; Harris, H. R.; Majhi, P.; Choi, R.; Lysaght, P.; Lee, B. H.; Tseng, H. -H.; Jammy, R.; Boescke, T. S.; Lichtenwalner, D. J.; Jur, J. S.; Kingon, A. I.

Molecular thin films: A new type of magnetic switch

ADVANCED MATERIALS

IF26.8

2007-10-02

143

OAAI

Heutz, Sandrine; Mitra, Chiranjib; Wu, Wei; Fisher, Andrew J.; Kerridge, Andrew; Stoneham, Marshall; Harker, Tony H.; Gardener, Julie; Tseng, Hsiang-Han; Jones, Tim S.; Renner, Christoph; Aeppli, Gabriel

Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

APPLIED PHYSICS LETTERS

IF3.6

2007-08-07

124

PREAI

Govindarajan, S.; Boescke, T. S.; Sivasubramani, P.; Kirsch, P. D.; Lee, B. H.; Tseng, H.-H.; Jammy, R.; Schroeder, U.; Ramanathan, S.; Gnade, B. E.

Thermal stability and electrical characterization of HfO2 films on thermally nitrided Si

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2004-01-01

PREAI

Bastos, KP; Morais, J; Miotti, L; Soares, GV; Pezzi, RP; da Silva, RCG; Boudinov, H; Baumvol, IJR; Hegde, RI; Tseng, HH; Tobinc, PJ

Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2

APPLIED PHYSICS LETTERS

IF3.6

2002-08-26

OAAI

Bastos, KP; Morais, J; Miotti, L; Pezzi, RP; Soares, GV; Baumvol, IJR; Hegde, RI; Tseng, HH; Tobin, PJ

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

APPLIED PHYSICS LETTERS

IF3.6

2002-08-12

PREAI

Gilmer, DC; Hegde, R; Cotton, R; Garcia, R; Dhandapani, V; Triyoso, D; Roan, D; Franke, A; Rai, R; Prabhu, L; Hobbs, C; Grant, JM; La, L; Samavedam, S; Taylor, B; Tseng, H; Tobin, P

Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2000-06-01

PREAI

Tseng, HH; Veteran, J; Tobin, PJ; Mogab, J; Tsui, PGY; Wang, V; Khare, M; Wang, XW; Ma, TP; Hobbs, C; Hegde, R; Hartig, M; Kenig, G; Blumenthal, R; Cotton, R; Kaushik, V; Tamagawa, T; Halpern, BL; Cui, GJ; Schmitt, JJ

研究方向