Y.K. Fang - Publications, H-index & Citations

Y.K. Fang

xi'an jiaotong university

22H指数

153论文数

1.7K被引数

收录论文 14

发表时间

An inverse integral method for correcting transient thermal effects in ignition delay measurements: a case of ethanol autoignition in rapid compression machines 用于校正点火延迟测量中瞬态热效应的反积分方法：乙醇在快速压缩机中自燃的案例

Fuel

IF7.5

2026-07-20

PREAI

Zhonghao Zhao; Yingtao Wu; Yuxin Fang; Song Cheng; Wuchuan Sun; Hexin Liu; Qiufan Tang; Chenglong Tang; Zuohua Huang

Intelligent Cross-Layer Handoff for Hybrid LEO-Terrestrial Aeronautical Networks 智能跨层切换技术用于混合LEO-地面航空网络

IEEE Wireless Communications Letters

IF5.5

2026-01-01

PREAI

Zhiqiang Dan; Qi Li; Yuxin Fang; Wenjun Wu; Zhipeng Wang; Jingjing Wang

EVA-02: A visual representation for neon genesis EVA-02: 霓虹灯创世纪的视觉表现

IMAGE AND VISION COMPUTING

IF4.2

2024-09-01

OAAI

Fang, Yuxin; Sun, Quan; Wang, Xinggang; Huang, Tiejun; Wang, Xinlong; Cao, Yue

A simple CMOS process compatible high performance parallel-stacked spiral inductor for advanced RF analog circuit applications

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2010-09-01

PREAI

Chen, S. M.; Fang, Y. K.; Lin, C. S.; Chiang, Y. T.; Juang, F. R.; Lin, C. I.

Origins of flash lamp annealing induced p-n junction leakages in a 45 nm p-MOSFET with strained SiGe source/drain

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2009-04-16

PREAI

Cheng, C. Y.; Fang, Y. K.; Hsieh, J. C.; Hsia, H.; Lin, S. S.; Hou, C. S.; Ku, K. C.; Sheu, Y. M.

Impact of the strained SiGe source/drain on hot carrier reliability for 45 nm p-type metal-oxide-semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2008-04-01

PREAI

Cheng, C. Y.; Fang, Y. K.; Hsieh, J. C.; Hsia, H.; Chen, W. M.; Lin, S. S.; Hou, C. S.

Mechanism and modelling of source/drain asymmetry variation in 65nm CMOS devices for SRAM and logic applications

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2008-01-28

PREAI

Lee, T. H.; Fang, Y. K.; Chiang, Y. T.; Lin, C. T.; Chen, M. S.; Cheng, O.

Failure mechanism of electromigration in via sidewall for copper dual damascene interconnection

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2006-01-01

OAAI

Hsu, Y. L.; Fang, Y. K.; Chiang, Y. T.; Chen, S. F.; Lin, C. Y.; Chou, T. H.; Chang, S. H.

A novel Ni capped high Q copper air gap spiral inductor

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2005-08-01

PREAI

Lin, CS; Fang, YK; Chen, SF; Lin, CY; Chou, TH; Chen, SM; Hsieh, MC

Switching transient analysis of a metal/ferroelectric/semiconductor switch diode with high speed response to infrared light

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

IF3.7

1999-05-01

PREAI

Chen, FY; Ho, JJ; Fang, YK; Shu, CY; Hsu, CY; Chen, JR; Ju, MS

High-gain p-i-n infrared photosensors with Bragg reflectors on amorphous silicon-germanium alloy

APPLIED PHYSICS LETTERS

IF3.6

1997-02-17

PREAI

Ho, JJ; Fang, YK; Wu, KH; Tsai, CS

A nonvolatile ferroelectric memory device with a floating gate

APPLIED PHYSICS LETTERS

IF3.6

1996-11-18

OAAI

Chen, FY; Fang, YK; Sun, MJ; Chen, JR

Experimental characterization and modeling of a ferroelectric bulk channel field effect transistor with nonvolatile memory characteristics

APPLIED PHYSICS LETTERS

IF3.6

1996-08-05

PREAI

Chen, FY; Fang, YK; Sun, MJ; Chen, JR

An infrared optical field effect transistor with high speed response

APPLIED PHYSICS LETTERS

IF3.6

1996-01-15

PREAI

Chen, FY; Fang, YK; Sun, MJ; Chen, JR

研究方向