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P. Dawson

University of Cambridge

42H指数
278论文数
7.0K被引数
收录论文 36
发表时间
Cubic GaN and InGaN/GaN quantum wells
err2022-11-15
err12
errOAAI
errBinks, D. J.; Dawson, P.; Oliver, R. A.; Wallis, D. J.
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Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence
err2022-01-01
err15
errOAAI
errKusch, Gunnar; Comish, Ella J.; Loeto, Kagiso; Hammersley, Simon; Kappers, Menno J.; Dawson, Phil; Oliver, Rachel A.; Massabuau, Fabien C-P
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Polar (In,Ga)N/GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the Green Gap Problem
err2020-04-27
err47
errOAAI
errTanner, Daniel S. P.; Dawson, Philip; Kappers, Menno J.; Oliver, Rachel A.; Schulz, Stefan
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Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells (vol 9, 18862, 2019)
err2020-03-24
err0
errOAAI
errRoble, A. A.; Patra, S. K.; Massabuau, F.; Frentrup, M.; Leontiadou, M. A.; Dawson, P.; Kappers, M. J.; Oliver, R. A.; Graham, D. M.; Schulz, S.
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Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
err2019-12-11
err13
errOAAI
errRoble, A. A.; Patra, S. K.; Massabuau, F.; Frentrup, M.; Leontiadou, M. A.; Dawson, P.; Kappers, M. J.; Oliver, R. A.; Graham, D. M.; Schulz, S.
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Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
err2018-10-02
err15
errOAAI
errChristian, G. M.; Schulz, S.; Rappers, M. J.; Humphreys, C. J.; Oliver, R. A.; Dawson, P.
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Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
err2018-09-15
err7
errOAAI
errChristian, George; Kappers, Menno; Massabuau, Fabien; Humphreys, Colin; Oliver, Rachel; Dawson, Philip
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Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence
err2016-12-05
err14
errOAAI
errZhu, Tongtong; Gachet, David; Tang, Fengzai; Fu, Wai Yuen; Oehler, Fabrice; Kappers, Menno J.; Dawson, Phil; Humphreys, Colin J.; Oliver, Rachel A.
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Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells
err2016-11-28
err8
errOAAI
errSchulz, S.; Tanner, D. S. P.; O'Reilly, E. P.; Caro, M. A.; Tang, F.; Griffiths, J. T.; Oehler, F.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J.; Sutherland, D.; Davies, M. J.; Dawson, P.
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Diatom Frustules as a Biomineralized Scaffold for the Growth of Molybdenum Disulfide Nanosheets
err2016-08-12
err15
errOAAI
errLewis, Edward A.; Lewis, David J.; Tedstone, Aleksander A.; Kime, Georgia; Hammersley, Simon; Dawson, Philip; Binks, David J.; O'Brien, Paul; Haigh, Sarah J.
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Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
err2016-06-20
err20
errOAAI
errDavies, M. J.; Dawson, P.; Hammersley, S.; Zhu, T.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A.
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Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique
err2016-05-24
err9
errOAAI
errSpencer, B. F.; Smith, W. F.; Hibberd, M. T.; Dawson, P.; Beck, M.; Bartels, A.; Guiney, I.; Humphreys, C. J.; Graham, D. M.
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Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
err2015-12-10
err57
errOAAI
errSchulz, S.; Tanner, D. P.; O'Reilly, E. P.; Caro, M. A.; Martin, T. L.; Bagot, P. A. J.; Moody, M. P.; Tang, F.; Griffiths, J. T.; Oehler, F.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J.; Sutherland, D.; Davies, M. J.; Dawson, P.
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Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
err2015-10-01
err74
errOAAI
errHammersley, S.; Kappers, M. J.; Massabuau, F. C. -P.; Sahonta, S. -L.; Dawson, P.; Oliver, R. A.; Humphreys, C. J.
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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the green gap problem
err2014-09-19
err59
errOAAI
errMassabuau, F. C-P; Davies, M. J.; Oehler, F.; Pamenter, S. K.; Thrush, E. J.; Koppers, M. J.; Kovacs, A.; Williams, T.; Hopkins, M. A.; Humphreys, C. J.; Dawson, P.; Dunin-Borkowski, R. E.; Etheridge, J.; Allsopp, D. W. E.; Oliver, R. A.
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The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
err2014-09-05
err27
errOAAI
errDavies, M. J.; Dawson, P.; Massabuau, F. C. -P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.
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The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
err2013-10-03
err57
PREAI
errOliver, R. A.; Massabuau, F. C-P; Kappers, M. J.; Phillips, W. A.; Thrush, E. J.; Tartan, C. C.; Blenkhorn, W. E.; Badcock, T. J.; Dawson, P.; Hopkins, M. A.; Allsopp, D. W. E.; Humphreys, C. J.
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High excitation carrier density recombination dynamics of InGaN/GaNquantum well structures: Possible relevance to efficiency droop
err2013-01-18
err38
errOAAI
errDavies, M. J.; Badcock, T. J.; Dawson, P.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J.
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All-optical generation of coherent in-plane charge oscillations in GaAs quantum wells
err2011-03-21
err10
PREAI
errPriyadarshi, Shekhar; Pierz, Klaus; Siegner, Uwe; Dawson, Philip; Bieler, Mark
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Carrier localization mechanisms in InxGa1-xN/GaN quantum wells
err2011-03-16
err179
errOAAI
errWatson-Parris, D.; Godfrey, M. J.; Dawson, P.; Oliver, R. A.; Galtrey, M. J.; Kappers, M. J.; Humphreys, C. J.
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