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Ruixuan Peng

Tsinghua University

H指数:8

被引数:486

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All-two-dimensional; ion-gating synaptic transistors for high-temperature and ultralow-energy-consumption neuromorphic applications

全二维离子门控突触晶体管用于高温和超低能耗神经形态应用

Science Advances

IF12.5

2026-07-100

OA

All-Solid-State, Ferroelectric-Graded-Doping Reconfigurable Molybdenum Ditelluride Devices

全固态、铁电梯度掺杂可重构二碲化钼器件

Advanced Materials

IF26.8

2026-05-090

PRE

Bioinspired gas-receptor synergistic interaction for high-performance two-dimensional neuromorphic devices

仿生气体受体协同作用用于高性能二维类脑器件

IF17.5

2025-04-010

PRE

High-Performance 2D Ambipolar MoTe2 Lateral Memristors by Mild Oxidation

通过轻度氧化实现的高性能2D双极MoTe2横向忆阻器

IF12.1

2024-07-030

PRE

Programmable graded doping for reconfigurable molybdenum ditelluride devices

可重构二碲化钼器件的可编程分级掺杂

NATURE ELECTRONICS

IF40.9

2023-11-1329

PRE

CuInP2S6-Based Electronic/Optoelectronic Synapse for Artificial Visual System Application

用于人工视觉系统应用的CuInP2S6-Based电子/光电突触

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-09-1925

OA

Abnormal Out-of-Plane Vibrational Raman Mode in Electrochemically Intercalated Multilayer MoS2

IF9.1

2023-05-2322

PRE

Perforated Carbon Nanotube Film Assisted Growth of Uniform Monolayer MoS2

穿孔碳纳米管薄膜辅助生长均匀单层MoS2

IF12.1

2023-03-032

PRE

All-Transfer Electrode Interface Engineering Toward Harsh-Environment-Resistant MoS2 Field-Effect Transistors

ADVANCED MATERIALS

IF26.8

2023-02-1713

PRE

Humidity-Controlled Dynamic Engineering of Buckling Dimensionality in MoS2 Thin Films

IF16

2022-09-028

PRE

Monolayer MoS2 Synaptic Transistors for High-Temperature Neuromorphic Applications

用于高温神经形态应用的单层MoS2突触晶体管

IF9.1

2021-12-0666

PRE

Reconfigurable Carbon Nanotube Barristor

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-10-228

PREAI

Ultrafast, Kinetically Limited, Ambient Synthesis of Vanadium Dioxides through Laser Direct Writing on Ultrathin Chalcogenide Matrix

IF16

2021-05-1924

PREAI