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Frank Schwierz

Technische Universitat Ilmenau

35H指数
201论文数
1.0W被引数
收录论文 20
发表时间
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Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems
errAPPLIED PHYSICS REVIEWS
IF11.6
err2024-08-19
err0
errOAAI
errLiou, Juin J.; Ziegler, Martin; Schwierz, Frank
err分享
err收藏
Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation通过氧积累在其介电界面处具有扩大的范德华间隙的二硫化钼晶体管
errNATURE ELECTRONICS
IF40.9
err2022-12-05
err95
PREAI
errLuo, Pengfei; Liu, Chang; Lin, Jun; Duan, Xinpei; Zhang, Wujun; Ma, Chao; Lv, Yawei; Zou, Xuming; Liu, Yuan; Schwierz, Frank; Qin, Wenjing; Liao, Lei; He, Jun; Liu, Xingqiang
err分享
err收藏
Vertical current transport processes in MOS-HEMT heterostructures
errAPPLIED SURFACE SCIENCE
IF6.9
err2020-10-01
err0
PREAI
errRacko, Juraj; Lalinsky, Tibor; Mikolasek, Miroslav; Benko, Peter; Thiele, Sebastian; Schwierz, Frank; Breza, Juraj
err分享
err收藏
Boron nitride switches for 5G and beyond
errNATURE ELECTRONICS
IF40.9
err2020-07-17
err4
PREAI
errSchwierz, Frank
err分享
err收藏
Insulators for 2D nanoelectronics: the gap to bridge用于2D纳米电子学的绝缘体: 桥接的间隙
errNATURE COMMUNICATIONS
IF15.7
err2020-07-07
err315
errOAAI
errIllarionov, Yury Yu.; Knobloch, Theresia; Jech, Markus; Lanza, Mario; Akinwande, Deji; Vexler, Mikhail I.; Mueller, Thomas; Lemme, Max C.; Fiori, Gianluca; Schwierz, Frank; Grasser, Tibor
err分享
err收藏
Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling基于陷阱辅助隧穿的12-EXT模型模拟金属/GaN/AlGaN异质结构的真实i-v特性
errAPPLIED SURFACE SCIENCE
IF6.9
err2017-02-01
err5
PREAI
errRacko, Juraj; Benko, Peter; Mikolasek, Miroslav; Granzner, Ralf; Kittler, Mario; Schwierz, Frank; Harmatha, Ladislav; Breza, Juraj
err分享
err收藏
Planar nanowire transistors from two-dimensional materials
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2016-02-01
err1
PREAI
errHaehnlein, B.; Alsioufy, M. A.; Lootze, M.; Jacobs, H. O.; Schwierz, F.; Pezoldt, J.
err分享
err收藏
Two-dimensional materials and their prospects in transistor electronics
errNANOSCALE
IF5.1
err2015-01-01
err625
errOAAI
errSchwierz, F.; Pezoldt, J.; Granzner, R.
err分享
err收藏
A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times
errAPPLIED SURFACE SCIENCE
IF6.9
err2014-09-01
err8
PREAI
errRacko, Juraj; Benko, Peter; Hotovy, Ivan; Harmatha, Ladislav; Mikolasek, Miroslav; Granzner, Ralf; Kittler, Mario; Schwierz, Frank; Breza, Juraj
err分享
err收藏
Two-dimensional materials for electronic applications
errMRS BULLETIN
IF4.9
err2014-08-14
err117
PREAI
errLemme, Max C.; Li, Lain-Jong; Palacios, Tomas; Schwierz, Frank
err分享
err收藏
Electrical gating and rectification in graphene three-terminal junctions
errAPPLIED SURFACE SCIENCE
IF6.9
err2014-02-01
err13
PREAI
errHaendel, B.; Haehnlein, B.; Goeckeritz, R.; Schwierz, F.; Pezoldt, J.
err分享
err收藏
Graphene Transistors: Status, Prospects, and Problems
errPROCEEDINGS OF THE IEEE
IF25.9
err2013-07-01
err435
PREAI
errSchwierz, Frank
err分享
err收藏
Side-gate graphene field-effect transistors with high transconductance
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-08-27
err39
PREAI
errHaehnlein, B.; Haendel, B.; Pezoldt, J.; Toepfer, H.; Granzner, R.; Schwierz, F.
err分享
err收藏
Epitaxial graphene three-terminal junctions
errAPPLIED PHYSICS LETTERS
IF3.6
err2011-10-28
err21
PREAI
errGoeckeritz, Robert; Pezoldt, Joerg; Schwierz, Frank
err分享
err收藏
NANOELECTRONICS Flat transistors get off the ground
errNATURE NANOTECHNOLOGY
IF34.9
err2011-03-04
err73
errOAAI
errSchwierz, Frank
err分享
err收藏
Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C-SiC (001)
errAPPLIED PHYSICS LETTERS
IF3.6
err2010-06-21
err23
PREAI
errTschumak, E.; Granzner, R.; Lindner, J. K. N.; Schwierz, F.; Lischka, K.; Nagasawa, H.; Abe, M.; As, D. J.
err分享
err收藏
Graphene transistors石墨烯晶体管
errNATURE NANOTECHNOLOGY
IF34.9
err2010-05-30
err5.2K
PREAI
errSchwierz, Frank
err分享
err收藏
Low-field and high-field electron transport in zinc blende InN
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-01-12
err45
PREAI
errPolyakov, V. M.; Schwierz, F.; Fuchs, F.; Furthmueller, J.; Bechstedt, F.
err分享
err收藏
Reduced surface electron accumulation at InN films by ozone induced oxidation
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-04-10
err38
PREAI
errCimalla, V.; Lebedev, V.; Wang, Ch. Y.; Ali, M.; Ecke, G.; Polyakov, V. M.; Schwierz, F.; Ambacher, O.; Lu, H.; Schaff, W. J.
err分享
err收藏
Low-field electron mobility in wurtzite InN
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-01-17
err210
errOAAI
errPolyakov, VM; Schwierz, F
err分享
err收藏

研究方向

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