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收藏Set-Triggered-Parallel-Reset Memristor Logic for High-Density Heterogeneous-Integration Friendly Normally Off Applications
Chang, Meng-Fan; Yang, Shu-Meng; Kuo, Chia-Chen; Yang, Ting-Chin; Yeh, Che-Ju; Chien, Tun-Fei; Huang, Li-Yue; Sheu, Shyh-Shyuan; Tseng, Pei-Ling; Chen, Yu-Sheng; Chen, Frederick T.; Ku, Tzu-Kun; Tsai, Ming-Jinn; Kao, Ming-Jer
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收藏Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren
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收藏Reduction in critical current density for spin torque transfer switching with composite free layer
Yen, Cheng-Tyng; Chen, Wei-Chuan; Wang, Ding-Yeong; Lee, Yuan-Jen; Shen, Chih-Ta; Yang, Shan-Yi; Tsai, Ching-Hsiang; Hung, Chien-Chung; Shen, Kuei-Hung; Tsai, Ming-Jinn; Kao, Ming-Jer
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收藏Impact of incomplete set programing on the performance of phase change memory cell
Chao, Der-Sheng; Lien, Chenhsin; Lee, Chain-Ming; Chen, Yin-Chan; Yeh, Jyi-Tyan; Chen, Fred; Chen, Ming-Jung; Yen, Philip H.; Kao, Ming-Jer; Tsai, Ming-Jinn
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收藏Improvement switching characteristics of toggle magnetic random access memory with dual polarity write pulse scheme
Lee, Yuan-Jen; hung, Chien-C Hung; Wang, Ding-Yeong; Yen, Cheng-Tyng; Chen, Wei-Chuan; Yang, Shan-Yi; Shen, Kuei-Hung; Wang, Yung-Hung; Chen, Yung-Hsiang; Kao, Ming-Jer; Tsai, Ming-Jinn
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收藏Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme
Hung, CC; Lee, YJ; Kao, MJ; Wang, YH; Huang, RF; Chen, WC; Chen, YSY; Shen, KH; Tsai, MJ; Lin, WC; Tang, DDL; Chao, S
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