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Wen-Zhang Zhu

Xiamen University of Technology

H指数:23

被引数:1,652

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Substrate temperature effects on PEALD HfAlO dielectric films for IGZO-TFT applications

APPLIED SURFACE SCIENCE

IF6.9

2024-08-015

PRE

Sputtered Sn-doped Ga 2 O 3 films under balance controlled of energy supply and ion bombardment for solar-blind detection application

IF3.9

2024-07-017

PRE

Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance

JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES

IF6.8

2024-06-013

OAAI

Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering

高功率冲动磁控溅射过程中工艺压力对氧化铜薄膜晶相的控制

JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES

IF6.8

2024-06-010

OAAI

The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process

通过两步沉积压力工艺制造的氧化物薄膜晶体管的增强性能

IF4.3

2024-04-172

OAAI

Cu-doped lithium oxide films with high mobility and bandgap prepared by pulsed direct-current sputtering

脉冲直流溅射制备高迁移率和带隙的Cu掺杂氧化锂薄膜

IF3.9

2024-04-014

PRE

PEALD deposited aluminum hafnium mixed oxide dielectrics for amorphous-IGZO TFTs

用于非晶IGZO tft的PEALD沉积铝铪混合氧化物电介质

CERAMICS INTERNATIONAL

IF5.6

2024-02-013

PRE

Effect of AlN/GaN supercycle ratio on properties of AlxGa1_xN films using super-cycle plasma enhanced atomic layer deposition

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-01-011

OAAI

Plasma power effect on crystallinity and density of AlN films deposited by plasma enhanced atomic layer deposition

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T

IF6.6

2023-11-013

OA

Two-regime property dependence on plasma power of plasma-enhanced atomic layer-deposited In2O3 thin films and underlying mechanism

IF3.9

2023-10-013

PRE

Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2023-08-0113

PRE

Effect of oxygen flow ratio on the performance of RF magnetron sputtered Sn-doped Ga2O3 films and ultraviolet photodetector

CERAMICS INTERNATIONAL

IF5.6

2023-04-0126

PRE

Effect of Bi3+ions on the enhanced luminescent properties of novel red-emitting Sr3Ga2Ge4O14: Eu3+phosphors

Bi3离子对新型红光Sr3Ga2Ge4O14: Eu3荧光粉增强发光性能的影响

OPTICAL MATERIALS

IF4.2

2023-03-013

PRE

Modulation of carrier density in indium-gallium-zinc-oxide thin film prepared by high-power impulse magnetron sputtering

IF3.9

2023-01-0116

PRE

Modulation of the conductive behavior of NiO thin film deposited by HiPIMS through varying the O2 flow ratio

CERAMICS INTERNATIONAL

IF5.6

2022-12-015

PRE

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

不同衬底温度下等离子体增强原子层沉积氮化镓薄膜的沉积机理与性能

IF4.6

2022-11-225

OAAI

Texture evolution mechanism of pulsed laser deposited in-doped Ga2O3 film affected by laser fluence and its application in solar-blind photodetector

IF3.9

2022-11-019

PRE

Deposition Mechanism and Characterization of Plasma-Enhanced Atomic Layer-Deposited SnOx Films at Different Substrate Temperatures

不同衬底温度下等离子体增强原子层沉积SnOx薄膜的沉积机理及表征

IF4.3

2022-08-194

OAAI

Oxygen annealing induced crystallization and cracking of pulsed laser deposited Ga2O3 films

脉冲激光沉积Ga2O3薄膜的氧退火诱导结晶和开裂

IF3.9

2022-08-0127

PRE

Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films

JOURNAL OF MATERIALS SCIENCE

IF3.9

2022-06-304

PRE