H. Asahi - Publications, H-index & Citations

H. Asahi

the university of osaka

37H指数

408论文数

5.0K被引数

收录论文 30

发表时间

Photoluminescence enhancement associated with the small size of GaN nanorods

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2022-02-01

PREAI

Almokhtar, Mohamed; All, Naglaa Abdel; Almarashi, Jamal Q. M.; Asahi, Hajime

Isotopic Heft on the B1/ Silent Mode in Ultra-Narrow Gallium Nitride Nanowires

NANO LETTERS

IF9.1

2018-07-25

PREAI

Rodriguez-Fernandez, Carlos; Almokhtar, Mohammed; Ibarra-Hernandez, Wilfredo; de Lima, Mauricio Morais, Jr.; Romero, Aldo H.; Asahi, Hajime; Cantarero, Andres

Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2015-04-01

PREAI

Almokhtar, Mohamed; Emura, Shuichi; Koide, Akihiro; Fujikawa, Takashi; Asahi, Hajime

Effects of growth temperature on nitrogen incorporation into InGaPN epilayer and its optical properties

CERAMICS INTERNATIONAL

IF5.6

2014-01-01

PREAI

Kim, Kang Min; Hasegawa, Shigehiko; Asahi, Hajime; Ryu, Jeong Ho

Suppression of vacancy aggregation by silicon-doping in low-temperature-grown Ga1-xCrxN

APPLIED PHYSICS LETTERS

IF3.6

2013-04-08

PREAI

Yabuuchi, A.; Maekawa, M.; Kawasuso, A.; Zhou, Y. -K.; Hasegawa, S.; Asahi, H.

Rare-earth doped III-nitride semiconductors for semiconductor spintronics

JOURNAL OF LUMINESCENCE

IF3.6

2012-12-01

PREAI

Asahi, Hajime; Hasegawa, Shigehiko; Zhou, Yi-Kai; Emura, Shuichi

Coherent growth of GaGdN layers with high Gd concentration on GaN(0001)

APPLIED PHYSICS LETTERS

IF3.6

2012-11-26

PREAI

Higashi, K.; Hasegawa, S.; Abe, D.; Mitsuno, Y.; Komori, S.; Ishikawa, F.; Ishimaru, M.; Asahi, H.

Strong atomic ordering in Gd-doped GaN

APPLIED PHYSICS LETTERS

IF3.6

2012-09-07

OAAI

Ishimaru, Manabu; Higashi, Kotaro; Hasegawa, Shigehiko; Asahi, Hajime; Sato, Kazuhisa; Konno, Toyohiko J.

Surface morphology and crystalline structure of high-stable polycrystalline transparent conductive zinc oxide films

APPLIED SURFACE SCIENCE

IF6.9

2011-12-01

PREAI

Kuchiyama, Takashi; Yamamoto, Kenji; Hasegawa, Shigehiko; Asahi, Hajime

Ultra-low turn-on field from ultra-long ZnO nanowire arrays emitters

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2010-02-01

PREAI

Meng, Gang; Fang, Xiaodong; Zhou, Yikai; Seo, JongUk; Dong, Weiwei; Hasegawa, Shigehiko; Asahi, Hajime; Tambo, Hiroyuki; Kong, Mingguang; Li, Liang

Growth and characterization of Fe nanostructures on GaN

APPLIED SURFACE SCIENCE

IF6.9

2009-11-01

PREAI

Honda, Yuya; Hayakawa, Satoko; Hasegawa, Shigehiko; Asahi, Hajime

Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

APPLIED PHYSICS LETTERS

IF3.6

2009-04-14

PREAI

Ishimaru, Manabu; Tanaka, Yuusuke; Hasegawa, Shigehiko; Asahi, Hajime; Sato, Kazuhisa; Konno, Toyohiko J.

Electronic structure of Ga1-xCrxN and Si-doping effects studied by photoemission and x-ray absorption spectroscopy

PHYSICAL REVIEW B

IF3.7

2008-07-17

OAAI

Song, G. S.; Kobayashi, M.; Hwang, J. I.; Kataoka, T.; Takizawa, M.; Fujimori, A.; Ohkouchi, T.; Takeda, Y.; Okane, T.; Saitoh, Y.; Yamagami, H.; Chang, F. -H.; Lee, L.; Lin, H. -J.; Huang, D. J.; Chen, C. T.; Kimura, S.; Funakoshi, M.; Hasegawa, S.; Asahi, H.

Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures

APPLIED PHYSICS LETTERS

IF3.6

2008-02-12

PREAI

Zhou, Yi Kai; Choi, Sung Woo; Emura, Shuichi; Hasegawa, Shigehiko; Asahi, Hajime

Tunnel magnetoresistance in GaCrN/AlN/GaCrN ferromagnetic semiconductor tunnel junctions

APPLIED PHYSICS LETTERS

IF3.6

2006-12-07

PREAI

Kim, Moo-Seong; Zhou, Yi-Kai; Funakoshi, Masayuki; Emura, Shuichi; Hasegawa, Shigehiko; Asahi, Hajime