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V

V. Rajagopal Reddy

sri venkateswara university

33H指数
241论文数
3.9K被引数
收录论文 63
发表时间
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Electrical and photodiode possessions of the Au/V2O5/un-InP MIS-type photodiode under different illumination light intensitiesAu/V2O5/un-InP MIS型光电二极管的电学与光敏特性在不同光照强度下的表现
errMaterials Science and Engineering: B
IF0
err2025-10-18
err0
PREAI
errD. Surya Reddy; A. Ashok Kumar; V. Rajagopal Reddy
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Using Highly Functional Cr2O3 Interfacial Layer to Enhance the Electrical Performance of Au/InP Schottky Diodes采用高功能性的Cr₂O₃界面层来增强Au/InP肖特基二极管的电学性能
errADVANCED ELECTRONIC MATERIALS
IF5.3
err2025-05-01
err0
errOAAI
errKrupa, SGS; Reddy, DS; Lakshmi-Narayana, A; Reddy, VR; Ramana, CV
err分享
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Temperature-dependent current conduction properties and barrier inhomogeneity of Au/methylene blue (MB)/n-Ge heterostructure温度依赖的电流传导特性和势垒不均匀性：Au/亚甲基蓝（MB）/n-Ge异质结构
errJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
IF2.8
err2025-04-14
err0
PREAI
errMallikarjuna, D.; Kumar, A. Ashok; Janardhanam, V.; Reddy, V. Rajagopal
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Microstructural and chemical properties of high-k holmium oxide (Ho2O3) and its effect on interface properties and current transport process of Au/n-GaN/Ti/Al Schottky contact as an interlayer
errVACUUM
IF3.9
err2025-01-01
err1
PREAI
errReddy, D. Surya; Reddy, V. Rajagopal; Janardhanam, V.; Choi, Chel-Jong
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Digital etching of AlGaN/GaN heterostructures with GaN cap using inductively coupled oxygen plasma process combined with wet chemical treatment
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-10-01
err0
PREAI
errKim, Jong-Hee; Kim, Hyeon-Cheol; Jeong, Hyeon-Yeong; Janardhanam, V; Kumar, A. Ashok; Reddy, V. Rajagopal; Choi, Chel-Jong
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Structural, chemical, optical, electrical and photodiode properties of Au/ ZnPc/undoped-InP MPS-type diode using a ZnPc interlayer使用ZnPc中间层的Au/ ZnPc/未掺杂-InP MPS型二极管的结构，化学，光学，电学和光电二极管特性
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2024-07-01
err6
PREAI
errRani, A. Usha; Reddy, D. Surya; Kumar, A. Ashok; Reddy, V. Rajagopal
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Chemical States, Structural, Electrical and Current Phenomenon Properties of a Au/Cobalt Phthalocyanine/Undoped-InP MPS-Type Diode with a CoPc Interlayer
errJOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS
IF4.9
err2024-04-11
err3
PREAI
errRani, A. Usha; Reddy, V. Rajagopal; Prasad, C. Venkata; Kumar, A. Ashok
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Dysprosium oxide (Dy2O3) layer effect on the interface possessions of Au/ n-GaN Schottky diode as an interlayer and its chemical and microstructural features氧化镝 (Dy2O3) 层对作为中间层的Au/n-gan肖特基二极管的界面占有的影响及其化学和微观结构特征
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-04-01
err5
PREAI
errReddy, D. Surya; Reddy, V. Rajagopal; Choi, Chel-Jong
err分享
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Optical, morphological and electrical properties of rapid thermally annealed CoPc/n-Ge heterostructures for photodiode applications
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2024-02-01
err2
PREAI
errPavani, M.; Kumar, A. Ashok; Reddy, V. Rajagopal; Kaleemulla, S.; Jyothi, I.; Choi, Chel-Jong
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Chemical states and electrical features of Ti/CaTiO3 (CT)/p-InP MIS-type Schottky diode with a high-k CT interlayer具有高k CT中间层的Ti/CaTiO3 (CT)/p-inp MIS型肖特基二极管的化学态和电学特性
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-01-01
err6
PREAI
errKrupa, S. Sai; Reddy, V. Rajagopal; Choi, Chel-Jong
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Exploration of microstructural, chemical states and electrical features of the Au/Er2O3/n-GaN MIS diode with a Er2O3 interlayer
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2023-12-01
err4
PREAI
errReddy, D. Surya; Reddy, V. Rajagopal; Choi, Chel-Jong
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Annealing temperature effect on structural, electronic features and current transport process of Au/CoPc/undoped-InP MPS-type Schottky structure
errJOURNAL OF MOLECULAR STRUCTURE
IF4.7
err2023-12-01
err8
PREAI
errReddy, V. Rajagopal; Rani, A. Usha; Ashajyothi, S.; Reddy, D. Surya; Kumar, A. Ashok
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Modification of interface properties of Au/n-GaN Schottky junction by rare-earth oxide Nd2O3 as an interlayer and its microstructural characterization
errVACUUM
IF3.9
err2023-09-01
err10
PREAI
errReddy, D. Surya; Janardhanam, V.; Reddy, V. Rajagopal; Choi, Chel-Jong
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Broadband photodetector based on MoS2/Ge heterojunction for optoelectronic applications
errVACUUM
IF3.9
err2023-03-01
err17
PREAI
errZumuukhorol, M.; Khurelbaatar, Z.; Kim, Dong-Ho; Shim, Kyu-Hwan; Janardhanam, V.; Reddy, V. Rajagopal; Choi, Chel-Jong
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Microstructural and interface properties of Au/SrTiO3 (STO)/n-GaN heterojunction with an e-beam evaporated high-k STO interlayer
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2020-05-01
err15
PREAI
errReddy, V. Rajagopal; Choi, Chel-Jong
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Electrical and carrier transport properties of Au/Pr6O11/n-GaN MIS structure with a high-k rare-earth oxide interlayer at high temperature range
errVACUUM
IF3.9
err2020-04-01
err13
PREAI
errUma, M.; Reddy, M. Siva Pratap; Reddy, K. Ravindranatha; Reddy, V. Rajagopal
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Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes
errMATERIALS
IF3.2
err2020-03-13
err4
errOAAI
errKumar, Santosh; Zhang, Xiang; Mariswamy, Vinay Kumar; Reddy, Varra Rajagopal; Kandasami, Asokan; Nimmala, Arun; Rao, S. V. S. Nageswara; Tang, Jue; Ramakrishnna, Seeram; Sannathammegowda, Krishnaveni
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Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier dioden型 (001) β-Ga2O3肖特基势垒二极管上Ni/Au的温度依赖性肖特基势垒参数
errVACUUM
IF3.9
err2020-01-01
err70
PREAI
errReddy, P. R. Sekhar; Janardhanam, V.; Shim, Kyu-Hwan; Reddy, V. Rajagopal; Lee, Sung-Nam; Park, Se-Jeong; Choi, Chel-Jong
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Chemical, electrical and carrier transport properties of Au/cytosine/undoped-InP MPS junction with a cytosine polymer
errSOLID STATE SCIENCES
IF3.3
err2019-11-01
err9
PREAI
errReddy, V. Rajagopal; Prasad, C. Venkata; Reddy, K. Ravindranatha
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Microstructural, chemical and electrical characteristics of Au/magnetite (Fe3O4)/n-GaN MIS junction with a magnetite interlayer
errVACUUM
IF3.9
err2019-06-01
err17
PREAI
errReddy, V. Rajagopal; Choi, Chel-Jong
err分享
err收藏

研究方向

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合作期刊
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Ch. Venkata Reddy
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