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H

Habibe Uslu

Karabuk University

25H指数
40论文数
1.5K被引数
收录论文 12
发表时间
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Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
errMATERIALS TODAY COMMUNICATIONS
IF4.5
err2023-06-01
err16
PREAI
errKaymaz, Ahmet; Baydilli, Esra Evcin; Tecimer, Hueseyin; Tecimer, Habibe Uslu; Altindal, Semsettin
err分享
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Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes
errPOLYMER BULLETIN
IF4
err2018-01-11
err20
PREAI
errTecimer, Habibe Uslu; Alper, M. A.; Tecimer, H.; Tan, S. O.; Altindal, S.
err分享
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Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures
errCOMPOSITES PART B-ENGINEERING
IF14.2
err2017-03-01
err63
PREAI
errCicek, O.; Tecimer, H. Uslu; Tan, S. O.; Tecimer, H.; Orak, I.; Altindal, S.
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Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions
errCOMPOSITES PART B-ENGINEERING
IF14.2
err2016-08-01
err74
PREAI
errCicek, O.; Tecimer, H. Uslu; Tan, S. O.; Tecimer, H.; Altindal, S.; Uslu, I.
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On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)
errCOMPOSITES PART B-ENGINEERING
IF14.2
err2014-02-01
err82
PREAI
errTecimer, H.; Uslu, H.; Alahmed, Z. A.; Yakuphanoglu, F.; Altindal, S.
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Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)Au/(Zn掺杂) PVA/n-gaas肖特基势垒二极管 (sbd) 中的温度相关电流传输机制
errSENSORS AND ACTUATORS A-PHYSICAL
IF4.9
err2013-09-01
err72
PREAI
errTecimer, H.; Turut, A.; Uslu, H.; Altindal, S.; Uslu, I.
err分享
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Schottky diode properties of CuInSe2 films prepared by a two-step growth technique
errSENSORS AND ACTUATORS A-PHYSICAL
IF4.9
err2012-10-01
err36
PREAI
errTecimer, H.; Aksu, S.; Uslu, H.; Atasoy, Y.; Bacaksiz, E.; Altindal, S.
err分享
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Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer具有PVA(Ni，Zn掺杂) 界面层的Au/n-si (1) 肖特基势垒二极管的温度相关电流-电压 (i-v) 特性
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2011-06-01
err55
PREAI
errTunc, Tuncay; Altindal, Semsettin; Uslu, Ibrahim; Dokme, Ilbilge; Uslu, Habibe
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On the mechanism of current-transport in Cu/CdS/SnO2/In-Ga structures
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2011-05-01
err48
PREAI
errUslu, Habibe; Altindal, Semsettin; Polat, Ismail; Bayrak, Hatice; Bacaksiz, Emin
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Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2011-02-01
err15
PREAI
errBengi, A.; Uslu, H.; Asar, T.; Altindal, S.; Cetin, S. S.; Mammadov, T. S.; Ozcelik, S.
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Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2010-09-01
err49
PREAI
errUslu, H.; Bengi, A.; Cetin, S. S.; Aydemir, U.; Altindal, S.; Aghaliyeva, S. T.; Ozcelik, S.
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The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/ω-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2010-07-01
err52
PREAI
errUslu, H.; Altindal, S.; Aydemir, U.; Dokme, I.; Afandiyeva, I. M.
err分享
err收藏

研究方向

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合作学者
合作期刊
Ş
Ş. Altındal
H 指数: 62 · 论文数: 410
A
A. Türüt
H 指数: 56 · 论文数: 308
S
Süleyman Özçelik
H 指数: 37 · 论文数: 285
E
E. Bacaksız
H 指数: 35 · 论文数: 156
İ
İkram Orak
H 指数: 28 · 论文数: 111
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