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D
D. N. Bose
xlri -xavier school of management
24
H指数
261
论文数
2.4K
被引数
0
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15
发表时间
发表时间
IF
被引数
Supplier Capability Signaling Through Investment in Quality Improvement: Roles of Cost of Quality and Inequity Aversion
通过质量改进投资传递供应商能力信号:质量成本和不平等规避的作用
Decision Analysis
IF
0
2026-01-01
0
PRE
AI
Bose, Dipankar; Sarkar, Sumit
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Economic production lot sizing under imperfect quality, on-line inspection, and inspection errors: Full vs. sampling inspection
COMPUTERS & INDUSTRIAL ENGINEERING
IF
6.5
2021-10-01
20
PRE
AI
Bose, Dipankar; Guha, Apratim
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A note on Economic production quantity in batch manufacturing with imperfect quality, imperfect inspection, and destructive and non-destructive acceptance sampling in a two-tier market
COMPUTERS & INDUSTRIAL ENGINEERING
IF
6.5
2020-08-01
8
PRE
AI
Guha, Apratim; Bose, Dipankar
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Assessment of residential institute foodservice using Kano categorization and importance-performance analysis
使用Kano分类和重要性绩效分析对住宅机构的餐饮服务进行评估
TQM JOURNAL
IF
4.4
2020-05-05
12
PRE
AI
Roy, Aayush Singha; Bose, Dipankar; Bera, U. K.
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Fabrication and characterization of GaAs MIS devices with N-rich PECVD SixNy dielectric
APPLIED SURFACE SCIENCE
IF
6.9
2001-09-01
29
PRE
AI
Pal, S; Bose, DN
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Photoconductivity, low-temperature conductivity, and magnetoresistance studies on the layered semiconductor GaTe
PHYSICAL REVIEW B
IF
3.7
2001-05-31
33
PRE
AI
Bose, DN; Pal, S
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Study of aluminum and gold as the gate electrode material on silicon nitride based MIS devices
APPLIED SURFACE SCIENCE
IF
6.9
2001-02-01
7
PRE
AI
Bose, M; Basa, DK; Bose, DN
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Study of nitrous oxide plasma oxidation of silicon nitride thin films
APPLIED SURFACE SCIENCE
IF
6.9
2000-05-01
10
PRE
AI
Bose, M; Basa, DK; Bose, DN
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Determination of well widths in a MOVPE-grown InGaAs/InP multi-quantum well structure using SIMS and photoluminescence
使用SIMS和光致发光确定MOVPE生长的InGaAs/InP多量子阱结构中的阱宽度
APPLIED SURFACE SCIENCE
IF
6.9
2000-05-01
14
PRE
AI
Bose, DN; Banerji, P; Bhunia, S; Aparna, Y; Chhetri, MB; Chakraborty, BR
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Neural network modeling of PECVD silicon nitride films
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
1999-04-01
22
PRE
AI
Ghosh, S; Dutta, PK; Bose, DN
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Effective techniques for reduction of silicon impurity in chloride vapor phase epitaxial growth of GaInAs
MATERIALS RESEARCH BULLETIN
IF
5.7
1998-02-01
0
PRE
AI
Pal, R; Dhaul, A; Agarwal, SK; Pal, D; Bose, DN
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Double crystal X-ray diffraction studies on chloride-VPE grown GaXIn1-XAs layers with different Ga-to-In ratio
MATERIALS RESEARCH BULLETIN
IF
5.7
1997-05-01
3
PRE
AI
Pal, R; Agarwal, SK; Pal, D; Bose, DN
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Strong photoluminescence in ammonia plasma treated amorphous-SiC thin films deposited by laser ablation
APPLIED PHYSICS LETTERS
IF
3.6
1996-05-20
17
OA
AI
Ghosh, S; Bhattacharya, P; Bose, DN
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Ruthenium and sulphide passivation of GaAs
APPLIED SURFACE SCIENCE
IF
6.9
1996-01-01
13
PRE
AI
Ali, ST; Ghosh, S; Bose, DN
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ELECTRONIC CONDUCTIVITY OF AGI USING DC POLARIZATION AND CHARGE-TRANSFER TECHNIQUES
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
IF
4.9
1982-01-01
17
PRE
AI
MAZUMDAR, D; GOVINDACHARYULU, PA; BOSE, DN
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研究方向
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合作学者
合作期刊
P
P. Banerji
H 指数: 31 · 论文数: 214
D
Dipanjan Mazumdar
H 指数: 29 · 论文数: 139
S
Sandip Ghosh
H 指数: 24 · 论文数: 203
U
Uttam Kumar Bera
H 指数: 23 · 论文数: 134
S
Sumit Sarkar
H 指数: 16 · 论文数: 108
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