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S

Sudakar Singh Chauhan

ece department

13H指数
80论文数
655被引数
收录论文 8
发表时间
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Advancements in Tunnel Field-Effect Transistors: Material Innovations, Emerging Applications and Future Perspectives隧穿场效应晶体管的研究进展：材料创新、新兴应用及未来展望
errSilicon
IF3.3
err2025-07-18
err0
PREAI
errSeema Narwal; Preeti Yadav; Dimple Saproo; Ravinder Kumar; Sudakar Singh Chauhan; Rajiv Kumar
err分享
err收藏
Sensitivity Enhancement of SPR Sensor with Si/Perovskite heterostructure for Early Detection of Malaria
errPLASMONICS
IF4.3
err2025-02-12
err3
PREAI
errShivangani, Anupam; Sahu, Anupam; Kumar, Dharmendra; Verma, Sudhanshu; Chauhan, Sudakar Singh; Kumar, Santosh
err分享
err收藏
Optical performances of (Au,Sn,I) adsorbed phosphorene nanostructures with improved absorption in visible region: a comparative computational study
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2024-01-27
err0
PREAI
errSingh, Priyanka; Chauhan, Sudakar Singh; Verma, Gaurav
err分享
err收藏
Secrecy analysis of alamouti scheme using feedback-rate efficient transmit antenna selection with robust error performance in the presence of feedback errors
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2018-11-01
err1
PREAI
errKumar, Rajiv; Chauhan, Sudakar Singh
err分享
err收藏
A new design approach to improve DC, analog/RF and linearity metrics of Vertical TFET for RFIC design
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2018-10-01
err13
PREAI
errSeema; Chauhan, Sudakar Singh
err分享
err收藏
Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation基于HDB的双栅垂直隧道场效应晶体管设计及其性能评估
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2018-05-01
err25
PREAI
errSeema; Chauhan, Sudakar Singh
err分享
err收藏
Secrecy analysis of MRT/RAS system under Nakagami-m fading channels in the presence of imperfect channel state information
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2018-02-01
err8
PREAI
errKumar, Rajiv; Chauhan, Sudakar Singh
err分享
err收藏
Enhancing analog performance and suppression of subthreshold swing using hetero-junctionless double gate TFETs使用无异结双栅tfet增强模拟性能并抑制亚阈值摆幅
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2017-12-01
err12
PREAI
errChauhan, Sudakar Singh; Sharma, Neha
err分享
err收藏

研究方向

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合作学者
合作期刊
S
Santosh Kumar
H 指数: 67 · 论文数: 724
R
Rajiv Kumar
H 指数: 56 · 论文数: 550
D
Dharmendra Kumar
H 指数: 23 · 论文数: 134
A
Anupam Sahu
H 指数: 12 · 论文数: 45
S
Sudhanshu Verma
H 指数: 9 · 论文数: 30
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