J. Misiewicz - Publications, H-index & Citations

J. Misiewicz

wroclaw university of science & technology

39H指数

700论文数

8.2K被引数

收录论文 187

发表时间

Critical dimension metrology using Raman spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2020-07-27

PREAI

Gawlik, Andrzej; Bogdanowicz, Janusz; Nuytten, Thomas; Charley, Anne-Laure; Teugels, Lieve; Misiewicz, Jan; Vandervorst, Wilfried

Sensitivity of N-polar GaN surface barrier to ambient gases (vol 281, pg 561, 2019)N极性GaN表面势垒对环境气体的敏感性 (体积281，pg 561，2019)

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2020-04-01

PREAI

Janicki, Lukasz; Misiewicz, Jan; Siekacz, Marcin; Turski, Henryk; Moneta, Joanna; Gorantla, Sandeep; Skierbiszewski, Czeslaw; Kudrawiec, Robert

Size-dependent optical properties of periodic arrays of semiconducting nanolines

OPTICS EXPRESS

IF3.3

2020-02-21

OAAI

Gawlik, Andrzej; Bogdanowicz, Janusz; Schulze, Andreas; Morin, Pierre; Misiewicz, Jan; Vandervorst, Wilfried

Sensitivity of N-polar GaN surface barrier to ambient gases N极性GaN表面势垒对环境气体的敏感性

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2019-02-01

OAAI

Janicki, Lukasz; Misiewicz, Jan; Siekacz, Marcin; Turski, Henryk; Moneta, Joanna; Gorantla, Sandeep; Skierbiszewski, Czeslaw; Kudrawiec, Robert

Enhanced light coupling into periodic arrays of nanoscale semiconducting fins

APPLIED PHYSICS LETTERS

IF3.6

2018-08-07

PREAI

Gawlik, Andrzej; Bogdanowicz, Janusz; Schulze, Andreas; Nuytten, Thomas; Tarnowski, Karol; Misiewicz, Jan; Vandervorst, Wilfried

Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

APPLIED PHYSICS LETTERS

IF3.6

2018-05-29

PREAI

Syperek, M.; Andrzejewski, J.; Rogowicz, E.; Misiewicz, J.; Bauer, S.; Sichkovskyi, V. I.; Reithmaier, J. P.; Sek, G.

Photonic engineering of highly linearly polarized quantum dot emission at telecommunication wavelengths

PHYSICAL REVIEW B

IF3.7

2018-04-20

PREAI

Mrowinski, P.; Emmerling, M.; Schneider, C.; Reithmaier, J. P.; Misiewicz, J.; Hoefling, S.; Sek, G.

Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot-quantum well structures emitting at telecom spectral range

APPLIED PHYSICS LETTERS

IF3.6

2018-01-29

PREAI

Rudno-Rudzinski, W.; Bieganska, D.; Misiewicz, J.; Lelarge, F.; Rousseau, B.; Sek, G.

Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures

PHYSICAL REVIEW B

IF3.7

2017-12-27

OAAI

Gawelczyk, M.; Syperek, M.; Marynski, A.; Mrowinski, P.; Dusanowski, L.; Gawarecki, K.; Misiewicz, J.; Somers, A.; Reithmaier, J. P.; Hofling, S.; Sek, G.

Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

APPLIED PHYSICS LETTERS

IF3.6

2017-12-20

OAAI

Dusanowski, L.; Mrowinski, P.; Syperek, M.; Misiewicz, J.; Somers, A.; Hoefling, S.; Reithmaier, J. P.; Sek, G.

Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot

OPTICS EXPRESS

IF3.3

2017-11-29

OAAI

Dusanowski, L.; Holewa, P.; Marynski, A.; Musial, A.; Heuser, T.; Srocka, N.; Quandt, D.; Strittmatter, A.; Rodt, S.; Misiewicz, J.; Reitzenstein, S.; Sek, G.

Influence of europium on structure modification of TiO2 thin films prepared by high energy magnetron sputtering process

SURFACE & COATINGS TECHNOLOGY

IF6.1

2017-06-01

PREAI

Wojcieszak, Damian; Mazur, Michal; Gibson, Des; Zatryb, Grzegorz; Kaczmarek, Danuta; Misiewicz, Jan

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

APPLIED PHYSICS LETTERS

IF3.6

2017-05-31

PREAI

Pieczarka, M.; Syperek, M.; Bieganska, D.; Gilfert, C.; Pavelescu, E. M.; Reithmaier, J. P.; Misiewicz, J.; Sek, G.

Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface

APPLIED SURFACE SCIENCE

IF6.9

2017-02-01

PREAI

Janicki, Lukasz; Gladysiewicz, Marta; Misiewicz, Jan; Klosek, Kamil; Sobanska, Marta; Kempisty, Pawel; Zytkiewicz, Zbigniew R.; Kudrawiec, Robert

Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells II型InAs/GaAsSb量子阱中受限态和局部态之间的载流子转移

OPTICAL AND QUANTUM ELECTRONICS

IF4

2017-01-16

OAAI

Dyksik, M.; Motyka, M.; Weih, R.; Hoefling, S.; Kamp, M.; Sek, G.; Misiewicz, J.

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

APPLIED PHYSICS LETTERS

IF3.6

2016-11-08

OAAI

Syperek, M.; Dusanowski, L.; Gawelczyk, M.; Sek, G.; Somers, A.; Reithmaier, J. P.; Hoefling, S.; Misiewicz, J.

Excitonic fine structure and binding energies of excitonic complexes in single InAs quantum dashes

PHYSICAL REVIEW B

IF3.7

2016-09-26

OAAI

Mrowinski, P.; Zielinski, M.; Swiderski, M.; Misiewicz, J.; Somers, A.; Reithmaier, J. P.; Hoefling, S.; Sek, G.

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

OPTICAL AND QUANTUM ELECTRONICS

IF4

2016-07-28

OAAI

Dyksik, M.; Motyka, M.; Kurka, M.; Ryczko, K.; Dallner, M.; Hoefling, S.; Kamp, M.; Sek, G.; Misiewicz, J.

Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-07-28

PREAI

Gladysiewicz, M.; Janicki, L.; Misiewicz, J.; Sobanska, M.; Klosek, K.; Zytkiewicz, Z. R.; Kudrawiec, R.

Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy

OPTICAL AND QUANTUM ELECTRONICS

IF4

2016-07-18

OAAI

Kozub, Michal A.; Motyka, Marcin; Dyksik, Mateusz; Sek, Grzegorz; Misiewicz, Jan; Nishisaka, Kazuichi; Maemoto, Toshihiko; Sasa, Shigehiko

研究方向