Mei Yang - Publications, H-index & Citations

杨梅 (Mei Yang)

north china university of science and technology

27H指数

116论文数

2.3K被引数

收录论文 55

发表时间

Phosphorus Removal by Concrete-Based Layered Double Hydroxides: Efficiency and Mechanism 基于混凝土的层状双金属氢氧化物的磷去除：效率与机制

Polish Journal of Environmental Studies

IF1.3

2026-05-01

PREAI

Feng, Tingjuan; Liu, Xiao; Li, Yang; Zhi, Yaze; Yang, Yong; Liu, Lin; Yang, Mei

Comparison of AlN/GaN heterojunctions grown by molecular beam epitaxy with Al and Ga assistance Al和Ga辅助分子束外延生长AlN/GaN异质结的比较

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-12-01

PREAI

Yang, Mei; Ye, Haibin; Wang, Yasen; Lu, Jiongqi; Ren, Weiyu; Li, Yifan; Zhang, Peng; Yang, Ling; Zhu, Qing; Cui, Nuanyang; Li, Chen; Xi, He; Mi, Minhan; Zhu, Jiejie; Ma, Xiaohua; Hao, Yue

Preoperative frailty tendency predicts delirium occurrence in older people undergoing spinal surgery

BMC GERIATRICS

IF3.8

2024-10-22

OAAI

Zhang, Yu; Zhang, Xiaochen; Qi, Peng; Lu, Jinfang; Yang, Mei

TiN hollow multishelled structure as separator modification material for enhanced lithium-sulfur battery performance

CHINESE SCIENCE BULLETIN-CHINESE

IF1.2

2023-11-10

PREAI

Xu, Wei; Bi, Ruyi; Yang, Mei; Wang, Jiangyan; Yu, Ranbo; Wang, Dan

Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity

APPLIED PHYSICS LETTERS

IF3.6

2023-03-14

PREAI

Yang, Yintang; Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Guo, Jingshu; Yang, Mei; Ma, Xiaohua

Biodegradable and flexible artificial nociceptor based on Mg/MgO threshold switching memristor 基于Mg/MgO阈值切换忆阻器的可生物降解柔性人工伤害性感受器

SCIENCE CHINA-MATERIALS

IF7.4

2023-01-04

OAAI

Cao, Yaxiong; Wang, Saisai; Wang, Rui; Xin, Yuhan; Peng, Yaqian; Sun, Jing; Yang, Mei; Ma, Xiaohua; Lv, Ling; Wang, Hong; Hao, Yue

Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM

APPLIED PHYSICS LETTERS

IF3.6

2022-08-16

PREAI

Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Sun, Yuxin; Wu, Shuliang; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang

The influence of device structure on resistance switching in PbS QDs film inserted RRAM

APPLIED PHYSICS LETTERS

IF3.6

2022-07-19

PREAI

Sun, Yuxin; Gao, Haixia; Wu, Shuliang; Duan, Yiwei; Qian, Mengyi; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang

In-depth understanding of physical mechanism of the gradual switching in AlOxNy-based RRAM as memory and synapse device

APPLIED PHYSICS LETTERS

IF3.6

2022-06-29

PREAI

Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Sun, Yuxin; Wu, Shuliang; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang

Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM

APPLIED PHYSICS LETTERS

IF3.6

2022-05-19

PREAI

Duan, Yiwei; Gao, Haixia; Qian, Mengyi; Sun, Yuxin; Wu, Shuliang; Guo, Jingshu; Yang, Mei; Ma, Xiaohua; Yang, Yintang

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

APPLIED PHYSICS LETTERS

IF3.6

2022-02-08

PREAI

Zhou, Yuwei; Mi, Minhan; Yang, Mei; Han, Yutong; Wang, Pengfei; Chen, Yilin; Liu, Jielong; Gong, Can; Lu, Yiwei; Zhang, Meng; Zhu, Qing; Ma, Xiaohua; Hao, Yue

Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM

APPLIED PHYSICS LETTERS

IF3.6

2021-01-04

PREAI

Duan, Yiwei; Gao, Haixia; Guo, Jingshu; Yang, Mei; Yu, Zhenxi; Shen, Xuping; Wu, Shuliang; Sun, Yuxin; Ma, Xiaohua; Yang, Yintang

Mechanically tough, healable hydrogels synergistically reinforced by UV-responsive crosslinker and metal coordination interaction for wound healing application

CHEMICAL ENGINEERING JOURNAL

IF13.2

2021-01-01

PREAI

Chen, Hong; Peng, Can; Wang, Lei; Li, Xiaoxia; Yang, Mei; Liu, Huanhuan; Qin, Haili; Chen, Weidong