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E

E. Cartier

international business machines (ibm)

54H指数
267论文数
1.2W被引数
收录论文 28
发表时间
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Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-03-04
err9
errOAAI
errSahiner, Mehmet Alper; Vander Valk, Rory J.; Steier, Joshua; Savastano, Jared; Kelty, Stephen; Ravel, Bruce; Woicik, Joseph C.; Ogawa, Yohei; Schmidt, Kristin; Cartier, Eduard A.; Jordan-Sweet, Jean L.; Lavoie, Christian; Frank, Martin M.
err分享
err收藏
A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-02-24
err4
PREAI
errWu, Ernest; Ando, Takashi; Kim, Youngseok; Muralidhar, Ramachandran; Cartier, Eduard; Jamison, Paul; Wang, Miaomiao; Narayanan, Vijay
err分享
err收藏
Interface state capture cross section measurements on vacuum annealed and radiation damaged Si:SiO2 surfaces
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2019-12-06
err13
PREAI
errUren, MJ; Nayar, V; Brunson, KM; Anthony, CJ; Stathis, JH; Cartier, E
err分享
err收藏
Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks
errAPPLIED PHYSICS LETTERS
IF3.6
err2015-07-07
err0
PREAI
errCarr, Adra; Rozen, John; Frank, Martin M.; Ando, Takashi; Cartier, Eduard A.; Kerber, Pranita; Narayanan, Vijay; Haight, Richard
err分享
err收藏
Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode (vol 8, pg 748, 2013)
errNATURE NANOTECHNOLOGY
IF34.9
err2013-11-07
err6
errOAAI
errDubourdieu, Catherine; Bruley, John; Arruda, Thomas M.; Posadas, Agham; Jordan-Sweet, Jean; Frank, Martin M.; Cartier, Eduard; Frank, David J.; Kalinin, Sergei V.; Demkov, Alexander A.; Narayanan, Vijay
err分享
err收藏
Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode
errNATURE NANOTECHNOLOGY
IF34.9
err2013-09-29
err234
PREAI
errDubourdieu, Catherine; Bruley, John; Arruda, Thomas M.; Posadas, Agham; Jordan-Sweet, Jean; Frank, Martin M.; Cartier, Eduard; Frank, David J.; Kalinin, Sergei V.; Demkov, Alexander A.; Narayanan, Vijay
err分享
err收藏
On the electrical characterization of high-κ dielectrics
errMRS BULLETIN
IF4.9
err2011-01-31
err17
PREAI
errDegraeve, R; Cartier, E; Kauerauf, T; Carter, R; Pantisano, L; Kerber, A; Groeseneken, G
err分享
err收藏
Charge trapping at the low-k dielectric-silicon interface probed by the conductance and capacitance techniques
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-09-22
err50
errOAAI
errAtkin, J. M.; Cartier, E.; Shaw, T. M.; Laibowitz, R. B.; Heinz, T. F.
err分享
err收藏
Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-06-13
err15
errOAAI
errPezzi, R. P.; Copel, M.; Gordon, M.; Cartier, E.; Baumvol, I. J. R.
err分享
err收藏
Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-08-08
err53
PREAI
errLim, D; Haight, R; Copel, M; Cartier, E
err分享
err收藏
Potential imaging of Si/HfO2/polycrystalline silicon gate stacks:: Evidence for an oxide dipole -: art. no. 122901
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-03-17
err6
PREAI
errLudeke, R; Narayanan, V; Gusev, EP; Cartier, E; Chey, SJ
err分享
err收藏
Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-07-21
err110
PREAI
errCarter, RJ; Cartier, E; Kerber, A; Pantisano, L; Schram, T; De Gendt, S; Heyns, M
err分享
err收藏
Characterization of silicate/Si(001) interfaces
errAPPLIED PHYSICS LETTERS
IF3.6
err2002-11-25
err45
PREAI
errCopel, M; Cartier, E; Narayanan, V; Reuter, MC; Guha, S; Bojarczuk, N
err分享
err收藏
Measurement of barrier heights in high permittivity gate dielectric films
errAPPLIED PHYSICS LETTERS
IF3.6
err2002-04-15
err26
PREAI
errZafar, S; Cartier, E; Gusev, EP
err分享
err收藏
Robustness of ultrathin aluminum oxide dielectrics on Si(001) (vol 78, pg 2670, 2001)
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-06-25
err0
PREAI
errCopel, M; Cartier, E; Gusev, EP; Guha, S; Bojarczuk, N; Poppeller, M
err分享
err收藏
Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal-oxide-semiconductor field-effect transistors:: Effective electron mobility
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-06-25
err79
PREAI
errRagnarsson, LÅ; Guha, S; Copel, M; Cartier, E; Bojarczuk, NA; Karasinski, J
err分享
err收藏
Imaging of trapped charge in SiO2 and at the SiO2-Si interface
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-06-18
err38
PREAI
errLudeke, R; Cartier, E
err分享
err收藏
Interface studies of tungsten gate metal-oxide-silicon capacitors
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-05-14
err18
PREAI
errShang, HL; White, MH; Guarini, KW; Solomon, P; Cartier, E; McFeely, FR; Yurkas, JJ; Lee, WC
err分享
err收藏
Robustness of ultrathin aluminum oxide dielectrics on Si(001)
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-04-30
err128
PREAI
errCopel, M; Cartier, E; Gusev, EP; Guha, S; Bojarczuk, N; Poppeller, M
err分享
err收藏
Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-03-12
err209
PREAI
errCopel, M; Cartier, E; Ross, FM
err分享
err收藏

研究方向

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合作学者
合作期刊
T
Tony F. Heinz
H 指数: 121 · 论文数: 733
S
Sergei V. Kalinin
H 指数: 109 · 论文数: 1.6K
G
G. Groeseneken
H 指数: 78 · 论文数: 1.3K
M
Marc Heyns
H 指数: 62 · 论文数: 1.0K
R
R. P. Pezzi
H 指数: 59 · 论文数: 436
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