W. J. Schaff - Publications, H-index & Citations

W. J. Schaff

Cornell University

61H指数

453论文数

2.0W被引数

收录论文 107

发表时间

High performance and high yield sub-240 nm AlN:GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates

APPLIED PHYSICS LETTERS

IF3.6

2023-08-01

PREAI

Nicholls, Jordan; Anderson, Liam; Lee, William; Ahn, Jason Jae Seok; Baskaran, Ashokraj; Bang, Hyunsik; Belloeil, Matthias; Cai, Yushan; Campbell, Jyoti; Chai, Jessica; Corpuz, Nathaniel; Entoma, Volter; Hayden, Brian; Hung, Tab; Kim, Henry; King, Douglas; Li, Shawn; Liu, Andy; McMahon, Daniel; Nguyen, Viet; Pan, Swee Fong; Tedman-Jones, Samuel; Toe, Wen Jun; Tsai, Ray; Tudo, Man Phat; Wang, Hai Ping; Wang, Youzhi; Yan, Shu; Yang, Ryan; Yeo, Kevin; Schaff, William; Krause, Norbert; Charters, Robbie; Tang, Johnny; Atanackovic, Petar

Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN

PHYSICAL REVIEW B

IF3.7

2014-11-14

OAAI

Xie, M. -Y.; Schubert, M.; Lu, J.; Persson, P. O. A.; Stanishev, V.; Hsiao, C. L.; Chen, L. C.; Schaff, W. J.; Darakchieva, V.

Ferromagnetism and spin polarization in indium nitride, indium oxynitride, and Cr substituted indium oxynitride films

APPLIED SURFACE SCIENCE

IF6.9

2014-03-01

PREAI

Thapa, P.; Lawes, G.; Nadgorny, B.; Naik, R.; Sudakar, C.; Schaff, W. J.; Dixit, A.

Growth and characterization of rugged sodium potassium antimonide photocathodes for high brilliance photoinjector

APPLIED PHYSICS LETTERS

IF3.6

2013-09-05

PREAI

Cultrera, L.; Karkare, S.; Lillard, B.; Bartnik, A.; Bazarov, I.; Dunham, B.; Schaff, W.; Smolenski, K.

Suppression of thermal conductivity in InxGa1-xN alloys by nanometer-scale disorder

APPLIED PHYSICS LETTERS

IF3.6

2013-03-27

PREAI

Tong, T.; Fu, D.; Levander, A. X.; Schaff, W. J.; Pantha, B. N.; Lu, N.; Liu, B.; Ferguson, I.; Zhang, R.; Lin, J. Y.; Jiang, H. X.; Wu, J.; Cahill, David G.

The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys

NANOSCALE RESEARCH LETTERS

IF4.1

2012-08-31

OAAI

Donmez, Omer; Gunes, Mustafa; Erol, Ayse; Arikan, Cetin M.; Balkan, Naci; Schaff, William J.

Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN

PHYSICAL REVIEW B

IF3.7

2011-08-09

OAAI

Miller, Nate; Haller, Eugene E.; Koblmueller, Gregor; Gallinat, Chad; Speck, James S.; Schaff, William J.; Hawkridge, Michael E.; Yu, Kin Man; Ager, Joel W., III

Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

APPLIED PHYSICS LETTERS

IF3.6

2011-02-28

PREAI

Schoeche, S.; Shi, Junxia; Boosalis, A.; Kuehne, P.; Herzinger, C. M.; Woollam, J. A.; Schaff, W. J.; Eastman, L. F.; Schubert, M.; Hofmann, T.

Defect redistribution in postirradiation rapid-thermal-annealed InN

PHYSICAL REVIEW B

IF3.7

2010-10-05

OAAI

Reurings, Floris; Rauch, Christian; Tuomisto, Filip; Jones, Rebecca E.; Yu, Kin M.; Walukiewicz, Wladek; Schaff, William J.

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

PROCEEDINGS OF THE IEEE

IF25.9

2010-07-01

PREAI

Hofstetter, Daniel; Baumann, Esther; Giorgetta, Fabrizio Raphael; Theron, Ricardo; Wu, Hong; Schaff, William J.; Dawlaty, Jahan; George, Paul A.; Eastman, Lester F.; Rana, Farhan; Kandaswamy, Prem K.; Guillot, Fabien; Monroy, Eva

Investigation of E1(LO) phonon-plasmon coupled modes and critical points in In1-xGaxN thin films by optical reflectance measurements

APPLIED PHYSICS LETTERS

IF3.6

2010-05-06

PREAI

Thakur, J. S.; Dixit, A.; Danylyuk, Y. V.; Sudakar, C.; Naik, V. M.; Schaff, W. J.; Naik, R.

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

APPLIED PHYSICS LETTERS

IF3.6

2010-02-23

OAAI

Darakchieva, V.; Lorenz, K.; Barradas, N. P.; Alves, E.; Monemar, B.; Schubert, M.; Franco, N.; Hsiao, C. L.; Chen, L. C.; Schaff, W. J.; Tu, L. W.; Yamaguchi, T.; Nanishi, Y.

Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

APPLIED PHYSICS LETTERS

IF3.6

2009-11-17

PREAI

Darakchieva, V.; Schubert, M.; Hofmann, T.; Monemar, B.; Hsiao, Ching-Lien; Liu, Ting-Wei; Chen, Li-Chyong; Schaff, W. J.; Takagi, Y.; Nanishi, Y.

Selective excitation of E1(LO) and A1(LO) phonons with large wave vectors in the Raman spectra of hexagonal InN

PHYSICAL REVIEW B

IF3.7

2009-08-27

PREAI

Davydov, V. Yu.; Klochikhin, A. A.; Smirnov, A. N.; Strashkova, I. Yu.; Krylov, A. S.; Lu, Hai; Schaff, William J.; Lee, H. -M.; Hong, Y. -L.; Gwo, S.

Superconductivity in heavily compensated Mg-doped InN

APPLIED PHYSICS LETTERS

IF3.6

2009-04-10

OAAI

Tiras, E.; Gunes, M.; Balkan, N.; Airey, R.; Schaff, W. J.

Properties of native point defects in In1-xAlxN alloys

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2009-04-06

PREAI

Jones, R. E.; Li, S. X.; Yu, K. M.; Ager, J. W., III; Haller, E. E.; Walukiewicz, W.; Lu, H.; Schaff, W. J.