D. Mathiot - Publications, H-index & Citations

D. Mathiot

universites de strasbourg etablissements associes

31H指数

188论文数

2.8K被引数

收录论文 8

发表时间

Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2019-03-11

OAAI

Demoulin, Remi; Roussel, Manuel; Duguay, Sebastien; Muller, Dominique; Mathiot, Daniel; Pareige, Philippe; Talbot, Etienne

Silicon and silicon-germanium nanoparticles obtained by Pulsed Laser Deposition

APPLIED SURFACE SCIENCE

IF6.9

2019-02-01

PREAI

Stock, F.; Diebold, L.; Antoni, F.; Gowda, C. Chowde; Muller, D.; Haffner, T.; Pfeiffer, P.; Roques, S.; Mathiot, D.

Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis

APPLIED PHYSICS LETTERS

IF3.6

2013-01-10

PREAI

Khelifi, Rim; Mathiot, Daniel; Gupta, Raghav; Muller, Dominique; Roussel, Manuel; Duguay, Sebastien

Simulation of the sub-melt laser anneal process in 45 CMOS technology-Application to the thermal pattern effects

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2008-12-01

PREAI

Colin, A.; Morin, P.; Cacho, F.; Bono, H.; Beneyton, R.; Bidaud, M.; Mathiot, D.; Fogarassy, E.

Diffusion of phosphorus implanted in germanium

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2008-12-01

PREAI

Canneaux, Th.; Mathiot, D.; Roques, S.; Schmitt, S.; Dubois, Ch.

Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

APPLIED SURFACE SCIENCE

IF6.9

2003-03-01

PREAI

Dutto, C; Fogarassy, E; Mathiot, D; Muller, D; Kern, P; Ballutaud, D

Numerical and experimental analysis of pulsed excimer laser processing of silicon carbide

APPLIED SURFACE SCIENCE

IF6.9

2001-12-01

PREAI

Dutto, C; Fogarassy, E; Mathiot, D

The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon

APPLIED PHYSICS LETTERS

IF3.6

1997-07-21

PREAI

Bonafos, C; Claverie, A; Alquier, D; Bergaud, C; Martinez, A; Laanab, L; Mathiot, D

研究方向