Masao Ikeda - Publications, H-index & Citations

Masao Ikeda

Jiangsu Institute of Advanced Semiconductors

63H指数

823论文数

1.7W被引数

收录论文 104

发表时间

Linear Al-Composition Dependence of Strain-Free Bandgap in AlxGa1-xN (0 ≤ x < 0.2) via Optical Spectroscopy and Theoretical Calculation 线性Al组分依赖的无应变带隙在AlxGa1-xN (0 ≤ x < 0.2)中的光学光谱与理论计算

Vacuum

IF3.9

2025-09-03

PREAI

Shaosheng Fan; Masao Ikeda; Baoping Zhang; Siyi Huang; Yang Mei; Jianping Liu; Zongliang Liu; Ke Xu

Structure Design of InGaN-Based Blue Laser Diodes With ITO and Nanoporous GaN Cladding Layers

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2025-03-01

PREAI

Yang, Jinbin; Feng, Meixin; Sun, Xiujian; Zhang, Shuming; Ikeda, Masao; Sun, Qian; Yang, Hui

Two-step growth of crack-free 5 μm-thick Al0.2Ga0.8N on sapphire substrate with sputtered AlN nucleation layer 在蓝宝石衬底上通过溅射AlN成核层实现无裂纹5 μm厚Al0.2Ga0.8N的两步生长

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-02-12

OAAI

Li, Y. Q.; Tian, A. Q.; Liu, J. P.; Li, X.; Li, F. Z.; Zhou, W.; Ikeda, M.; Yang, H.

Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering

APPLIED PHYSICS LETTERS

IF3.6

2024-07-08

PREAI

Dai, Yayu; Liu, Jianxun; Sun, Xiujian; Zhan, Xiaoning; Luo, Yujiao; Zhang, Shuming; Sun, Qian; Wang, Liangji; Ji, Yun; Ikeda, Masao; Yang, Hui

480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region

OPTICS EXPRESS

IF3.3

2024-05-09

OAAI

Dai, Yayu; Liu, Jianxun; Sun, Xiujian; Lv, Xiaocui; Feng, Meixin; Zhang, Shuming; Sun, Qian; Wang, Liangji; Ji, Yun; Ikeda, Masao; Yang, Hui

Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN

NANOMATERIALS

IF4.3

2024-04-25

OAAI

Wu, Peng; Liu, Jianping; Li, Fangzhi; Ren, Xiaoyu; Tian, Aiqin; Zhou, Wei; Zhang, Fan; Li, Xuan; Zhou, Bolin; Ikeda, Masao; Yang, Hui

GaN-based distributed feedback laser diodes grown on Si

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-02-11

PREAI

Tang, Yongjun; Feng, Meixin; Liu, Jianxun; Sun, Xiujian; Yan, Shumeng; Fan, Shizhao; Sun, Qian; Zhang, Shuming; Ikeda, Masao; Yang, Hui

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate 图案化c面GaN衬底条纹上GaN的生长行为

NANOMATERIALS

IF4.3

2022-01-29

OAAI

Wu, Peng; Liu, Jianping; Jiang, Lingrong; Hu, Lei; Ren, Xiaoyu; Tian, Aiqin; Zhou, Wei; Ikeda, Masao; Yang, Hui

Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings 带缝隙光栅的窄线宽gan-on-si激光二极管

NANOMATERIALS

IF4.3

2021-11-16

OAAI

Tang, Yongjun; Feng, Meixin; Liu, Jianxun; Fan, Shizhao; Sun, Xiujian; Sun, Qian; Zhang, Shuming; Liu, Tong; Kong, Yaping; Huang, Zengli; Ikeda, Masao; Yang, Hui

Greatly suppressed potential inhomogeneity and performance improvement of c-plane InGaN green laser diodes

SCIENCE CHINA-MATERIALS

IF7.4

2021-11-12

OAAI

Tian, Aiqin; Hu, Lei; Li, Xuan; Wu, Si; Xu, Peng; Wang, Dan; Zhou, Renlin; Guo, Binglei; Li, Fangzhi; Zhou, Wei; Li, Deyao; Ikeda, Masao; Yang, Hui; Liu, Jianping

Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes

FUNDAMENTAL RESEARCH

IF6.3

2021-11-01

OAAI

Jiang, Lingrong; Liu, Jianping; Tian, Aiqin; Ikeda, Masao; Zhang, Liqun; Wu, Peng; Zhou, Wei; Yang, Hui

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

MATERIALS

IF3.2

2021-04-09

OAAI

Li, Xuan; Liu, Jianping; Su, Xujun; Huang, Siyi; Tian, Aiqin; Zhou, Wei; Jiang, Lingrong; Ikeda, Masao; Yang, Hui

Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer

optics letters

IF2.8

2021-01-01

PREAI

Jiang, Lingrong; Liu, Jianping; Hu, Lei; Zhang, Liqun; Tian, Aiqin; Xiong, Wei; Ren, Xiaoyu; Huang, Siyi; Zhou, Wei; Ikeda, Masao; Yang, Hui

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping

OPTICS EXPRESS

IF3.3

2020-10-08

OAAI

Liu, Jianxun; Qie, Haoran; Sun, Qian; Feng, Meixin; Wang, Jin; Sun, Xiujian; Sheng, Xing; Ikeda, Masao; Yang, Hui

InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100)

ACS PHOTONICS

IF6.7

2020-09-23

PREAI

Zhou, Rui; Feng, Meixin; Wang, Jin; Sun, Qian; Liu, Jianxun; Zhang, Shuming; Ikeda, Masao; Liu, Tong; Huang, Zengli; Sheng, Xing; Yang, Hui

Degradation study of InGaN-based laser diodes grown on Si

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-07-13

PREAI

Tang, Yongjun; Feng, Meixin; Wen, Pengyan; Liu, Jianxun; Wang, Jin; Sun, Xiujian; Sun, Qian; Zhang, Shuming; Sheng, Xing; Ikeda, Masao; Yang, Hui

Suppression of substrate mode in GaN-based green laser diodes

OPTICS EXPRESS

IF3.3

2020-05-07

OAAI

Jiang, Lingrong; Liu, Jianping; Zhang, Liqun; Qiu, Bocang; Tian, Aiqin; Hu, Lei; Li, Deyao; Huang, Siyi; Zhou, Wei; Ikeda, Masao; Yang, Hui

Continuous-wave electrically injected GaN-on-Si microdisk laser diodes

OPTICS EXPRESS

IF3.3

2020-04-08

OAAI

Wang, Jin; Feng, Meixin; Zhou, Rui; Sun, Qian; Liu, Jianxun; Sun, Xiujian; Zheng, Xinhe; Ikeda, Masao; Sheng, Xing; Yang, Hui

Wafer-scale crack-free 10 μm-thick GaN with a dislocation density of 5.8 x 107 cm-2 grown on Si

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-08-02

PREAI

Liu, Jianxun; Huang, Yingnan; Sun, Xiujian; Zhan, Xiaoning; Sun, Qian; Gao, Hongwei; Feng, Meixin; Zhou, Yu; Ikeda, Masao; Yang, Hui

GaN-based ultraviolet microdisk laser diode grown on Si

PHOTONICS RESEARCH

IF7.2

2019-05-22

PREAI

Wang, Jin; Feng, Meixin; Zhou, Rui; Sun, Qian; Liu, Jianxun; Huang, Yingnan; Zhou, Yu; Gao, Hongwei; Zheng, Xinhe; Ikeda, Masao; Yang, Hui

研究方向