H. J. von Bardeleben - Publications, H-index & Citations

H. J. von Bardeleben

institut des nanoscience de paris 4

44H指数

333论文数

7.1K被引数

收录论文 66

发表时间

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si-Doped k-Ga₂O₃ Close to the Metal-to-Insulator Transition 掺杂、无序和补偿对接近金属-绝缘体转变的Si掺杂k-Ga₂O₃中电子传导的影响

Advanced Electronic Materials

IF5.3

2026-09-13

OAAI

Antonella Parisini; Hans Jürgen von Bardeleben; Ildicò Cora; Zsolt Fogarassy; Paola Alippi; Vincenzo Fiorentini; Ian Vickridge; Piero Mazzolini; Alessio Bosio; Roberto Fornari

High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa-Sn complexes (vol 137, 055703, 2025)高温退火诱导的UID和Sn掺杂β-Ga2O3块体样品中的电补偿：VGa-Sn复合物的角色（卷137，055703，2025）

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-02-24

PREAI

von Bardeleben, H. J.; Zhou, Xuanze; Zhou, Jingbo; Xu, Guangwei; Long, Shibing; Gerstmann, U.

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)

MOLECULES

IF4.6

2024-06-26

OAAI

Latypova, Larisa; Murzakhanov, Fadis; Mamin, George; Sadovnikova, Margarita; von Bardeleben, Hans Jurgen; Rau, Julietta V.; Gafurov, Marat

Room temperature coherence properties and 14N nuclear spin readout of NV centers in 4H-SiC

APPLIED PHYSICS LETTERS

IF3.6

2024-01-18

PREAI

Murzakhanov, Fadis; Sadovnikova, Margarita; Mamin, George; Sannikov, Kirill; Shakirov, Aynur; von Bardeleben, Hans Jurgen; Mokhov, Evgeniy; Nagalyuk, Sergey

Aluminum intercalation behaviours of {[Fe(Tp)(CN)3]2[M(H2O)2]} cyanido-bridged chain compounds in an ionic liquid electrolyte 离子液体电解质中 {[Fe(Tp)(CN)3]2[M(H2O)2]} 氰基桥联链化合物的铝嵌入行为

DALTON TRANSACTIONS

IF3.3

2024-01-01

PREAI

Li, Na; Li, Yanling; von Bardeleben, Hans Jurgen; Dambournet, Damien; Lescouezec, Rodrigue

Enlightening the Alkali Ion Role in the Photomagnetic Effect of FeCo Prussian Blue Analogues

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

IF15.6

2022-06-08

OAAI

Glatz, Jana; Jimenez, Juan-Ramon; Godeffroy, Louis; von Bardeleben, Hans Jurgen; Fillaud, Laure; Maisonhaute, Emmanuel; Li, Yanling; Chamoreau, Lise-Marie; Lescouezec, Rodrigue

Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-02-01

PREAI

Parisini, Antonella; Bosio, Alessio; von Bardeleben, Hans Jurgen; Jimenez, Juan; Dadgostar, Shabnam; Pavesi, Maura; Baraldi, Andrea; Vantaggio, Salvatore; Fornari, Roberto

Photo-Activated Phosphorescence of Ultrafine ZnS:Mn Quantum Dots: On the Lattice Strain Contribution

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2021-12-30

OAAI

Longo, Antonio Valerio; Notebaert, Baptiste; Gaceur, Meriem; Patriarche, Gilles; Sciortino, Alice; Cannas, Marco; Messina, Fabrizio; von Bardeleben, Hans Jurgen; Battaglini, Nicolas; Ammar, Souad

Spin Polarization, Electron-Phonon Coupling, and Zero-Phonon Line of the NV Center in 3C-SiC 3C-SiC中NV中心的自旋极化，电子-声子耦合和零声子线

NANO LETTERS

IF9.1

2021-09-28

OAAI

von Bardeleben, Hans Jurgen; Cantin, Jean-Louis; Gerstmann, Uwe; Schmidt, Wolf Gero; Biktagirov, Timur

Hyperfine and nuclear quadrupole splitting of the NV- ground state in 4H-SiC

PHYSICAL REVIEW B

IF3.7

2021-06-21

PREAI

Murzakhanov, F. F.; Yavkin, B., V; Mamin, G., V; Orlinskii, S. B.; von Bardeleben, H. J.; Biktagirov, T.; Gerstmann, U.; Soltamov, V. A.

Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide 共振激发的相干操纵和4h碳化硅中氮空位中心的单发射极产生

NANO LETTERS

IF9.1

2020-07-09

OAAI

Mu, Zhao; Zargaleh, Soroush Abbasi; von Bardeleben, Hans Jurgen; Froch, Johannes E.; Nonahal, Milad; Cai, Hongbing; Yang, Xinge; Yang, Jianqun; Li, Xingji; Aharonovich, Igor; Gao, Weibo

Carbon vacancy-related centers in 3C-silicon carbide: Negative-U properties and structural transformation

PHYSICAL REVIEW B

IF3.7

2020-05-11

PREAI

von Bardeleben, H. J.; Rauls, E.; Gerstmann, U.

High-resolution resonant excitation of NV centers in 6H-SiC: A matrix for quantum technology applications

PHYSICAL REVIEW B

IF3.7

2019-11-11

OAAI

Khazen, Kh; von Bardeleben, H. J.; Zargaleh, S. A.; Cantin, J. L.; Zhao, Mu; Gao, Weibo; Biktagirov, T.; Gerstmann, U.

Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films

MATERIALS TODAY PHYSICS

IF9.7

2019-03-01

OAAI

Chikoidze, E.; Rogers, D. J.; Teherani, F. H.; Rubio, C.; Sauthier, G.; Von Bardeleben, H. J.; Tchelidze, T.; Ton-That, C.; Fellous, A.; Bove, P.; Sandana, E. V.; Dumont, Y.; Perez-Tomas, A.

Proton irradiation induced defects in β-Ga2O3: A combined EPR and theory study

APL MATERIALS

IF4.5

2019-01-22

OAAI

von Bardeleben, Hans Juergen; Zhou, Shengqiang; Gerstmann, Uwe; Skachkov, Dmitry; Lambrecht, Walter R. L.; Quoc Duy Ho; Deak, Peter

Structure and electrochromism of two-dimensional octahedral molecular sieve h′-WO3 二维八面体分子筛h ′-WO3的结构和电致变色

NATURE COMMUNICATIONS

IF15.7

2019-01-18

105

OAAI

Besnardiere, Julie; Ma, Binghua; Torres-Pardo, Almudena; Wallez, Gilles; Kabbour, Houria; Gonzalez-Calbet, Jose M.; Von Bardeleben, Hans Jurgen; Fleury, Benoit; Buissette, Valerie; Sanchez, Clement; Le Mercier, Thierry; Cassaignon, Sophie; Portehault, David

Chemical nature of the anion antisite in dilute phosphide GaAs1-xPx alloy grown at low temperature

PHYSICAL REVIEW MATERIALS

IF3.4

2018-10-16

OAAI

Demonchaux, T.; Sossoe, K. K.; Dzagli, M. M.; Nys, J. P.; Berthe, M.; Troadec, D.; Addad, A.; Veillerot, M.; Patriarche, G.; von Bardeleben, H. J.; Schnedler, M.; Coinon, C.; Lefebvre, I.; Mohou, M. A.; Stievenard, D.; Lampin, J. F.; Ebert, Ph.; Wallart, X.; Grandidier, B.

Bright room temperature single photon source at telecom range in cubic silicon carbide

NATURE COMMUNICATIONS

IF15.7

2018-10-05

108

OAAI

Wang, Junfeng; Zhou, Yu; Wang, Ziyu; Rasmita, Abdullah; Yang, Jianqun; Li, Xingji; von Bardeleben, Hans Jurgen; Gao, Weibo

Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-03-14

OAAI

Yuan, Ye; Amarouche, Teyri; Xu, Chi; Rushforth, Andrew; Boettger, Roman; Edmonds, Kevin; Campion, Richard; Gallagher, Bryan; Helm, Manfred; von Bardeleben, Hans Jurgen; Zhou, Shengqiang

Characterization and formation of NV centers in 3C, 4H, and 6H SiC: An ab initio study

PHYSICAL REVIEW B

IF3.7

2017-08-16

OAAI

Csore, A.; von Bardeleben, H. J.; Cantin, J. L.; Gali, A.

研究方向