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Takashi Egawa

Nagoya Institute of Technology

48H指数
764论文数
1.1W被引数
收录论文 92
发表时间
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GaN-based n-p-n heterojunction bipolar transistors employing Mg-doped GaInN multiple-quantum well structure as p-type base region基于GaN的n-p-n异质结双极晶体管，采用Mg掺杂的GaInN多量子阱结构作为p型基区
errJAPANESE JOURNAL OF APPLIED PHYSICS
IF1.8
err2025-10-01
err0
PREAI
errMase, Akira; Inoue, Ryosei; Kojima, Tomoki; Egawa, Takashi; Miyoshi, Makoto
err分享
err收藏
Design and Simulation of III-Nitride-Based Polarization-Matched Resonant-Tunneling Diodes with Quaternary AlGaInN Quantum Wells and Ternary AlInN Double Barriers基于III-Nitride的极化匹配共振隧穿二极管的设计与仿真：采用四元AlGaInN量子阱和三元AlInN双势垒
errPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
IF2
err2025-09-01
err0
errOAAI
errImaizumi, Hikaru; Mase, Akira; Egawa, Takashi; Miyoshi, Makoto
err分享
err收藏
Improved performance of InGaN/GaN multiple-quantum-wells photovoltaic devices on free-standing GaN substrates with TMAH treatment
errSOLAR ENERGY MATERIALS AND SOLAR CELLS
IF6.3
err2024-09-01
err1
PREAI
errHu, Nan; Fujisawa, Takahiro; Kojima, Tomoki; Egawa, Takashi; Miyoshi, Makoto
err分享
err收藏
Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-05-01
err2
PREAI
errKawaide, Tomoyuki; Kometani, Yoshinobu; Tanaka, Sakura; Egawa, Takashi; Miyoshi, Makoto
err分享
err收藏
Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns
errJOURNAL OF MATERIALS SCIENCE
IF3.9
err2024-02-19
err0
PREAI
errIshikawa, Yukari; Sugawara, Yoshihiro; Yao, Yongzhao; Miyoshi, Makoto; Egawa, Takashi
err分享
err收藏
Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film
errVACUUM
IF3.9
err2023-07-01
err3
PREAI
errDalapati, Pradip; Egawa, Takashi; Miyoshi, Makoto
err分享
err收藏
Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects
errSENSORS AND ACTUATORS A-PHYSICAL
IF4.9
err2022-11-01
err6
errOAAI
errDalapati, Pradip; Almalki, Abdulaziz; Alhassan, Sultan; Alotaibi, Saud; Al Huwayz, Maryam; Nakabayashi, Taiki; Egawa, Takashi; Miyoshi, Makoto; Henini, Mohamed
err分享
err收藏
The role of p-GaN layer thickness for the evaluation of high-performance and ultrafast GaInN/GaN multiple quantum wells UV photodetectors
errOPTICAL MATERIALS
IF4.2
err2022-05-01
err6
PREAI
errDalapati, Pradip; Nakabayashi, Taiki; Yamamoto, Kosuke; Egawa, Takashi; Miyoshi, Makoto
err分享
err收藏
GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)GaN/InGaN双量子阱 (DQW) 栅结构用于gan-on-si常闭型AlGaN/GaN高电子迁移率晶体管 (hemt)
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2021-11-01
err7
PREAI
errBiswas, Debaleen; Tsuboi, Takuya; Egawa, Takashi
err分享
err收藏
Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature
errSENSORS AND ACTUATORS A-PHYSICAL
IF4.9
err2021-11-01
err17
PREAI
errDalapati, Pradip; Yamamoto, Kosuke; Egawa, Takashi; Miyoshi, Makoto
err分享
err收藏
Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n plus plus -GaN contact layer
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2021-10-01
err5
PREAI
errMiyoshi, Makoto; Inoue, Akiyoshi; Yamanaka, Mizuki; Harada, Hiroki; Egawa, Takashi
err分享
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Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-08-31
err6
PREAI
errLi, L. Y.; Shima, K.; Yamanaka, M.; Kojima, K.; Egawa, T.; Uedono, A.; Ishibashi, S.; Takeuchi, T.; Miyoshi, M.; Chichibu, S. F.
err分享
err收藏
Understanding the degradation mechanisms of InGaN/GaN multiple quantum well UV photodetectors submitted to different current stresses
errOPTICS LETTERS
IF3.3
err2021-07-21
err5
PREAI
errDalapati, Pradip; Yamamoto, Kosuke; Egawa, Takashi; Miyoshi, Makoto
err分享
err收藏
Demonstration of polarization-induced hole conduction in composition-graded AlInN layers grown by metalorganic chemical vapor deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-04-19
err1
PREAI
errMiyoshi, Makoto; Nakabayashi, Taiki; Takada, Haruka; Egawa, Takashi; Takeuchi, Tetsuya
err分享
err收藏
Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-01-11
err17
PREAI
errDalapati, Pradip; Yamamoto, Kosuke; Egawa, Takashi; Miyoshi, Makoto
err分享
err收藏
Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2020-11-01
err18
PREAI
errDalapati, P.; Urata, S.; Egawa, T.
err分享
err收藏
Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template
errOPTICAL MATERIALS
IF4.2
err2020-11-01
err25
PREAI
errDalapati, Pradip; Yamamoto, Kosuke; Egawa, Takashi; Miyoshi, Makoto
err分享
err收藏
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures
errNANOSCALE RESEARCH LETTERS
IF4.1
err2018-10-23
err8
errOAAI
errTan, Shuxin; Zhang, Jicai; Egawa, Takashi; Chen, Gang; Luo, Xiangdong; Sun, Ling; Zhu, Youhua
err分享
err收藏
The 2018 GaN power electronics roadmap2018 GaN电力电子路线图
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2018-03-26
err1.0K
errOAAI
errAmano, H.; Baines, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R.; Charles, M.; Chen, Kevin J.; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria Merlyne; Decoutere, Stefaan; Di Cioccio, L.; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Haeberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xu; Marcon, Denis; Maerz, Martin; McCarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E. M. S.; Oliver, Stephen; Palacios, Tomas; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hove, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao
err分享
err收藏
Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/AlGaN heterointerface
errAPPLIED PHYSICS LETTERS
IF3.6
err2018-03-08
err2
PREAI
errLi, Lei; Hosomi, Daiki; Miyachi, Yuta; Miyoshi, Makoto; Egawa, Takashi
err分享
err收藏

研究方向

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合作期刊
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