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K

K. Jena

Department of Electronics and Communication Engineering

14H指数
59论文数
478被引数
收录论文 6
发表时间
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Impact of High-κ and Novel Gate Oxides on FinFET Performance: A Multi-Parameter Modeling Approach高-κ和新型栅介质对鳍式场效应晶体管性能的影响：一种多参数建模方法
errSilicon
IF3.3
err2026-07-17
err0
PREAI
errVivek Rai; Ravi Ranjan Kumar; Kanjalochan Jena; Deepak Punetha
err分享
err收藏
Field-plate engineered nano-AlN/β-Ga2O3 MOSHEMTs for high frequency and high efficiency power applications场板工程纳米-AlN/β-Ga2O3 MOSHEMTs用于高频和高效率功率应用
errPHYSICA SCRIPTA
IF2.6
err2025-04-10
err0
PREAI
errChauhan, Meenakshi; Jena, K.; Tomar, Raghuvir; Khan, Abdul Naim; Lenka, T. R.
err分享
err收藏
Advancing Electrical and Analog/RF Performance in Dual-Gate AlGaN/GaN MOSHEMT for High-Power and High-Frequency Applications提升双栅极AlGaN/GaN MOSHEMT的电学及模拟/射频性能，以用于高功率和高频应用
errinternational journal of engineering science
IF2.9
err2025-01-07
err0
PREAI
errKhan, Abdul Naim; Jena, K.; Chatterjee, Gaurav; Chauhan, Meenakshi; Lenka, Trupti Ranjan
err分享
err收藏
Conventional to Modern Methods of Soil NPK Sensing: A Review
errIEEE SENSORS JOURNAL
IF4.5
err2024-02-01
err7
PREAI
errDattatreya, Sneha; Khan, Abdul Naim; Jena, Kanjalochan; Chatterjee, Gaurav
err分享
err收藏
Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2016-10-01
err12
PREAI
errSwain, R.; Jena, K.; Lenka, T. R.
err分享
err收藏
Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2015-08-01
err16
PREAI
errSwain, Raghunandan; Jena, Kanjalochan; Lenka, T. R.
err分享
err收藏

研究方向

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合作学者
合作期刊
T
Trupti Ranjan Lenka
H 指数: 26 · 论文数: 266
R
Raghuvir Singh Tomar
H 指数: 25 · 论文数: 168
D
Deepak Punetha
H 指数: 22 · 论文数: 91
R
Raghunandan Swain
H 指数: 15 · 论文数: 74
G
Gaurav Chatterjee
H 指数: 9 · 论文数: 30
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