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E. N. Mokhov

russian academy of sciences

31H指数
278论文数
3.4K被引数
收录论文 27
发表时间
Coherence of NV defects in isotopically enriched 6H-28SiC at ambient conditions
err2024-11-13
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PREAI
errMurzakhanov, Fadis; Mamin, Georgy; Sadovnikova, Margarita; Mokhov, Evgeniy; Nagalyuk, Sergey; Gafurov, Marat; Soltamov, Victor
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Room temperature coherence properties and 14N nuclear spin readout of NV centers in 4H-SiC
err2024-01-18
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PREAI
errMurzakhanov, Fadis; Sadovnikova, Margarita; Mamin, George; Sannikov, Kirill; Shakirov, Aynur; von Bardeleben, Hans Jurgen; Mokhov, Evgeniy; Nagalyuk, Sergey
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Symmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride
err2023-02-13
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errOAAI
errGracheva, Irina N.; Murzakhanov, Fadis F.; Mamin, Georgy V.; Sadovnikova, Margarita A.; Gabbasov, Bulat F.; Mokhov, Evgeniy N.; Gafurov, Marat R.
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Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface
err2022-03-03
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errOAAI
errBreev, I. D.; Shang, Z.; Poshakinskiy, A., V; Singh, H.; Berencen, Y.; Hollenbach, M.; Nagalyuk, S. S.; Mokhov, E. N.; Babunts, R. A.; Baranov, P. G.; Suter, D.; Tarasenko, S. A.; Astakhov, G., V; Anisimov, A. N.
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Relaxation processes and high-field coherent spin manipulation in color center ensembles in 6H-SiC
err2021-05-13
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PREAI
errSoltamov, Victor A.; Yavkin, Boris, V; Anisimov, Andrey N.; Singh, Harpreet; Bundakova, Anna P.; Mamin, Georgy, V; Orlinskii, Sergei B.; Mokhov, Evgeniy N.; Suter, Dieter; Baranov, Pavel G.
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Stress-controlled zero-field spin splitting in silicon carbide
err2021-02-26
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errOAAI
errBreev, I. D.; Poshakinskiy, A., V; Yakovleva, V. V.; Nagalyuk, S. S.; Mokhov, E. N.; Huebner, R.; Astakhov, G., V; Baranov, P. G.; Anisimov, A. N.
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Properties of AlN single crystals doped with Beryllium via high temperature diffusion
err2018-08-22
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PREAI
errSoltamov, V. A.; Rabchinskii, M. K.; Yavkin, B. V.; Kazarova, O. P.; Nagalyuk, S. S.; Davydov, V. Yu.; Smirnov, A. N.; Lebedev, V. F.; Mokhov, E. N.; Orlinskii, S. B.; Baranov, P. G.
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Microstructure and strength of AlN-SiC interface studied by synchrotron X-rays
err2017-01-02
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PREAI
errArgunova, T. S.; Gutkin, M. Yu.; Shcherbachev, K. D.; Je, J. H.; Lim, J. -H.; Kazarova, O. P.; Mokhov, E. N.
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Nonstationary holographic currents in neutron-irradiated SiC crystal
err2014-09-11
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PREAI
errBryushinin, M. A.; Kulikov, V. V.; Mokhov, E. N.; Mokrushina, E. V.; Petrov, A. A.; Sokolov, I. A.
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Silicon carbide light-emitting diode as a prospective room temperature source for single photons
err2013-04-10
err112
errOAAI
errFuchs, F.; Soltamov, V. A.; Vaeth, S.; Baranov, P. G.; Mokhov, E. N.; Astakhov, G. V.; Dyakonov, V.
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Non-steady-state photoelectromotive force in an AlN crystal
err2012-08-30
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errOAAI
errBryushinin, M.; Kulikov, V.; Mokhov, E.; Nagalyuk, S.; Sokolov, I.
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Role of micropipes in the formation of pores at foreign polytype boundaries in SiC crystals
err2007-08-23
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errOAAI
errGutkin, M. Yu.; Sheinerman, A. G.; Argunova, T. S.; Yi, J. M.; Je, J. H.; Nagalyuk, S. S.; Mokhov, E. N.; Margaritondo, G.; Hwu, Y.
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Optical phohon decay in bulk aluminum nitride
err2006-07-10
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PREAI
errSong, D. Y.; Holtz, M.; Chandolu, A.; Nikishin, S. A.; Mokhov, E. N.; Makarov, Yu.; Helava, H.
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Short-period superlattices of AlN/Al0.08Ga0.92N grown on AlN substrates
err2004-11-08
err26
errOAAI
errNikishin, SA; Borisov, BA; Chandolu, A; Kuryatkov, VV; Temkin, H; Holtz, M; Mokhov, EN; Makarov, Y; Helava, H
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Micropipe evolution in silicon carbide
err2003-09-15
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errOAAI
errGutkin, MY; Sheinerman, AG; Argunova, TS; Mokhov, EN; Je, JH; Hwu, YK; Tsai, WL; Margaritondo, G
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EPR study of shallow and deep phosphorous centers in 6H-SiC (vol B 66, art no 165206, 2002)
err2002-11-01
err0
errOAAI
errBaranov, PG; Ilyin, IV; Mokhov, EN; von Bardeleben, HJ; Cantin, JL
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Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC -: art. no. 155214
err2002-10-31
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PREAI
errWagner, M; Thinh, NQ; Son, NT; Chen, WM; Janzén, E; Baranov, PG; Mokhov, EN; Hallin, C; Lindström, JL
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EPR study of shallow and deep phosphorous centers in 6H-SiC -: art. no. 165206
err2002-10-07
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PREAI
errBaranov, PG; Ilyin, IV; Mokhov, EN; von Bardeleben, HJ; Cantin, JL
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Electronic structure of the N donor center in 4H-SiC and 6H-SiC
err2001-08-08
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PREAI
errvon Duijn-Arnold, A; Zondervan, R; Schmidt, J; Baranov, PG; Mokhov, EN
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